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1.
公开(公告)号:US11824967B2
公开(公告)日:2023-11-21
申请号:US17347055
申请日:2021-06-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Ju-Young Jung , Jiyoup Kim , Changkyu Seol , Pilsang Yoon , Jinsoo Lim , Myunghoon Choi
CPC classification number: H04L9/008 , H04L9/0819 , H04L9/0869 , H04L9/0894
Abstract: An electronic device includes a memory storing data from an external source, an application processing unit (APU) transmitting a secret key and public key generation command, an isolated execution environment (IEE) generating a secret key in response to the secret key generation command, generating a public key based on the secret key in response to the public key generation command, and storing the secret key, and a non-volatile memory performing write and read operations depending on a request of the APU. When the data are stored in the memory, the APU transmits a public key request to the IEE and in response the IEE transfers the public key to the APU through a mailbox protocol. The APU generates a ciphertext by performing homomorphic encryption on the data based on an encryption key in the public key, and classifies and stores the public key and the ciphertext in the non-volatile memory.
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公开(公告)号:US11150987B2
公开(公告)日:2021-10-19
申请号:US16891517
申请日:2020-06-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Changkyu Seol , Hyejeong So , Kwanwoo Noh , Hongrak Son , Pilsang Yoon
Abstract: Channel selection information indicate positions of data bits of input data, positions of error correction code (ECC) parity bits for correcting errors in the input data, and positions of state shaping parity bits. The ECC parity bits and the state shaping parity bits are generated to cause a decrease in a quantity of memory cells, of the plurality of memory cells, in which at least one target state among a plurality of states is programmed. An alignment vector is generated based on aligning the data bits of the input data, the ECC parity bits, and the state shaping parity bits, based on the channel selection information. A codeword is generated based on simultaneously performing state shaping and ECC encoding with respect to the alignment vector. Write data are written in the nonvolatile memory device based on the codeword.
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公开(公告)号:US10134476B2
公开(公告)日:2018-11-20
申请号:US15857898
申请日:2017-12-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Dongsup Jin , Pilsang Yoon , Hong Rak Son , Junjin Kong , Young-Seop Shim , Jinman Han
IPC: G11C7/00 , G11C16/26 , G06F3/06 , G11C16/04 , G11C7/02 , G11C16/28 , G11C29/02 , G11C29/50 , G11C11/56 , G11C29/04
Abstract: A method for controlling a nonvolatile memory device includes requesting a plurality of first sampling values from the nonvolatile memory device, each of the first sampling values representing the number of memory cells having a threshold voltage between a first sampling read voltage and a second sampling read voltage. The first sampling values are processed through a non-linear filtering operation to estimate the number of memory cells having the threshold voltage between the first sampling read voltage and the second sampling read voltage.
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公开(公告)号:US11757567B2
公开(公告)日:2023-09-12
申请号:US17590474
申请日:2022-02-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Changkyu Seol , Jiyoup Kim , Hyejeong So , Myoungbo Kwak , Pilsang Yoon , Sucheol Lee , Jinsoo Lim , Youngdon Choi
CPC classification number: H04L1/0041 , G06F1/03 , H04L1/0045 , H04L1/0057 , H04L1/0084
Abstract: Provided is a device and method for encoding and decoding to implement maximum transition avoidance coding with minimum overhead. An exemplary device performs encoding and/or decoding, by using sub-block lookup tables representing correlations between some bit values in a data burst and symbols, a combining lookup table selectively interconnecting the sub-block lookup tables based on remaining bit values of the data burst, and a codeword decoding lookup table designating the sub-block lookup tables corresponding to the symbols of each of received codewords.
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公开(公告)号:US20210132832A1
公开(公告)日:2021-05-06
申请号:US16828170
申请日:2020-03-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyejeong So , Changkyu Seol , Hong Rak Son , Pilsang Yoon , Jinsoo Lim , Jae Hun Jang , Seonghyeong Choi
Abstract: A storage device is provided including a memory controller having a neural processing unit (NPU); a first nonvolatile memory (NVM) connected to the memory controller through a first channel; and a second NVM connected to the memory controller through a second channel. The first NVM stores first weight data for the NPU and the second stores second weight data for the NPU. The memory controller is configured to determine one of the first and second channels that is less frequently accessed upon receiving an inference request from the neural processor, and access a corresponding one of the first weight data and the second weight data using the determined one channel.
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公开(公告)号:US12052032B2
公开(公告)日:2024-07-30
申请号:US18055867
申请日:2022-11-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jinsoo Lim , Changkyu Seol , Myoungbo Kwak , Pilsang Yoon
CPC classification number: H03M13/09 , H03M13/1125 , H03M13/45
Abstract: Disclosed is an electronic device, which includes an ECC decoder that performs ECC decoding on a flit including a plurality of PAM-4 symbols for each of a plurality of ECC groups, a CRC decoder that performs CRC decoding on the ECC decoded flit to obtain data, and an erasure decoding unit that calculates an LLR for each of the PAM-4 symbols when the CRC decoding fails, extracts an error symbol candidate from among the plurality of PAM-4 symbols for each of the plurality of ECC groups based on the LLR, and performs the ECC decoding again after erasing the error symbol candidate.
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公开(公告)号:US20230396268A1
公开(公告)日:2023-12-07
申请号:US18055867
申请日:2022-11-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jinsoo Lim , Changkyu Seol , Myoungbo Kwak , Pilsang Yoon
CPC classification number: H03M13/09 , H03M13/1125 , H03M13/45
Abstract: Disclosed is an electronic device, which includes an ECC decoder that performs ECC decoding on a flit including a plurality of PAM-4 symbols for each of a plurality of ECC groups, a CRC decoder that performs CRC decoding on the ECC decoded flit to obtain data, and an erasure decoding unit that calculates an LLR for each of the PAM-4 symbols when the CRC decoding fails, extracts an error symbol candidate from among the plurality of PAM-4 symbols for each of the plurality of ECC groups based on the LLR, and performs the ECC decoding again after erasing the error symbol candidate.
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公开(公告)号:US11531871B2
公开(公告)日:2022-12-20
申请号:US16854942
申请日:2020-04-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jaehun Jang , Hongrak Son , Changkyu Seol , Geunyeong Yu , Chanho Yoon , Pilsang Yoon
IPC: G06N3/04 , H01L25/18 , G06N3/063 , H01L25/065
Abstract: A stacked neuromorphic device includes a logic die including a control circuit and configured to communicate with a host, and core dies stacked on the logic die and connected to the logic die via through silicon vias (TSVs) extending through the core dies. The core dies include a neuromorphic core die including a synapse array connected to row lines and column lines. The synapse array includes synapses configured to store weights and perform a calculation based on the weights and input data. The weights are included in layers of a neural network system. And the control circuit provides the weights to the neuromorphic core die through the TSVs and controls data transmission by the neuromorphic core die.
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公开(公告)号:US10607708B2
公开(公告)日:2020-03-31
申请号:US16539290
申请日:2019-08-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Eun Chu Oh , Pilsang Yoon , Jun Jin Kong , Jisu Kim , Hong Rak Son , Jinbae Bang , Daeseok Byeon , Taehyun Song , Dongjin Shin , Dongsup Jin
Abstract: An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.
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10.
公开(公告)号:US09672105B2
公开(公告)日:2017-06-06
申请号:US14641649
申请日:2015-03-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jung Soo Chung , Jun Jin Kong , Hongrak Son , Pilsang Yoon , Seong Hyeog Choi
CPC classification number: G06F11/1072 , G06F11/1012 , G06F11/1451 , G06F2201/84 , G11C2029/0411 , H04L9/0662 , H04L9/0869 , H04L9/0894
Abstract: A method of operating a data storage device includes generating at least one pseudo noise (PN) sequence using logical information and physical information for the data storage device. The method also includes converting first data into second data using the at least one PN sequence. The logical information may be a logical address for the data storage device, and the physical information may be a physical address for the data storage device.
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