公开(公告)号：US20230187201A1

公开(公告)日：2023-06-15

申请号：US18163424

申请日：2023-02-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Yi Chen ,  Wei-Yip Loh ,  Hung-Hsu Chen ,  Chih-Wei Chang

IPC: H01L21/02 ,  H01L27/088 ,  H01L29/78 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L21/02172 ,  H01L21/02164 ,  H01L21/02252 ,  H01L27/0886 ,  H01L29/7831 ,  H01L29/7848 ,  H01L29/7851 ,  H01L29/41791 ,  H01L29/66795

Abstract: A nitrogen plasma treatment is used on an adhesion layer of a contact plug. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the adhesion layer. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the adhesion layer. A nitrogen plasma treatment is used on an opening in an insulating layer. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the insulating layer at the opening. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the insulating layer.

公开(公告)号：US20220277997A1

公开(公告)日：2022-09-01

申请号：US17664495

申请日：2022-05-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Yi Chen ,  Sheng-Hsuan Lin ,  Wei-Yip Loh ,  Hung-Hsu Chen ,  Chih-Wei Chang

IPC: H01L21/768 ,  H01L29/66 ,  H01L29/78 ,  H01L27/092 ,  H01L21/02 ,  H01L21/8238

Abstract: A method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.

公开(公告)号：US12009200B2

公开(公告)日：2024-06-11

申请号：US18163424

申请日：2023-02-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Yi Chen ,  Wei-Yip Loh ,  Hung-Hsu Chen ,  Chih-Wei Chang

IPC: H01L29/94 ,  H01L21/02 ,  H01L27/088 ,  H01L29/417 ,  H01L29/66 ,  H01L29/76 ,  H01L29/78

CPC classification number: H01L21/02172 ,  H01L21/02164 ,  H01L21/02252 ,  H01L27/0886 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/7831 ,  H01L29/7848 ,  H01L29/7851

Abstract: A nitrogen plasma treatment is used on an adhesion layer of a contact plug. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the adhesion layer. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the adhesion layer. A nitrogen plasma treatment is used on an opening in an insulating layer. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the insulating layer at the opening. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the insulating layer.

公开(公告)号：US11594410B2

公开(公告)日：2023-02-28

申请号：US17001179

申请日：2020-08-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Yi Chen ,  Wei-Yip Loh ,  Hung-Hsu Chen ,  Chih-Wei Chang

IPC: H01L29/76 ,  H01L29/94 ,  H01L21/02 ,  H01L27/088 ,  H01L29/78 ,  H01L29/417 ,  H01L29/66

Abstract: A nitrogen plasma treatment is used on an adhesion layer of a contact plug. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the adhesion layer. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the adhesion layer. A nitrogen plasma treatment is used on an opening in an insulating layer. As a result of the nitrogen plasma treatment, nitrogen is incorporated into the insulating layer at the opening. When a contact plug is deposited in the opening, an interlayer of a metal nitride is formed between the contact plug and the insulating layer.

公开(公告)号：US20240136227A1

公开(公告)日：2024-04-25

申请号：US18402859

申请日：2024-01-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Yi Chen ,  Sheng-Hsuan Lin ,  Wei-Yip Loh ,  Hung-Hsu Chen ,  Chih-Wei Chang

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/76897 ,  H01L21/02123 ,  H01L21/02269 ,  H01L21/02274 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/823821 ,  H01L21/823871 ,  H01L27/0924 ,  H01L29/66795 ,  H01L29/785

Abstract: A method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.

公开(公告)号：US11901229B2

公开(公告)日：2024-02-13

申请号：US17664495

申请日：2022-05-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Yi Chen ,  Sheng-Hsuan Lin ,  Wei-Yip Loh ,  Hung-Hsu Chen ,  Chih-Wei Chang

IPC: H01L29/66 ,  H01L21/768 ,  H01L29/78 ,  H01L27/092 ,  H01L21/02 ,  H01L21/8238

CPC classification number: H01L21/76897 ,  H01L21/02123 ,  H01L21/02269 ,  H01L21/02274 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/823821 ,  H01L21/823871 ,  H01L27/0924 ,  H01L29/66795 ,  H01L29/785

Abstract: A method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.

公开(公告)号：US20230260836A1

公开(公告)日：2023-08-17

申请号：US17663315

申请日：2022-05-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pei Shan Chang ,  Yi-Hsiang Chao ,  Chun-Hsien Huang ,  Peng-Hao Hsu ,  Kevin Lee ,  Shu-Lan Chang ,  Ya-Yi Cheng ,  Ching-Yi Chen ,  Wei-Jung Lin ,  Chih-Wei Chang ,  Ming-Hsing Tsai

IPC: H01L21/768 ,  H01L29/786 ,  H01L29/06 ,  H01L29/66 ,  H01L21/8234

CPC classification number: H01L21/76852 ,  H01L29/78618 ,  H01L29/0665 ,  H01L29/78696 ,  H01L29/66742 ,  H01L21/823418 ,  H01L21/76876

Abstract: A method includes forming a dielectric layer over a source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the source/drain region. A conductive liner is formed on sidewalls and a bottom of the opening. A surface modification process is performed on an exposed surface of the conductive liner. The surface modification process forms a surface coating layer over the conductive liner. The surface coating layer is removed to expose the conductive liner. The conductive liner is removed from the sidewalls of the opening. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with a remaining portion of the conductive liner and the dielectric layer.