公开(公告)号：US12019871B2

公开(公告)日：2024-06-25

申请号：US17865621

申请日：2022-07-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngsuk Ra ,  Hanbyeul Na ,  Kwanwoo Noh ,  Mankeun Seo ,  Hong Rak Son ,  Jae Hun Jang

IPC: G06F3/06

CPC classification number: G06F3/0608 ,  G06F3/0655 ,  G06F3/0679

Abstract: A method of operating a storage controller includes receiving raw data indicating a series of bits each corresponding to one of threshold voltage states, performing a first state shaping for reducing a number of first target bits of the series of bits, logical values of the first target bits being equal to a logical value of a target threshold voltage state of the threshold voltage states in a first page of plural pages, generating first indicator data that indicates the first target bits based on the first state shaping, compressing the first indicator data, and storing the compressed first indicator data.

公开(公告)号：US11361832B2

公开(公告)日：2022-06-14

申请号：US16990262

申请日：2020-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunseung Han ,  Seonghyeog Choi ,  Youngsuk Ra ,  Hong Rak Son ,  Taehyun Song ,  Bohwan Jun

IPC: H03M13/29 ,  G06F11/10 ,  G11C16/26 ,  H03M13/11 ,  G06F3/06 ,  G11C16/10 ,  G11C16/04 ,  G11C16/08

Abstract: A storage device includes a nonvolatile memory device and a memory controller. The memory controller receives first data from the nonvolatile memory device based on a first read command, and performs error correction on the first data. When the error correction fails, the memory controller transmits a second read command and second read voltage information to the nonvolatile memory device, receives second data from the nonvolatile memory device, transmits a third read command and third read voltage information to the nonvolatile memory device, and receives third data from the nonvolatile memory device. The memory controller adjusts an offset based on the second data and the third data, transmits a fourth read command, fourth read voltage information, and the offset to the nonvolatile memory device, receives fourth data from the nonvolatile memory device, and performs a soft decision process based on the fourth data.

公开(公告)号：US09766973B2

公开(公告)日：2017-09-19

申请号：US14713568

申请日：2015-05-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seonghyeog Choi ,  Changkyu Seol ,  Junjin Kong ,  Youngsuk Ra ,  Hong Rak Son

IPC: G11C5/14 ,  G11C11/56 ,  G11C16/26 ,  G06F11/10 ,  G11C29/02 ,  G11C29/26 ,  G11C29/04

CPC classification number: G06F11/1048 ,  G11C11/5642 ,  G11C29/021 ,  G11C29/028 ,  G11C29/26 ,  G11C2029/0411

Abstract: A default read operation is performed on a page using a default read voltage set to generate default raw data. If error bits of the default raw data are not corrected, a plurality of low-level read operations is performed on the page using a plurality of read voltage sets to generate a plurality of low-level raw data. Each read voltage set is different from the default voltage set. A read voltage set is selected from the plurality of read voltage sets as a starting voltage set, according to each low-level raw data. A high-level read operation using the selected starting voltage set is performed on the page to generate high-level raw data.