公开(公告)号：US10607708B2

公开(公告)日：2020-03-31

申请号：US16539290

申请日：2019-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Chu Oh ,  Pilsang Yoon ,  Jun Jin Kong ,  Jisu Kim ,  Hong Rak Son ,  Jinbae Bang ,  Daeseok Byeon ,  Taehyun Song ,  Dongjin Shin ,  Dongsup Jin

IPC: G11C16/28 ,  G11C29/02 ,  G11C16/04 ,  G11C29/50 ,  G11C16/26 ,  G11C16/34 ,  G11C11/56 ,  G11C16/10

Abstract: An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.

公开(公告)号：US10381090B2

公开(公告)日：2019-08-13

申请号：US16003729

申请日：2018-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Chu Oh ,  Pilsang Yoon ,  Jun Jin Kong ,  Jisu Kim ,  Hong Rak Son ,  Jinbae Bang ,  Daeseok Byeon ,  Taehyun Song ,  Dongjin Shin ,  Dongsup Jin

IPC: G11C16/28 ,  G11C16/04 ,  G11C16/10 ,  G11C11/56 ,  G11C16/34 ,  G11C16/26 ,  G11C29/50 ,  G11C29/02

Abstract: An method of operating a nonvolatile memory device including a plurality of memory cells comprises receiving a read command from an external device, in response to the read command, performing, based on a reference voltage, a first cell counting operation with respect to the plurality of memory cells, adjusting at least one read voltage of first through nth read voltages (where n is a natural number greater than 1) based on a first result of the first cell counting operation, and performing, based on the adjusted at least one read voltage, a read operation corresponding to the read command with respect to the plurality of memory cells.

公开(公告)号：US10134476B2

公开(公告)日：2018-11-20

申请号：US15857898

申请日：2017-12-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongsup Jin ,  Pilsang Yoon ,  Hong Rak Son ,  Junjin Kong ,  Young-Seop Shim ,  Jinman Han

IPC: G11C7/00 ,  G11C16/26 ,  G06F3/06 ,  G11C16/04 ,  G11C7/02 ,  G11C16/28 ,  G11C29/02 ,  G11C29/50 ,  G11C11/56 ,  G11C29/04

Abstract: A method for controlling a nonvolatile memory device includes requesting a plurality of first sampling values from the nonvolatile memory device, each of the first sampling values representing the number of memory cells having a threshold voltage between a first sampling read voltage and a second sampling read voltage. The first sampling values are processed through a non-linear filtering operation to estimate the number of memory cells having the threshold voltage between the first sampling read voltage and the second sampling read voltage.