- 专利标题： Polysilicon Design for Replacement Gate Technology
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申请号： US17328394申请日： 2021-05-24
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公开(公告)号： US20210288163A1公开(公告)日： 2021-09-16
- 发明人: Harry-Hak-Lay Chuang , Kong-Beng Thei , Sheng-Chen Chung , Chiung-Han Yeh , Lee-Wee Teo , Yu-Ying Hsu , Bao-Ru Young
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L27/06 ; H01L27/092 ; H01L49/02 ; H01L29/78 ; H01L21/8238
摘要：
The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; and a passive polysilicon device disposed over the semiconductor substrate. The passive polysilicon device further includes a polysilicon feature; and a plurality of electrodes embedded in the polysilicon feature.
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