公开(公告)号：US20230387316A1

公开(公告)日：2023-11-30

申请号：US17825516

申请日：2022-05-26

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Shuen-Shin LIANG ,  Min-Chiang CHUANG ,  Chia-Cheng CHEN ,  Chun-Hung WU ,  Liang-Yin CHEN ,  Sung-Li WANG ,  Pinyen LIN ,  Kuan-Kan HU ,  Jhih-Rong HUANG ,  Szu-Hsian LEE ,  Tsun-Jen CHAN ,  Cheng-Wei LIAN ,  Po-Chin CHANG ,  Chuan-Hui SHEN ,  Lin-Yu HUANG ,  Yuting CHENG ,  Yan-Ming TSAI ,  Hong-Mao LEE

IPC分类号： H01L29/786 ,  H01L29/417

CPC分类号： H01L29/78651 ,  H01L29/41733

摘要： A semiconductor device includes a source/drain portion, a metal silicide layer disposed over the source/drain portion, and a transition layer disposed between the source/drain portion and the metal silicide layer. The transition layer includes implantation elements, and an atomic concentration of the implantation elements in the transition layer is higher than that in each of the source/drain portion and the metal silicide layer so as to reduce a contact resistance between the source/drain portion and the metal silicide layer. Methods for manufacturing the semiconductor device are also disclosed.

公开(公告)号：US20240332393A1

公开(公告)日：2024-10-03

申请号：US18741963

申请日：2024-06-13

申请人： Taiwan Semiconductor Manufacturing Company, LTD.

发明人： Hsu-Kai CHANG ,  Jhih-Rong HUANG ,  Yen-Tien TUNG ,  Chia-Hung CHU ,  Shuen-Shin LIANG ,  Tzer-Min SHEN ,  Pinyen LIN ,  Sung-Li WANG

IPC分类号： H01L29/45 ,  H01L21/285 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/45 ,  H01L21/28518 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823871 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/7851

摘要： A semiconductor device with different configurations of contact structures and a method of fabricating the same are disclosed. The semiconductor device includes first and second gate structures disposed on first and second fin structures, first and second source/drain (S/D) regions disposed on the first and second fin structures, first and second contact structures disposed on the first and second S/D regions, and a dipole layer disposed at an interface between the first nWFM silicide layer and the first S/D region. The first contact structure includes a first nWFM silicide layer disposed on the first S/D region and a first contact plug disposed on the first nWFM silicide layer. The second contact structure includes a pWFM silicide layer disposed on the second S/D region, a second nWFM silicide layer disposed on the pWFM silicide layer, and a second contact plug disposed on the pWFM silicide layer.

公开(公告)号：US20240038595A1

公开(公告)日：2024-02-01

申请号：US17876389

申请日：2022-07-28

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Kuan-Kan HU ,  Jhih-Rong HUANG ,  Yi-Bo LIAO ,  Shuen-Shin LIANG ,  Min-Chiang CHUANG ,  Sung-Li WANG ,  Wei-Yen WOON ,  Szuya LIAO

IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/417 ,  H01L29/45 ,  H01L21/285

CPC分类号： H01L21/823871 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/45 ,  H01L21/28518 ,  H01L21/823814 ,  H01L21/823821

摘要： A method for manufacturing a semiconductor device is provided. The method includes forming a first transistor over a substrate, wherein the first transistor comprises a first source/drain feature; depositing an interlayer dielectric layer around the first transistor; etching an opening in the interlayer dielectric layer to expose the first source/drain feature; conformably depositing a semimetal layer over the interlayer dielectric layer, wherein the semimetal layer has a first portion in the opening in the interlayer dielectric layer and a second portion over a top surface of the interlayer dielectric layer; and forming a source/drain contact in the opening in the interlayer dielectric layer.

公开(公告)号：US20230282715A1

公开(公告)日：2023-09-07

申请号：US17685517

申请日：2022-03-03

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Jhih-Rong HUANG ,  Mrunal Abhijith KHADERBAD ,  Yi-Bo LIAO ,  Yen-Tien TUNG ,  Wei-Yen WOON

IPC分类号： H01L29/417 ,  H01L27/088

CPC分类号： H01L29/41725 ,  H01L27/088

摘要： A semiconductor structure includes a semiconductor substrate, a first source/drain portion, a second source/drain portion, a first metal contact, a second metal contact and a first conductive carbon layer. The first and second source/drain portions are formed over the semiconductor substrate, and are spaced apart from each other. The first source/drain portion has a conductivity type different from that of the second source/drain portion. The first and second metal contacts are respectively formed on the first and second source/drain portions. The first conductive carbon layer is formed between the first source/drain portion and the first metal contact.