公开(公告)号：US20230299168A1

公开(公告)日：2023-09-21

申请号：US17695075

申请日：2022-03-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Kuan-Kan HU ,  Shuen-Shin LIANG ,  Chia-Hung CHU ,  Po-Chin CHANG ,  Hsu-Kai CHANG ,  Ken-Yu CHANG ,  Wei-Yip LOH ,  Hung-Yi HUANG ,  Harry CHIEN ,  Sung-Li WANG ,  Pinyen LIN ,  Chuan-Hui SHEN ,  Tzu-Pei CHEN ,  Yuting CHENG

IPC: H01L29/45 ,  H01L29/40 ,  H01L29/417

CPC classification number: H01L29/45 ,  H01L29/401 ,  H01L29/41791 ,  H01L29/41733 ,  H01L23/5226

Abstract: A semiconductor device includes a semiconductor substrate, an epitaxial structure, a silicide structure, a conductive structure, and a protection segment. The epitaxial structure is disposed in the semiconductor substrate. The silicide structure is disposed in the epitaxial structure. The conductive structure is disposed over the silicide structure and is electrically connected to the silicide structure. The protection segment is made of metal nitride, is disposed over the silicide structure, and is disposed between the silicide structure and the conductive structure.

公开(公告)号：US20250063758A1

公开(公告)日：2025-02-20

申请号：US18937604

申请日：2024-11-05

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Cheng-Wei CHANG ,  Chia-Hung CHU ,  Hsu-Kai CHANG ,  Sung-Li WANG ,  Kuan-Kan HU ,  Shuen-Shin LIANG ,  Kao-Feng LIN ,  Hung Pin LU ,  Yi-Ying LIU ,  Chuan-Hui SHEN

IPC: H01L29/78 ,  H01L21/285 ,  H01L21/768 ,  H01L29/40 ,  H01L29/417

Abstract: A titanium precursor is used to selectively form a titanium silicide (TiSix) layer in a semiconductor device. A plasma-based deposition operation is performed in which the titanium precursor is provided into an opening, and a reactant gas and a plasma are used to cause silicon to diffuse to a top surface of a transistor structure. The diffusion of silicon results in the formation of a silicon-rich surface of the transistor structure, which increases the selectivity of the titanium silicide formation relative to other materials of the semiconductor device. The titanium precursor reacts with the silicon-rich surface to form the titanium silicide layer. The selective titanium silicide layer formation results in the formation of a titanium silicon nitride (TiSixNy) on the sidewalls in the opening, which enables a conductive structure such as a metal source/drain contact to be formed in the opening without the addition of another barrier layer.

公开(公告)号：US20230402366A1

公开(公告)日：2023-12-14

申请号：US17836781

申请日：2022-06-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Shuen-Shin LIANG ,  Chia-Hung CHU ,  Po-Chin CHANG ,  Hsu-Kai CHANG ,  Kuan-Kan HU ,  Ken-Yu CHANG ,  Hung-Yi HUANG ,  Harry CHIEN ,  Wei-Yip LOH ,  Chun-I TSAI ,  Hong-Mao LEE ,  Sung-Li WANG ,  Pinyen LIN ,  Chuan-Hui SHEN

IPC: H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/5226 ,  H01L23/53266 ,  H01L21/76843 ,  H01L21/76883

Abstract: A semiconductor device includes a substrate, a source/drain region disposed in the substrate, a silicide structure disposed on the source/drain region, a first dielectric layer disposed over the substrate, a conductive contact disposed in the first dielectric layer and over the silicide structure, a second dielectric layer disposed over the first dielectric layer, a via contact disposed in the second dielectric layer and connected to the conductive contact, and a first metal surrounding the via contact.

公开(公告)号：US20230387316A1

公开(公告)日：2023-11-30

申请号：US17825516

申请日：2022-05-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Shuen-Shin LIANG ,  Min-Chiang CHUANG ,  Chia-Cheng CHEN ,  Chun-Hung WU ,  Liang-Yin CHEN ,  Sung-Li WANG ,  Pinyen LIN ,  Kuan-Kan HU ,  Jhih-Rong HUANG ,  Szu-Hsian LEE ,  Tsun-Jen CHAN ,  Cheng-Wei LIAN ,  Po-Chin CHANG ,  Chuan-Hui SHEN ,  Lin-Yu HUANG ,  Yuting CHENG ,  Yan-Ming TSAI ,  Hong-Mao LEE

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/78651 ,  H01L29/41733

Abstract: A semiconductor device includes a source/drain portion, a metal silicide layer disposed over the source/drain portion, and a transition layer disposed between the source/drain portion and the metal silicide layer. The transition layer includes implantation elements, and an atomic concentration of the implantation elements in the transition layer is higher than that in each of the source/drain portion and the metal silicide layer so as to reduce a contact resistance between the source/drain portion and the metal silicide layer. Methods for manufacturing the semiconductor device are also disclosed.