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公开(公告)号：US12046510B2
公开(公告)日：2024-07-23
申请号：US17339082
申请日：2021-06-04
发明人： Wei-Yip Loh , Chih-Wei Chang , Hong-Mao Lee , Chun-Hsien Huang , Yu-Ming Huang , Yan-Ming Tsai , Yu-Shiuan Wang , Hung-Hsu Chen , Yu-Kai Chen , Yu-Wen Cheng
IPC分类号： H01L21/768 , H01L21/8234 , H01L23/522 , H01L29/08 , H01L29/417 , H01L29/66 , H01L21/285 , H01L29/78
CPC分类号： H01L21/76856 , H01L21/76805 , H01L21/823425 , H01L21/823475 , H01L23/5226 , H01L29/0847 , H01L29/41791 , H01L29/66795 , H01L21/28518 , H01L29/785
摘要： Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.
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公开(公告)号：US11742210B2
公开(公告)日：2023-08-29
申请号：US17231670
申请日：2021-04-15
发明人： Meng-Han Chou , Kuan-Yu Yeh , Wei-Yip Loh , Hung-Hsu Chen , Su-Hao Liu , Liang-Yin Chen , Huicheng Chang , Yee-Chia Yeo
IPC分类号： H01L21/285 , H01L21/02 , H01L21/3115 , H01L29/45 , H01L21/768 , H01L21/311
CPC分类号： H01L21/28518 , H01L21/02063 , H01L21/31111 , H01L21/31155 , H01L21/76805 , H01L21/76814 , H01L21/76895 , H01L29/45
摘要： The present disclosure provides a method to enlarge the process window for forming a source/drain contact. The method may include receiving a workpiece that includes a source/drain feature exposed in a source/drain opening defined between two gate structures, conformally depositing a dielectric layer over sidewalls of the source/drain opening and a top surface of the source/drain feature, anisotropically etching the dielectric layer to expose the source/drain feature, performing an implantation process to the dielectric layer, and after the performing of the implantation process, performing a pre-clean process to the workpiece. The implantation process includes a non-zero tilt angle.
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公开(公告)号：US20220293474A1
公开(公告)日：2022-09-15
申请号：US17827355
申请日：2022-05-27
发明人： Wei-Yip Loh , Yan-Ming Tsai , Hung-Hsu Chen , Chih-Wei Chang , Sheng-Hsuan Lin
IPC分类号： H01L21/8238 , H01L29/66 , H01L29/08 , H01L27/092 , H01L29/45 , H01L21/285
摘要： A semiconductor device with multiple silicide regions is provided. In embodiments a first silicide precursor and a second silicide precursor are deposited on a source/drain region. A first silicide with a first phase is formed, and the second silicide precursor is insoluble within the first phase of the first silicide. The first phase of the first silicide is modified to a second phase of the first silicide, and the second silicide precursor being soluble within the second phase of the first silicide. A second silicide is formed with the second silicide precursor and the second phase of the first silicide.
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公开(公告)号：US10535748B2
公开(公告)日：2020-01-14
申请号：US15909838
申请日：2018-03-01
发明人： Yu-Wen Cheng , Cheng-Tung Lin , Chih-Wei Chang , Hong-Mao Lee , Ming-Hsing Tsai , Sheng-Hsuan Lin , Wei-Jung Lin , Yan-Ming Tsai , Yu-Shiuan Wang , Hung-Hsu Chen , Wei-Yip Loh , Ya-Yi Cheng
IPC分类号： H01L29/66 , H01L29/45 , H01L21/768 , H01L21/02 , H01L21/326 , H01L29/78 , H01L29/08 , H01L21/311 , H01L21/306 , H01L21/266 , H01L21/265 , H01L21/3105 , H01L21/321
摘要： Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.
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公开(公告)号：US11810826B2
公开(公告)日：2023-11-07
申请号：US17827355
申请日：2022-05-27
发明人： Wei-Yip Loh , Yan-Ming Tsai , Hung-Hsu Chen , Chih-Wei Chang , Sheng-Hsuan Lin
IPC分类号： H01L29/08 , H01L21/8238 , H01L29/66 , H01L27/092 , H01L29/45 , H01L21/285 , H01L21/3065 , H01L21/762 , H01L21/3105 , H01L21/311 , H01L21/266 , H01L29/78 , H01L21/3213
CPC分类号： H01L21/823814 , H01L21/28518 , H01L27/0924 , H01L29/0847 , H01L29/45 , H01L29/665 , H01L21/266 , H01L21/3065 , H01L21/31053 , H01L21/31111 , H01L21/32135 , H01L21/76224 , H01L21/823821 , H01L21/823828 , H01L21/823864 , H01L21/823878 , H01L29/66545 , H01L29/66636 , H01L29/7848
摘要： A semiconductor device with multiple silicide regions is provided. In embodiments a first silicide precursor and a second silicide precursor are deposited on a source/drain region. A first silicide with a first phase is formed, and the second silicide precursor is insoluble within the first phase of the first silicide. The first phase of the first silicide is modified to a second phase of the first silicide, and the second silicide precursor being soluble within the second phase of the first silicide. A second silicide is formed with the second silicide precursor and the second phase of the first silicide.
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公开(公告)号：US20230187201A1
公开(公告)日：2023-06-15
申请号：US18163424
申请日：2023-02-02
发明人： Ching-Yi Chen , Wei-Yip Loh , Hung-Hsu Chen , Chih-Wei Chang
IPC分类号： H01L21/02 , H01L27/088 , H01L29/78 , H01L29/417 , H01L29/66
CPC分类号： H01L21/02172 , H01L21/02164 , H01L21/02252 , H01L27/0886 , H01L29/7831 , H01L29/7848 , H01L29/7851 , H01L29/41791 , H01L29/66795
摘要： A nitrogen plasma treatment is used on an adhesion layer of a contact plug. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the adhesion layer. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the adhesion layer. A nitrogen plasma treatment is used on an opening in an insulating layer. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the insulating layer at the opening. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the insulating layer.
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公开(公告)号：US20220367667A1
公开(公告)日：2022-11-17
申请号：US17869521
申请日：2022-07-20
发明人： Yu-Wen Cheng , Cheng-Tung Lin , Chih-Wei Chang , Hong-Mao Lee , Ming-Hsing Tsai , Sheng-Hsuan Lin , Wei-Jung Lin , Yan-Ming Tsai , Yu-Shiuan Wang , Hung-Hsu Chen , Wei-Yip Loh , Ya-Yi Cheng
IPC分类号： H01L29/66 , H01L29/45 , H01L21/768 , H01L21/02 , H01L21/326 , H01L29/78 , H01L29/08
摘要： Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.
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公开(公告)号：US20210296168A1
公开(公告)日：2021-09-23
申请号：US17339082
申请日：2021-06-04
发明人： Wei-Yip Loh , Chih-Wei Chang , Hong-Mao Lee , Chun-Hsien Huang , Yu-Ming Huang , Yan-Ming Tsai , Yu-Shiuan Wang , Hung-Hsu Chen , Yu-Kai Chen , Yu-Wen Cheng
IPC分类号： H01L21/768 , H01L21/8234 , H01L29/08 , H01L23/522 , H01L29/417 , H01L29/66
摘要： Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.
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公开(公告)号：US11031286B2
公开(公告)日：2021-06-08
申请号：US15909762
申请日：2018-03-01
发明人： Wei-Yip Loh , Chih-Wei Chang , Hong-Mao Lee , Chun-Hsien Huang , Yu-Ming Huang , Yan-Ming Tsai , Yu-Shiuan Wang , Hung-Hsu Chen , Yu-Kai Chen , Yu-Wen Cheng
IPC分类号： H01L21/768 , H01L21/8234 , H01L29/08 , H01L23/522 , H01L29/417 , H01L29/66 , H01L29/78 , H01L21/285
摘要： Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.
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公开(公告)号：US20240332076A1
公开(公告)日：2024-10-03
申请号：US18738443
申请日：2024-06-10
发明人： Wei-Yip Loh , Chih-Wei Chang , Hong-Mao Lee , Chun-Hsien Huang , Yu-Ming Huang , Yan-Ming Tsai , Yu-Shiuan Wang , Hung-Hsu Chen , Yu-Kai Chen , Yu-Wen Cheng
IPC分类号： H01L21/768 , H01L21/285 , H01L21/8234 , H01L23/522 , H01L29/08 , H01L29/417 , H01L29/66 , H01L29/78
CPC分类号： H01L21/76856 , H01L21/76805 , H01L21/823425 , H01L21/823475 , H01L23/5226 , H01L29/0847 , H01L29/41791 , H01L29/66795 , H01L21/28518 , H01L29/785
摘要： Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.
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