公开(公告)号：US20230387316A1

公开(公告)日：2023-11-30

申请号：US17825516

申请日：2022-05-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Shuen-Shin LIANG ,  Min-Chiang CHUANG ,  Chia-Cheng CHEN ,  Chun-Hung WU ,  Liang-Yin CHEN ,  Sung-Li WANG ,  Pinyen LIN ,  Kuan-Kan HU ,  Jhih-Rong HUANG ,  Szu-Hsian LEE ,  Tsun-Jen CHAN ,  Cheng-Wei LIAN ,  Po-Chin CHANG ,  Chuan-Hui SHEN ,  Lin-Yu HUANG ,  Yuting CHENG ,  Yan-Ming TSAI ,  Hong-Mao LEE

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/78651 ,  H01L29/41733

Abstract: A semiconductor device includes a source/drain portion, a metal silicide layer disposed over the source/drain portion, and a transition layer disposed between the source/drain portion and the metal silicide layer. The transition layer includes implantation elements, and an atomic concentration of the implantation elements in the transition layer is higher than that in each of the source/drain portion and the metal silicide layer so as to reduce a contact resistance between the source/drain portion and the metal silicide layer. Methods for manufacturing the semiconductor device are also disclosed.