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公开(公告)号：US20240363353A1
公开(公告)日：2024-10-31
申请号：US18449443
申请日：2023-08-14
发明人： Pin-Wen Chen , Yu-Chen Ko , Chi-Yuan Chen , Ya-Yi Cheng , Chun-I Tsai , Wei-Jung Lin , Chih-Wei Chang , Ming-Hsing Tsai , Syun-Ming Jang , Wei-Jen Lo
IPC分类号： H01L21/285 , H01L29/45 , H01L29/66 , H01L29/78
CPC分类号： H01L21/28518 , H01L29/45 , H01L29/66795 , H01L29/7851
摘要： A method of forming a semiconductor device includes: forming a gate structure over a fin that protrudes above a substrate; forming a source/drain region over the fin adjacent to the gate structure; forming an interlayer dielectric (ILD) layer over the source/drain region around the gate structure; forming an opening in the ILD layer to expose the source/drain region; forming a silicide region and a barrier layer successively in the openings over the source/drain region, where the barrier layer includes silicon nitride; reducing a concentration of silicon nitride in a surface portion of the barrier layer exposed to the opening; after the reducing, forming a seed layer on the barrier layer; and forming an electrically conductive material on the seed layer to fill the opening.
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公开(公告)号：US12002712B2
公开(公告)日：2024-06-04
申请号：US17809922
申请日：2022-06-30
发明人： Chun-Hsien Huang , I-Li Chen , Pin-Wen Chen , Yuan-Chen Hsu , Wei-Jung Lin , Chih-Wei Chang , Ming-Hsing Tsai
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532
CPC分类号： H01L21/76861 , H01L21/76805 , H01L21/76826 , H01L21/76843 , H01L21/76877 , H01L23/5226 , H01L23/53257 , H01L23/53266
摘要： A method includes forming a first metallic feature, forming a dielectric layer over the first metallic feature, etching the dielectric layer to form an opening, with a top surface of the first metallic feature being exposed through the opening, and performing a first treatment on the top surface of the first metallic feature. The first treatment is performed through the opening, and the first treatment is performed using a first process gas. After the first treatment, a second treatment is performed through the opening, and the second treatment is performed using a second process gas different from the first process gas. A second metallic feature is deposited in the opening.
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公开(公告)号：US20230369109A1
公开(公告)日：2023-11-16
申请号：US18359036
申请日：2023-07-26
发明人： Yu Shih Wang , Chun-I Tsai , Shian Wei Mao , Ken-Yu Chang , Ming-Hsing Tsai , Wei-Jung Lin
IPC分类号： H01L21/768 , H01L23/532 , H01L21/3213 , H01L23/485
CPC分类号： H01L21/76847 , H01L21/32134 , H01L21/76846 , H01L23/485 , H01L23/53223 , H01L23/53238 , H01L23/53252 , H01L23/53266
摘要： Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back. After etching back the portion of the barrier layer, an upper portion of the barrier layer along the sidewall is smoothed. A conductive material is formed along the barrier layer and over the smoothed upper portion of the barrier layer.
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公开(公告)号：US20230223302A1
公开(公告)日：2023-07-13
申请号：US17663302
申请日：2022-05-13
发明人： Pin-Wen Chen , Chang-Ting Chung , Yi-Hsiang Chao , Yu-Ting Wen , Kai-Chieh Yang , Yu-Chen Ko , Peng-Hao Hsu , Ya-Yi Cheng , Min-Hsiu Hung , Chun-Hsien Huang , Wei-Jung Lin , Chih-Wei Chang , Ming-Hsing Tsai
IPC分类号： H01L21/768 , H01L23/535 , H01L21/02
CPC分类号： H01L21/76895 , H01L23/535 , H01L21/02063 , H01L21/76805 , H01L21/76814 , H01L21/76843 , H01L21/76865 , H01L21/76868 , H01L21/76889
摘要： A method includes forming a dielectric layer over an epitaxial source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the epitaxial source/drain region. A barrier layer is formed on a sidewall and a bottom of the opening. An oxidation process is performing on the sidewall and the bottom of the opening. The oxidation process transforms a portion of the barrier layer into an oxidized barrier layer and transforms a portion of the dielectric layer adjacent to the oxidized barrier layer into a liner layer. The oxidized barrier layer is removed. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with the liner layer.
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公开(公告)号：US11676859B2
公开(公告)日：2023-06-13
申请号：US17372671
申请日：2021-07-12
发明人： Ken-Yu Chang , Chun-I Tsai , Ming-Hsing Tsai , Wei-Jung Lin
IPC分类号： H01L21/768 , H01L29/66 , H01L21/8234 , H01L21/67
CPC分类号： H01L21/76846 , H01L21/67075 , H01L21/76877 , H01L21/823418 , H01L21/823475 , H01L29/66545
摘要： Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back by a wet etching process. After etching back the portion of the barrier layer, an underlying dielectric welding layer is exposed. A conductive material is formed along the barrier layer.
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公开(公告)号：US20230155004A1
公开(公告)日：2023-05-18
申请号：US17651721
申请日：2022-02-18
发明人： Pei-Wen Wu , Chun-Hsien Huang , Wei-Jung Lin , Chih-Wei Chang
IPC分类号： H01L29/66 , H01L29/417 , H01L29/78 , H01L29/06 , H01L29/786 , H01L21/8234
CPC分类号： H01L29/66795 , H01L21/823412 , H01L21/823418 , H01L21/823431 , H01L21/823481 , H01L29/0649 , H01L29/0665 , H01L29/7851 , H01L29/41791 , H01L29/66742 , H01L29/78618 , H01L29/78696
摘要： A method includes depositing an inter-layer dielectric (ILD) over a source/drain region; forming a contact opening through the ILD, wherein the contact opening exposes the source/drain region; forming a metal-semiconductor alloy region on the source/drain region; depositing a first layer of a conductive material on the metal-semiconductor alloy region; depositing an isolation material along sidewalls of the contact opening and over the first layer of the conductive material; etching the isolation material to expose the first layer of the conductive material, wherein the isolation material extends along sidewalls of the contact opening after etching the isolation material; and depositing a second layer of the conductive material on the first layer of the conductive material.
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公开(公告)号：US11411094B2
公开(公告)日：2022-08-09
申请号：US16740881
申请日：2020-01-13
发明人： Yu-Wen Cheng , Cheng-Tung Lin , Chih-Wei Chang , Hong-Mao Lee , Ming-Hsing Tsai , Sheng-Hsuan Lin , Wei-Jung Lin , Yan-Ming Tsai , Yu-Shiuan Wang , Hung-Hsu Chen , Wei-Yip Loh , Ya-Yi Cheng
IPC分类号： H01L29/66 , H01L29/45 , H01L21/768 , H01L21/02 , H01L21/326 , H01L29/78 , H01L29/08 , H01L21/311 , H01L21/306 , H01L21/266 , H01L21/265 , H01L21/3105 , H01L21/321
摘要： Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.
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公开(公告)号：US20210193517A1
公开(公告)日：2021-06-24
申请号：US17195211
申请日：2021-03-08
发明人： Pin-Wen Chen , Chia-Han Lai , Chih-Wei Chang , Mei-Hui Fu , Ming-Hsing Tsai , Wei-Jung Lin , Yu-Shih Wang , Ya-Yi Cheng , I-Li Chen
IPC分类号： H01L21/768 , H01L23/535 , H01L21/3213 , H01L21/285
摘要： The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.
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公开(公告)号：US20170287779A1
公开(公告)日：2017-10-05
申请号：US15628267
申请日：2017-06-20
发明人： Chun-Hsien Huang , Hong-Mao Lee , Hsien-Lung Yang , Yu-Kai Chen , Wei-Jung Lin
IPC分类号： H01L21/768 , H01L21/8238
摘要： A semiconductor device is disclosed. The device includes a source/drain feature formed over a substrate. A dielectric layer formed over the source/drain feature. A contact trench formed through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer deposited in the contact trench and a cobalt layer deposited over the TiN layer in the contact trench.
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公开(公告)号：US20230268228A1
公开(公告)日：2023-08-24
申请号：US18308743
申请日：2023-04-28
发明人： Ken-Yu Chang , Chun-I Tsai , Ming-Hsing Tsai , Wei-Jung Lin
IPC分类号： H01L21/768 , H01L29/66 , H01L21/8234 , H01L21/67
CPC分类号： H01L21/76846 , H01L21/67075 , H01L21/76877 , H01L21/823418 , H01L21/823475 , H01L29/66545
摘要： Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back by a wet etching process. After etching back the portion of the barrier layer, an underlying dielectric welding layer is exposed. A conductive material is formed along the barrier layer.
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