公开(公告)号：US11037861B2

公开(公告)日：2021-06-15

申请号：US16683672

申请日：2019-11-14

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jui-Pin Hung ,  Jing-Cheng Lin ,  Po-Hao Tsai ,  Yi-Jou Lin ,  Shuo-Mao Chen ,  Chiung-Han Yeh ,  Der-Chyang Yeh

IPC分类号： H01L23/12 ,  H01L21/00 ,  H01L23/48 ,  H01L23/00 ,  H01L23/528 ,  H01L25/065 ,  H01L23/538 ,  H01L23/28 ,  H01L23/498 ,  H01L21/56 ,  H01L25/10 ,  H01L21/768 ,  H01L21/82 ,  H01L25/18 ,  H01L25/00 ,  H01L21/48 ,  H01L23/31

摘要： An interconnect structure and a method of forming an interconnect structure are provided. The interconnect structure is formed over a carrier substrate, upon which a die may also be attached. Upon removal of the carrier substrate and singulation, a first package is formed. A second package may be attached to the first package, wherein the second package may be electrically coupled to through vias formed in the first package.

公开(公告)号：US10658492B2

公开(公告)日：2020-05-19

申请号：US16557423

申请日：2019-08-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Harry-Hak-Lay Chuang ,  Kong-Beng Thei ,  Sheng-Chen Chung ,  Chiung-Han Yeh ,  Lee-Wee Teo ,  Yu-Ying Hsu ,  Bao-Ru Young

IPC分类号： H01L23/62 ,  H01L29/66 ,  H01L27/06 ,  H01L27/092 ,  H01L49/02 ,  H01L29/78 ,  H01L21/8238 ,  H01L27/08

摘要： The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; and a passive polysilicon device disposed over the semiconductor substrate. The passive polysilicon device further includes a polysilicon feature; and a plurality of electrodes embedded in the polysilicon feature.

公开(公告)号：US20200083145A1

公开(公告)日：2020-03-12

申请号：US16683672

申请日：2019-11-14

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jui-Pin Hung ,  Jing-Cheng Lin ,  Po-Hao Tsai ,  Yi-Jou Lin ,  Shuo-Mao Chen ,  Chiung-Han Yeh ,  Der-Chyang Yeh

IPC分类号： H01L23/48 ,  H01L23/31 ,  H01L21/56 ,  H01L21/48 ,  H01L25/00 ,  H01L25/18 ,  H01L23/00 ,  H01L21/82 ,  H01L21/768 ,  H01L25/10 ,  H01L23/538 ,  H01L23/498 ,  H01L23/28 ,  H01L25/065 ,  H01L23/528

摘要： An interconnect structure and a method of forming an interconnect structure are provided. The interconnect structure is formed over a carrier substrate, upon which a die may also be attached. Upon removal of the carrier substrate and singulation, a first package is formed. A second package may be attached to the first package, wherein the second package may be electrically coupled to through vias formed in the first package.

公开(公告)号：US20190386116A1

公开(公告)日：2019-12-19

申请号：US16557423

申请日：2019-08-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Harry-Hak-Lay Chuang ,  Kong-Beng Thei ,  Sheng-Chen Chung ,  Chiung-Han Yeh ,  Lee-Wee Teo ,  Yu-Ying Hsu ,  Bao-Ru Young

IPC分类号： H01L29/66 ,  H01L27/06 ,  H01L27/092 ,  H01L49/02 ,  H01L29/78 ,  H01L21/8238

摘要： The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; and a passive polysilicon device disposed over the semiconductor substrate. The passive polysilicon device further includes a polysilicon feature; and a plurality of electrodes embedded in the polysilicon feature.

公开(公告)号：US20180212036A1

公开(公告)日：2018-07-26

申请号：US15925323

申请日：2018-03-19

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Harry-Hak-Lay Chuang ,  Kong-Beng Thei ,  Sheng-Chen Chung ,  Chiung-Han Yeh ,  Lee-Wee Teo ,  Yu-Ying Hsu ,  Bao-Ru Young

IPC分类号： H01L29/66 ,  H01L49/02 ,  H01L27/06 ,  H01L29/78 ,  H01L21/8238 ,  H01L27/092 ,  H01L27/08

CPC分类号： H01L29/66545 ,  H01L21/823842 ,  H01L27/0629 ,  H01L27/0802 ,  H01L27/0922 ,  H01L28/20 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2223/6672

摘要： The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; and a passive polysilicon device disposed over the semiconductor substrate. The passive polysilicon device further includes a polysilicon feature; and a plurality of electrodes embedded in the polysilicon feature.

公开(公告)号：US09460987B2

公开(公告)日：2016-10-04

申请号：US14720154

申请日：2015-05-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jui-Pin Hung ,  Jing-Cheng Lin ,  Po-Hao Tsai ,  Yi-Jou Lin ,  Shuo-Mao Chen ,  Chiung-Han Yeh ,  Der-Chyang Yeh

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L23/528 ,  H01L23/538 ,  H01L23/28 ,  H01L23/498 ,  H01L25/10 ,  H01L21/768 ,  H01L21/82 ,  H01L25/18 ,  H01L25/00 ,  H01L25/065 ,  H01L21/56

CPC分类号： H01L23/481 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/56 ,  H01L21/561 ,  H01L21/563 ,  H01L21/565 ,  H01L21/568 ,  H01L21/76843 ,  H01L21/82 ,  H01L23/28 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/528 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/19 ,  H01L24/73 ,  H01L24/81 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/83 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/0652 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06568 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/82

摘要： An interconnect structure and a method of forming an interconnect structure are provided. The interconnect structure is formed over a carrier substrate, upon which a die may also be attached. Upon removal of the carrier substrate and singulation, a first package is formed. A second package may be attached to the first package, wherein the second package may be electrically coupled to through vias formed in the first package.

摘要翻译： 提供互连结构和形成互连结构的方法。 互连结构形成在载体基板上，模具也可以附着在载体基板上。 在移除载体衬底和单片化时，形成第一封装。 第二封装可以附接到第一封装，其中第二封装可以电连接到形成在第一封装中的通孔。

公开(公告)号：US20210288163A1

公开(公告)日：2021-09-16

申请号：US17328394

申请日：2021-05-24

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Harry-Hak-Lay Chuang ,  Kong-Beng Thei ,  Sheng-Chen Chung ,  Chiung-Han Yeh ,  Lee-Wee Teo ,  Yu-Ying Hsu ,  Bao-Ru Young

IPC分类号： H01L29/66 ,  H01L27/06 ,  H01L27/092 ,  H01L49/02 ,  H01L29/78 ,  H01L21/8238

摘要： The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; and a passive polysilicon device disposed over the semiconductor substrate. The passive polysilicon device further includes a polysilicon feature; and a plurality of electrodes embedded in the polysilicon feature.

公开(公告)号：US09922903B2

公开(公告)日：2018-03-20

申请号：US15283118

申请日：2016-09-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jui-Pin Hung ,  Jing-Cheng Lin ,  Po-Hao Tsai ,  Yi-Jou Lin ,  Shuo-Mao Chen ,  Chiung-Han Yeh ,  Der-Chyang Yeh

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L23/528 ,  H01L25/065 ,  H01L23/538 ,  H01L23/28 ,  H01L23/498 ,  H01L25/10 ,  H01L21/768 ,  H01L21/82 ,  H01L25/18 ,  H01L25/00 ,  H01L21/48 ,  H01L23/31 ,  H01L21/56

CPC分类号： H01L23/481 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/56 ,  H01L21/561 ,  H01L21/563 ,  H01L21/565 ,  H01L21/568 ,  H01L21/76843 ,  H01L21/82 ,  H01L23/28 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/528 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/19 ,  H01L24/73 ,  H01L24/81 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/83 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/0652 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06568 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/82

摘要： An interconnect structure and a method of forming an interconnect structure are provided. The interconnect structure is formed over a carrier substrate, upon which a die may also be attached. Upon removal of the carrier substrate and singulation, a first package is formed. A second package may be attached to the first package, wherein the second package may be electrically coupled to through vias formed in the first package.

公开(公告)号：US20170025397A1

公开(公告)日：2017-01-26

申请号：US15283118

申请日：2016-09-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jui-Pin Hung ,  Jing-Cheng Lin ,  Po-Hao Tsai ,  Yi-Jou Lin ,  Shuo-Mao Chen ,  Chiung-Han Yeh ,  Der-Chyang Yeh

IPC分类号： H01L25/10 ,  H01L21/48 ,  H01L25/00 ,  H01L21/56 ,  H01L25/065 ,  H01L23/31

CPC分类号： H01L23/481 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/56 ,  H01L21/561 ,  H01L21/563 ,  H01L21/565 ,  H01L21/568 ,  H01L21/76843 ,  H01L21/82 ,  H01L23/28 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/528 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/19 ,  H01L24/73 ,  H01L24/81 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/83 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/0652 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06568 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/82

摘要： An interconnect structure and a method of forming an interconnect structure are provided. The interconnect structure is formed over a carrier substrate, upon which a die may also be attached. Upon removal of the carrier substrate and singulation, a first package is formed. A second package may be attached to the first package, wherein the second package may be electrically coupled to through vias formed in the first package.

摘要翻译： 提供互连结构和形成互连结构的方法。 互连结构形成在载体基板上，模具也可以附着在载体基板上。 在移除载体衬底和单片化时，形成第一封装。 第二封装可以附接到第一封装，其中第二封装可以电耦合到形成在第一封装中的通孔。

公开(公告)号：US09048222B2

公开(公告)日：2015-06-02

申请号：US13787547

申请日：2013-03-06

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jui-Pin Hung ,  Jing-Cheng Lin ,  Po-Hao Tsai ,  Yi-Jou Lin ,  Shuo-Mao Chen ,  Chiung-Han Yeh ,  Der-Chyang Yeh

IPC分类号： H01L21/00 ,  H01L23/34 ,  H01L23/48 ,  H01L23/00 ,  H01L23/528 ,  H01L23/538 ,  H01L25/10 ,  H01L25/065 ,  H01L21/56

CPC分类号： H01L23/481 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/56 ,  H01L21/561 ,  H01L21/563 ,  H01L21/565 ,  H01L21/568 ,  H01L21/76843 ,  H01L21/82 ,  H01L23/28 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/528 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/19 ,  H01L24/73 ,  H01L24/81 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/83 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/0652 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06568 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/82

摘要： An interconnect structure and a method of forming an interconnect structure are provided. The interconnect structure is formed over a carrier substrate, upon which a die may also be attached. Upon removal of the carrier substrate and singulation, a first package is formed. A second package may be attached to the first package, wherein the second package may be electrically coupled to through vias formed in the first package.

摘要翻译： 提供互连结构和形成互连结构的方法。 互连结构形成在载体基板上，模具也可以附着在载体基板上。 在移除载体衬底和单片化时，形成第一封装。 第二封装可以附接到第一封装，其中第二封装可以电耦合到形成在第一封装中的通孔。