公开(公告)号：US10607708B2

公开(公告)日：2020-03-31

申请号：US16539290

申请日：2019-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Chu Oh ,  Pilsang Yoon ,  Jun Jin Kong ,  Jisu Kim ,  Hong Rak Son ,  Jinbae Bang ,  Daeseok Byeon ,  Taehyun Song ,  Dongjin Shin ,  Dongsup Jin

IPC: G11C16/28 ,  G11C29/02 ,  G11C16/04 ,  G11C29/50 ,  G11C16/26 ,  G11C16/34 ,  G11C11/56 ,  G11C16/10

Abstract: An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.

公开(公告)号：US10381090B2

公开(公告)日：2019-08-13

申请号：US16003729

申请日：2018-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Chu Oh ,  Pilsang Yoon ,  Jun Jin Kong ,  Jisu Kim ,  Hong Rak Son ,  Jinbae Bang ,  Daeseok Byeon ,  Taehyun Song ,  Dongjin Shin ,  Dongsup Jin

IPC: G11C16/28 ,  G11C16/04 ,  G11C16/10 ,  G11C11/56 ,  G11C16/34 ,  G11C16/26 ,  G11C29/50 ,  G11C29/02

Abstract: An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.

公开(公告)号：US12245392B2

公开(公告)日：2025-03-04

申请号：US17678915

申请日：2022-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeamoon Jung ,  Jayeun Ko ,  Hokyung Moon ,  Taehyun Song

IPC: H05K5/03 ,  B32B15/08 ,  B32B15/10 ,  B32B27/08 ,  B32B27/12 ,  C08J7/04 ,  H04M1/02

Abstract: Disclosed is an electronic device including a cover defining a portion of an external appearance of the electronic device, a film layer attached to a first surface of the cover, at least one UV molding pattern layer disposed on the film layer, wherein the at least one UV molding pattern layer includes a first area, and a second area that is different from the first area, a thermally cured printing layer disposed on the first area of the at least one UV molding pattern layer, and a deposition layer including a first part disposed to overlap the first area of the at least one UV molding pattern layer, and a second part disposed in the second area of the at least one UV molding pattern layer.

公开(公告)号：US11189358B2

公开(公告)日：2021-11-30

申请号：US16919187

申请日：2020-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seonghyeog Choi ,  Hongrak Son ,  Taehyun Song ,  Hyunsang Cho

IPC: G11C29/42 ,  G11C29/44 ,  G11C29/50 ,  G06N20/20 ,  G06N5/04 ,  G06K9/62

Abstract: According to a method of controlling an operation of a nonvolatile memory device using machine learning, operating conditions of the nonvolatile memory device are determined by performing an inferring operation using a machine learning model. Training data that are generated based on feature information and error information are collected, where the error information indicate results of error correction code (ECC) decoding of the nonvolatile memory device. The machine learning model is updated by performing a learning operation based on the training data. Optimized operating conditions for individual user environments are provided by collecting training data in the storage system and performing the learning operation and the inferring operation based on the training data.

公开(公告)号：US11361832B2

公开(公告)日：2022-06-14

申请号：US16990262

申请日：2020-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunseung Han ,  Seonghyeog Choi ,  Youngsuk Ra ,  Hong Rak Son ,  Taehyun Song ,  Bohwan Jun

IPC: H03M13/29 ,  G06F11/10 ,  G11C16/26 ,  H03M13/11 ,  G06F3/06 ,  G11C16/10 ,  G11C16/04 ,  G11C16/08

Abstract: A storage device includes a nonvolatile memory device and a memory controller. The memory controller receives first data from the nonvolatile memory device based on a first read command, and performs error correction on the first data. When the error correction fails, the memory controller transmits a second read command and second read voltage information to the nonvolatile memory device, receives second data from the nonvolatile memory device, transmits a third read command and third read voltage information to the nonvolatile memory device, and receives third data from the nonvolatile memory device. The memory controller adjusts an offset based on the second data and the third data, transmits a fourth read command, fourth read voltage information, and the offset to the nonvolatile memory device, receives fourth data from the nonvolatile memory device, and performs a soft decision process based on the fourth data.