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公开(公告)号:US20240160826A1
公开(公告)日:2024-05-16
申请号:US18512411
申请日:2023-11-17
Inventor: Sheng-Hsiung Chen , Huang-Yu Chen , Chung-Hsing Wang , Jerry Chang Jui Kao
IPC: G06F30/3947 , G06F30/39
CPC classification number: G06F30/3947 , G06F30/39
Abstract: The routing of conductors in the conductor layers in an integrated circuit are routed using mixed-Manhattan-diagonal routing. Various techniques are disclosed for selecting a conductor scheme for the integrated circuit prior to fabrication of the integrated circuit. Techniques are also disclosed for determining the supply and/or the demand for the edges in the mixed-Manhattan-diagonal routing.
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公开(公告)号:US11861284B2
公开(公告)日:2024-01-02
申请号:US17937654
申请日:2022-10-03
Inventor: Sheng-Hsiung Chen , Huang-Yu Chen , Chung-Hsing Wang , Jerry Chang Jui Kao
IPC: G06F30/00 , G06F30/3947 , G06F30/39
CPC classification number: G06F30/3947 , G06F30/39
Abstract: The routing of conductors in the conductor layers in an integrated circuit are routed using mixed-Manhattan-diagonal routing. Various techniques are disclosed for selecting a conductor scheme for the integrated circuit prior to fabrication of the integrated circuit. Techniques are also disclosed for determining the supply and/or the demand for the edges in the mixed-Manhattan-diagonal routing.
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公开(公告)号:US11727185B2
公开(公告)日:2023-08-15
申请号:US17815013
申请日:2022-07-26
Inventor: Shao-Huan Wang , Sheng-Hsiung Chen , Wen-Hao Chen , Chun-Chen Chen , Hung-Chih Ou
IPC: G06F30/394 , G06F30/20 , G06F30/327 , G06F30/392 , G06F30/3312 , G06F30/373 , G06F30/33 , G06F30/337 , G06F30/398 , H01L23/52 , H01L23/522 , G06F111/04 , G06F119/12
CPC classification number: G06F30/394 , G06F30/20 , G06F30/327 , G06F30/3312 , G06F30/392 , G06F30/33 , G06F30/337 , G06F30/373 , G06F30/398 , G06F2111/04 , G06F2119/12 , H01L23/5226
Abstract: A system includes a non-transitory computer readable medium configured to store instructions thereon. The system further includes a processor connected to the non-transitory computer readable medium. The processor is configured to execute the instruction for comparing a size of a via pillar structure of a first layout pattern of a plurality of layout patterns with a size of a via pillar structure of a second layout pattern of the plurality of layout patterns, wherein each of the plurality of layout patterns meets an electromigration (EM) rule. The processor is further configured to execute the instructions for replacing, in a layout design, the first layout pattern with the second layout pattern in response to the size of the via pillar structure of the second layout pattern being less than the size of the via pillar structure of the first layout pattern.
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公开(公告)号:US11367695B2
公开(公告)日:2022-06-21
申请号:US16439295
申请日:2019-06-12
Inventor: Fong-yuan Chang , Cheng-Hung Yeh , Hsiang-Ho Chang , Po-Hsiang Huang , Chin-Her Chien , Sheng-Hsiung Chen , Aftab Alam Khan , Keh-Jeng Chang , Chin-Chou Liu , Yi-Kan Cheng
IPC: H01L23/64 , H01L23/498 , H01L23/14 , H01L23/00 , H01L25/065 , G06F30/36 , G06F111/20 , G06F119/06
Abstract: An interposer includes one or more capacitors to store charge to provide signals to an integrated circuit electrically connected to the interposer. First connectors to each capacitor are interspersed with second connectors to the capacitors and are spaced apart from adjacent second connectors. The one or more capacitors and the resistances associated with the conductive paths between each capacitor and a connector or another capacitor can be modeled.
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公开(公告)号:US11132488B2
公开(公告)日:2021-09-28
申请号:US16776135
申请日:2020-01-29
Inventor: Sheng-Hsiung Chen , Jyun-Hao Chang , Ting-Wei Chiang , Fong-Yuan Chang , I-Lun Tseng , Po-Hsiang Huang
IPC: G06F30/394
Abstract: A method of modifying a cell includes determining a number of pins in a maximum overlapped pin group region. The method further includes determining a number of routing tracks within a span region of the maximum overlapped pin group region. The method further includes comparing the number of pins and the number of routing tracks within the span region to determine a global tolerance of the cell. The method further includes increasing a length of at least one pin of the maximum overlapped pin group in response to the global tolerance failing to satisfy a predetermined threshold.
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公开(公告)号:US10797041B2
公开(公告)日:2020-10-06
申请号:US16205014
申请日:2018-11-29
Inventor: Fong-Yuan Chang , Jyun-Hao Chang , Sheng-Hsiung Chen , Po-Hsiang Huang , Lipen Yuan
IPC: H01L27/02 , G06F30/392 , G06F30/394 , H01L23/522 , H01L23/528 , H01L27/118
Abstract: An integrated circuit includes a first region and a first conductive structure in the first region, wherein the first conductive structure extends in a first direction. The integrated circuit further includes a first via coupled to the first conductive structure. The integrated circuit further includes a second region adjacent to the first region. The integrated circuit further includes a power structure configured to supply a voltage to the first or second region. The power structure includes a second conductive structure extending in the first direction and overlapping a boundary between the first region and the second region. The first conductive structure and the second conductive structure are aligned in a second direction. The first conductive structure and the second conductive structure are separated from each other in the first direction by a distance greater than a minimum spacing requirement of the first conductive structure and the second conductive structure.
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公开(公告)号:US10776557B2
公开(公告)日:2020-09-15
申请号:US16205039
申请日:2018-11-29
Inventor: Po-Hsiang Huang , Sheng-Hsiung Chen , Fong-Yuan Chang
IPC: G06F30/398 , H01L27/02 , G03F1/36 , H01L27/118 , G06F30/392 , G06F30/394 , G06F111/04 , G06F119/18
Abstract: A semiconductor structure includes first and second device regions. The first device region contains an entirety of a first active area of a first logic device, the second device region contains an entirety of a second active area of a second logic device, and the second device region shares a boundary with the first device region. The semiconductor structure also includes a first metal zero pin positioned partially within the first device region, partially within the second device region, and extending across the boundary, and a via contacting the first metal zero pin. A distance from the center of the via to the boundary is less than or equal to a first predetermined distance, and the via is electrically connected to one of the first logic device or the second logic device.
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公开(公告)号:US12079561B2
公开(公告)日:2024-09-03
申请号:US18362902
申请日:2023-07-31
Inventor: Fong-Yuan Chang , Chin-Chou Liu , Sheng-Hsiung Chen , Po-Hsiang Huang
IPC: G06F30/398 , G03F1/70 , G06F30/392 , G06F30/394
CPC classification number: G06F30/398 , G03F1/70 , G06F30/392 , G06F30/394
Abstract: A cell region of a semiconductor device, the cell region including: components (representing a first circuit) including alpha info conductors and dummy conductors which are substantially collinear correspondingly with reference tracks, regarding the first circuit, the alpha info conductors beipng correspondingly for one or more input and/or output signals, or one or more internal signals, and for a majority of the reference tracks, first ends correspondingly of the alpha info conductors or the dummy conductors being aligned and proximal to a first side of the cell region; a first alpha info conductor being on a first reference track and being an intra-cell conductor which does not extend beyond the first side nor a second side of the cell region; and a portion of a first beta info conductor of a second circuit (represented by components of an external cell region) being on the first reference track.
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公开(公告)号:US12014982B2
公开(公告)日:2024-06-18
申请号:US17463203
申请日:2021-08-31
Inventor: Cheng-Yu Lin , Jung-Chan Yang , Hui-Zhong Zhuang , Sheng-Hsiung Chen , Kuo-Nan Yang , Chih-Liang Chen , Lee-Chung Lu
IPC: G06F30/30 , G06F30/347 , G06F30/392 , G06F30/394 , H01L23/50 , H01L23/528 , H01L27/07 , H01L27/118 , H01L29/417 , H01L27/02
CPC classification number: H01L23/528 , G06F30/347 , G06F30/392 , G06F30/394 , H01L23/50 , H01L27/07 , H01L27/11807 , H01L29/41733 , H01L27/0207 , H01L2027/11879 , H01L2027/11881 , H01L2027/11887
Abstract: An IC device includes first and second cells adjacent each other and over a substrate. The first cell includes a first IO pattern along a first track among a plurality of tracks in a first metal layer, the plurality of tracks elongated along a first axis and spaced from each other along a second axis. The second cell includes a plurality of conductive patterns along corresponding different tracks among the plurality of tracks in the first metal layer, each of the plurality of conductive patterns being an IO pattern of the second cell or a floating conductive pattern. The first metal layer further includes a first connecting pattern along the first track and connects the first IO pattern and a second IO pattern of the second cell. The second IO pattern is one of the plurality of conductive patterns of the second cell and is along the first track.
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公开(公告)号:US20240077534A1
公开(公告)日:2024-03-07
申请号:US18150830
申请日:2023-01-06
Inventor: Johnny Chiahao Li , Sheng-Hsiung Chen , Tzu-Ying Lin , Yung-Chen Chien , Jerry Chang Jui Kao , Xiangdong Chen
IPC: G01R31/3185
CPC classification number: G01R31/318536 , G01R31/318525 , G01R31/318555
Abstract: Systems, methods, and devices are described herein for pre-setting scan flip-flops using combinational logic circuits. A system includes a plurality of flip-flop devices and a first pre-setting combinational logic circuit. The plurality of flip-flop devices are coupled together in series and configured to receive a scan input signal, capture data output from each flip-flop device of the plurality of flip-flop devices based on the scan input signal, and generate a scan output signal comprising the captured data. The first pre-setting combinational logic circuit is coupled to a first flip-flop device of the plurality of flip-flop devices. The first pre-setting combinational logic circuit includes a plurality of transistors and is configured to override and set either the scan input signal to the first flip-flop device or the scan output signal of the first flip-flop device based on selective operation of the plurality of transistors.
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