专利检索 ap:("Taiwan Semiconductor Manufacturing Company, Ltd.") AND inv:"Yi-Jou Lin" 第 1 页

1.

发明授权
Interconnect structure for package-on-package devices 有权

公开(公告)号：US10515875B2

公开(公告)日：2019-12-24

申请号：US16390138

申请日：2019-04-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jui-Pin Hung , Jing-Cheng Lin , Po-Hao Tsai , Yi-Jou Lin , Shuo-Mao Chen , Chiung-Han Yeh , Der-Chyang Yeh

IPC分类号： H01L23/12 , H01L21/00 , H01L23/48 , H01L23/00 , H01L23/528 , H01L25/065 , H01L23/538 , H01L23/28 , H01L23/498 , H01L21/56 , H01L25/10 , H01L21/768 , H01L21/82 , H01L25/18 , H01L25/00 , H01L21/48 , H01L23/31

摘要： An interconnect structure and a method of forming an interconnect structure are provided. The interconnect structure is formed over a carrier substrate, upon which a die may also be attached. Upon removal of the carrier substrate and singulation, a first package is formed. A second package may be attached to the first package, wherein the second package may be electrically coupled to through vias formed in the first package.

2.

发明申请
Interconnect Structure for Package-on-Package Devices and a Method of Fabricating 审中-公开

公开(公告)号：US20190252296A1

公开(公告)日：2019-08-15

申请号：US16390138

申请日：2019-04-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jui-Pin Hung , Jing-Cheng Lin , Po-Hao Tsai , Yi-Jou Lin , Shuo-Mao Chen , Chiung-Han Yeh , Der-Chyang Yeh

IPC分类号： H01L23/48 , H01L25/065 , H01L23/538 , H01L23/00 , H01L25/10 , H01L21/56 , H01L21/768 , H01L21/82 , H01L25/18 , H01L25/00 , H01L23/31 , H01L21/48 , H01L23/28 , H01L23/498 , H01L23/528

CPC分类号： H01L23/481 , H01L21/4853 , H01L21/486 , H01L21/56 , H01L21/561 , H01L21/563 , H01L21/565 , H01L21/568 , H01L21/76843 , H01L21/82 , H01L23/28 , H01L23/3128 , H01L23/49816 , H01L23/49838 , H01L23/528 , H01L23/5384 , H01L23/5386 , H01L23/5389 , H01L24/11 , H01L24/19 , H01L24/73 , H01L24/81 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L25/18 , H01L25/50 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/73267 , H01L2224/83 , H01L2224/92244 , H01L2224/97 , H01L2225/0651 , H01L2225/0652 , H01L2225/06541 , H01L2225/06548 , H01L2225/06568 , H01L2225/1035 , H01L2225/1058 , H01L2924/12042 , H01L2924/181 , H01L2924/18162 , H01L2924/00012 , H01L2924/00 , H01L2224/82

摘要： An interconnect structure and a method of forming an interconnect structure are provided. The interconnect structure is formed over a carrier substrate, upon which a die may also be attached. Upon removal of the carrier substrate and singulation, a first package is formed. A second package may be attached to the first package, wherein the second package may be electrically coupled to through vias formed in the first package.

3.

发明授权
Interconnect structure for package-on-package devices 有权

公开(公告)号：US10269685B2

公开(公告)日：2019-04-23

申请号：US15924997

申请日：2018-03-19

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jui-Pin Hung , Jing-Cheng Lin , Po-Hao Tsai , Yi-Jou Lin , Shuo-Mao Chen , Chiung-Han Yeh , Der-Chyang Yeh

IPC分类号： H01L23/12 , H01L21/00 , H01L23/48 , H01L23/00 , H01L23/528 , H01L25/065 , H01L23/538 , H01L23/28 , H01L23/498 , H01L21/56 , H01L25/10 , H01L21/768 , H01L21/82 , H01L25/18 , H01L25/00 , H01L21/48 , H01L23/31

摘要： An interconnect structure and a method of forming an interconnect structure are provided. The interconnect structure is formed over a carrier substrate, upon which a die may also be attached. Upon removal of the carrier substrate and singulation, a first package is formed. A second package may be attached to the first package, wherein the second package may be electrically coupled to through vias formed in the first package.

4.

发明授权
Using metal-containing layer to reduce carrier shock in package formation 有权

公开(公告)号：US10083949B2

公开(公告)日：2018-09-25

申请号：US15223862

申请日：2016-07-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Shin-Puu Jeng , Hsien-Wen Liu , Yi-Jou Lin

IPC分类号： H01L25/00 , H01L21/683 , H01L21/768 , H01L21/56 , H01L21/288 , H01L25/065

CPC分类号： H01L25/50 , H01L21/288 , H01L21/568 , H01L21/6835 , H01L21/76802 , H01L21/76874 , H01L21/76879 , H01L21/76885 , H01L23/3128 , H01L23/49816 , H01L23/5389 , H01L24/18 , H01L25/0657 , H01L25/105 , H01L2221/68345 , H01L2221/68359 , H01L2221/68381 , H01L2224/04105 , H01L2224/12105 , H01L2224/32145 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2224/73267 , H01L2224/92244 , H01L2225/0651 , H01L2225/0652 , H01L2225/06548 , H01L2225/06572 , H01L2225/1035 , H01L2225/1058 , H01L2924/15311 , H01L2924/00012 , H01L2924/00

摘要： A method includes forming a dielectric layer over a radiation de-bondable coating. The radiation de-bondable coating is over a carrier, and the radiation de-bondable coating includes metal particles therein. Metal posts are formed over the dielectric layer. A device die is attached to the dielectric layer. The device die and the metal posts are encapsulated in an encapsulating material. A plurality of redistribution lines is formed on a first side of the encapsulating material, and is electrically coupled to the device die and the metal posts. The carrier is de-bonded by projecting a radiation source on the radiation de-bondable coating to decompose the radiation de-bondable coating. Electrical connections are formed on a second side of the encapsulating material. The electrical connections are electrically coupled to the metal posts.

5.

发明申请
Packages with Passive Devices and Methods of Forming the Same 审中-公开
标题翻译：被动设备的包装及其形成方法

公开(公告)号：US20140073091A1

公开(公告)日：2014-03-13

申请号：US14080014

申请日：2013-11-14

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chen-Hua Yu , Shang-Yun Hou , Der-Chyang Yeh , Shuo-Mao Chen , Chiung-Han Yeh , Yi-Jou Lin

IPC分类号： H01L21/56

CPC分类号： H01L21/56 , H01L23/3192 , H01L23/49816 , H01L23/49822 , H01L23/49894 , H01L23/5389 , H01L23/64 , H01L24/19 , H01L27/016 , H01L28/00 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/92125 , H01L2924/181 , H01L2924/18162 , H01L2924/19011 , H01L2924/1903 , H01L2924/19031 , H01L2924/19033 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19104 , H01L2924/00012 , H01L2924/00

摘要： A device includes a substrate, a metal pad over the substrate, and a passivation layer having a portion over the metal pad. A Post-Passivation Interconnect (PPI) line is disposed over the passivation layer and electrically coupled to the metal pad. An Under-Bump Metallurgy (UBM) is disposed over and electrically coupled to the PPI line. A passive device includes a portion at a same level as the UBM. The portion of the passive device is formed of a same material as the UBM.

摘要翻译： 一种器件包括衬底，衬底上的金属焊盘以及具有在金属焊盘上的部分的钝化层。后钝化互连（PPI）线设置在钝化层上并电耦合到金属焊盘。爆炸性冶金（UBM）被布置在电气耦合到PPI线路上。无源设备包括与UBM处于相同水平的部分。无源器件的部分由与UBM相同的材料形成。

6.

发明申请
INTEGRATED FAN-OUT PACKAGE, PACKAGE-ON-PACKAGE STRUCTURE, AND MANUFACTURING METHOD THEREOF 有权

公开(公告)号：US20210358824A1

公开(公告)日：2021-11-18

申请号：US17382385

申请日：2021-07-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Shin-Puu Jeng , Hsien-Wen Liu , Shih-Ting Hung , Yi-Jou Lin , Tzu-Jui Fang , Po-Yao Chuang

IPC分类号： H01L23/31 , H01L21/56 , H01L21/48 , H01L23/528 , H01L25/00 , H01L23/538 , H01L23/00 , H01L25/065 , H01L25/10

摘要： An integrated fan-out package includes a first redistribution structure, a die, a plurality of conductive structures, an encapsulant, and a second redistribution structure. The die is bonded to the first redistribution structure through flip-chip bonding. The conductive structures surround the die. The encapsulant encapsulates the die and the conductive structures. The second redistribution structure is disposed on the encapsulant and is electrically connected to the first redistribution structure through the conductive structures. The second redistribution structure includes at least one conductive pattern layer that is in physical contact with the encapsulant. Top surfaces of the conductive structures contacting the second redistribution structure are coplanar with a top surface of the encapsulant.

7.

发明申请
Using Metal-Containing Layer to Reduce Carrier Shock in Package Formation 审中-公开

公开(公告)号：US20190027469A1

公开(公告)日：2019-01-24

申请号：US16139660

申请日：2018-09-24

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Shin-Puu Jeng , Hsien-Wen Liu , Yi-Jou Lin

IPC分类号： H01L25/00 , H01L23/31 , H01L21/288 , H01L21/768 , H01L21/56 , H01L21/683 , H01L25/065 , H01L25/10 , H01L23/00 , H01L23/538

CPC分类号： H01L25/50 , H01L21/288 , H01L21/568 , H01L21/6835 , H01L21/76802 , H01L21/76874 , H01L21/76879 , H01L21/76885 , H01L23/3128 , H01L23/49816 , H01L23/5389 , H01L24/18 , H01L25/0657 , H01L25/105 , H01L2221/68345 , H01L2221/68359 , H01L2221/68381 , H01L2224/04105 , H01L2224/12105 , H01L2224/32145 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2224/73267 , H01L2224/92244 , H01L2225/0651 , H01L2225/0652 , H01L2225/06548 , H01L2225/06572 , H01L2225/1035 , H01L2225/1058 , H01L2924/15311 , H01L2924/00012

摘要： A method includes forming a dielectric layer over a radiation de-bondable coating. The radiation de-bondable coating is over a carrier, and the radiation de-bondable coating includes metal particles therein. Metal posts are formed over the dielectric layer. A device die is attached to the dielectric layer. The device die and the metal posts are encapsulated in an encapsulating material. A plurality of redistribution lines is formed on a first side of the encapsulating material, and is electrically coupled to the device die and the metal posts. The carrier is de-bonded by projecting a radiation source on the radiation de-bondable coating to decompose the radiation de-bondable coating. Electrical connections are formed on a second side of the encapsulating material. The electrical connections are electrically coupled to the metal posts.