摘要:
According to an exemplary embodiment, a substrate having a first area and a second area is provided. The substrate includes a plurality of pads. Each of the pads has a pad size. The pad size in the first area is larger than the pad size in the second area.
摘要:
A semiconductor die including mechanical-stress-resistant bump structures is provided. The semiconductor die includes dielectric material layers embedding metal interconnect structures, a connection pad-and-via structure, and a bump structure including a bump via portion and a bonding bump portion. The entirety of a bottom surface of the bump via portion is located within an area of a horizontal top surface of a pad portion of the connection pad-and-via structure.
摘要:
According to an exemplary embodiment, a semiconductor package is provided. The A semiconductor package includes at least one chip, and at least one component adjacent to the at least one chip, wherein the at least one chip and the at least one component are molded in a same molding body.
摘要:
A semiconductor package includes an interposer module on a package substrate, a thermal interface material (TIM) layer on the interposer module, a TIM layer protection structure on a side surface of the TIM layer and a side surface of the interposer module, and a package lid on the interposer module, the TIM layer and the TIM layer protection structure. A method of forming the semiconductor package may include mounting an interposer module on a package substrate, locating a thermal interface material (TIM) layer on the interposer module, locating a package lid on the interposer module and the TIM layer, and forming a TIM layer protection structure on a side surface of the TIM layer and a side surface of the interposer module, through a filling hole in the package lid.
摘要:
A semiconductor package includes a package substrate including an upper surface layer including a first surface area having a first surface roughness, and a second surface area having a second surface roughness less than the first surface roughness, and an interposer module mounted on the upper surface layer of the package substrate in the second surface area. The semiconductor package may also include an interposer including an upper surface layer including a first surface area having a first surface roughness, and a second surface area having a second surface roughness less than the first surface roughness. The semiconductor package may also include an printed circuit board substrate including an upper surface layer including a first surface area having a first surface roughness, and a second surface area having a second surface roughness less than the first surface roughness.
摘要:
A disclosed system is configured to bond a chip to a substrate and includes a chip processing subsystem that is configured to receive the chip and to expose the chip to a first plasma, and a substrate processing subsystem that is configured to receive the substrate and to expose the substrate to a second plasma. The system further includes a bonding subsystem that is configured to align the chip with the substrate, to force the chip and the substrate into direct mechanical contact with one another by application of a compressive force, and to apply heat to at least one of the chip or the substrate. Application of the compressive force and the heat thereby bonds the chip to the substrate. The first and second plasmas may include H2/N2, H2/Ar, H2/He, NH3/N2, NH3/Ar, or NH3/He and the chip and substrate may be maintained in a low oxygen environment.
摘要:
A semiconductor die including mechanical-stress-resistant bump structures is provided. The semiconductor die includes dielectric material layers embedding metal interconnect structures, a connection pad-and-via structure, and a bump structure including a bump via portion and a bonding bump portion. The entirety of a bottom surface of the bump via portion is located within an area of a horizontal top surface of a pad portion of the connection pad-and-via structure.
摘要:
A package substrate and a method of fabrication thereof including a hybrid substrate core having different material properties in different portions of the core. A first portion of the hybrid substrate core may have a lower coefficient of thermal expansion (CTE) compared to a second portion of the hybrid substrate core. The CTE of the first portion of the hybrid substrate core may be close to the CTE of semiconductor integrated circuit dies mounted to a first side of the package substrate in an assembled semiconductor package. The CTE of the second portion of the hybrid substrate core may be close to the CTE of a supporting substrate, such as a printed circuit board, to which the semiconductor package is mounted. The package substrate may help to balance stress, such as thermally-induced stress, in the semiconductor package, thereby improving package reliability.
摘要:
A semiconductor package includes a package substrate a package substrate including: a substrate core; an upper redistribution layer disposed on a first side of the substrate core; and a lower redistribution layer disposed on an opposing second side of the substrate core; a semiconductor device vertically stacked on and electrically connected to the package substrate; and an upper reinforcement layer embedded in the upper redistribution layer between the semiconductor device and the substrate core, the upper reinforcement layer having a Young's modulus that is higher than a Young's modulus of the upper redistribution layer.
摘要:
According to an exemplary embodiment, a semiconductor package is provided. The semiconductor package includes at least one chip, and at least one component adjacent to the at least one chip, wherein the at least one chip and the at least one component are molded in a same molding body.