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    Memory device and manufacturing method the same
    4.
    发明授权
    Memory device and manufacturing method the same 有权
    存储器件和制造方法相同

    公开(公告)号：US08804404B2

    公开(公告)日：2014-08-12

    申请号：US14013492

    申请日：2013-08-29

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Yoshinobu Asami ,  Tamae Takano ,  Masayuki Sakakura ,  Ryoji Nomura ,  Shunpei Yamazaki

    IPC分类号： G11C11/34 ,  G11C11/00 ,  H01L29/12

    CPC分类号： H01L27/1082 ,  B82Y10/00 ,  G11C11/34 ,  G11C13/0014 ,  G11C2213/79 ,  H01L23/4828 ,  H01L27/105 ,  H01L27/1203 ,  H01L27/1244 ,  H01L27/28 ,  H01L29/458 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.

    摘要翻译： 可以在没有接触的情况下发送和接收数据的半导体器件部分地受到一些铁路通行证，电子货币卡等的普及; 然而，提供便宜的半导体器件以进一步普及是主要的任务。 鉴于上述现有条件，本发明的半导体器件包括具有用于提供便宜的半导体器件的简单结构的存储器及其制造方法。 包括在存储器中的存储元件包括含有有机化合物的层，并且将设置在存储元件部分中的TFT的源电极或漏电极用作形成存储元件的位线的导电层。

    Semiconductor device and manufacturing method of the same
    5.
    发明授权
    Semiconductor device and manufacturing method of the same 有权

    公开(公告)号：US09373723B2

    公开(公告)日：2016-06-21

    申请号：US14336153

    申请日：2014-07-21

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： Tamae Takano ,  Atsuo Isobe

    IPC分类号： H01L27/14 ,  H01L29/786 ,  H01L27/12 ,  H01L27/13 ,  H01L29/06

    CPC分类号： H01L29/78606 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/13 ,  H01L29/0603 ,  H01L29/78609 ,  H01L29/78636

    摘要： The present invention provides a semiconductor device which suppresses a short circuit and a leakage current between a semiconductor film and a gate electrode generated by a break or thin thickness of a gate insulating film in an end portion of a channel region of the semiconductor film, and the manufacturing method of the semiconductor device. Plural thin film transistors which each have semiconductor film provided over a substrate continuously, conductive films provided over the semiconductor film through a gate insulating film, source and drain regions provided in the semiconductor film which are not overlapped with the conductive films, and channel regions provided in the semiconductor film existing under the conductive films and between the source and drain regions. And impurity regions provided in the semiconductor film which is not overlapped with the conductive film and provided adjacent to the source and drain regions. Further, the conductive films are provided over the channel regions and regions of the semiconductor film which are provided adjacent to the channel regions.