Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15706598Application Date: 2017-09-15
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Publication No.: US10192928B2Publication Date: 2019-01-29
- Inventor: Natsuki Fukuda , Mutsumi Okajima , Atsushi Oga , Toshiharu Tanaka , Takeshi Yamaguchi , Takeshi Takagi , Masanori Komura
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L27/10 ; H01L21/822 ; H01L27/115 ; H01L29/792 ; H01L21/3213 ; H01L21/768 ; H01L21/311 ; H01L27/06 ; H01L23/532 ; H01L23/522 ; H01L27/11575 ; H01L27/11573 ; H01L27/11578 ; H01L27/11556 ; H01L27/11582 ; H01L27/11551 ; H01L27/1157

Abstract:
A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film; a first conductive body contacting the stacked body to extend in a stacking direction; and a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films, the first conductive body including a projecting part that projects along tops of one of the first insulating films and one of the first conductive films, and a side surface of the projecting part contacting an upper surface of the one of the first conductive films.
Public/Granted literature
- US20180006089A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-01-04
Information query
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