公开(公告)号：US10141407B2

公开(公告)日：2018-11-27

申请号：US14506041

申请日：2014-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： David Seo ,  Ho-jung Kim ,  In-kyeong Yoo ,  Myoung-jae Lee ,  Seong-ho Cho

IPC: H01L27/108 ,  H01L29/66 ,  H01L45/00 ,  H01L29/16 ,  H01L29/68 ,  H01L27/105 ,  H01L29/76

Abstract: According to example embodiments, a graphene device includes a first electrode, a first insulation layer on the first electrode, an information storage layer on the first insulation layer, a second insulation layer on the information storage layer, a graphene layer on the second insulation layer, a third insulation layer on a first region of the graphene layer, a second electrode on the third insulation layer, and a third electrode on a second region of the graphene layer.

公开(公告)号：US09379319B2

公开(公告)日：2016-06-28

申请号：US14444083

申请日：2014-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoung-jae Lee ,  Seong-ho Cho ,  Ho-jung Kim ,  Young-soo Park ,  David Seo ,  In-kyeong Yoo

IPC: H01L29/02 ,  H01L45/00 ,  H01L29/40 ,  H01L29/51 ,  H01L29/78 ,  G06N3/04 ,  G06N3/063 ,  G11C11/54 ,  G11C11/56 ,  G11C13/00

CPC classification number: H01L29/788 ,  G06N3/049 ,  G06N3/063 ,  G11C11/54 ,  G11C11/5685 ,  G11C13/0007 ,  G11C14/0063 ,  G11C16/0433 ,  G11C2213/15 ,  G11C2213/53 ,  H01L27/11521 ,  H01L28/00 ,  H01L29/408 ,  H01L29/42324 ,  H01L29/51 ,  H01L29/512 ,  H01L29/517 ,  H01L29/685 ,  H01L29/78 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/147

Abstract: Provided are nonvolatile memory transistors and devices including the nonvolatile memory transistors. A nonvolatile memory transistor may include a channel element, a gate electrode corresponding to the channel element, a gate insulation layer between the channel element and the gate electrode, an ionic species moving layer between the gate insulation layer and the gate electrode, and a source and a drain separated from each other with respect to the channel element. A motion of an ionic species at the ionic species moving layer occurs according to a voltage applied to the gate electrode. A threshold voltage changes according to the motion of the ionic species. The nonvolatile memory transistor has a multi-level characteristic.

Abstract translation: 提供了非易失性存储晶体管和包括非易失性存储晶体管的器件。 非易失性存储晶体管可以包括沟道元件，对应于沟道元件的栅极电极，沟道元件和栅电极之间的栅极绝缘层，栅极绝缘层和栅电极之间的离子物质移动层，以及源极 以及相对于沟道元件彼此分离的漏极。 根据施加到栅电极的电压，发生离子物质移动层处的离子物质的运动。 阈值电压根据离子物质的运动而变化。 非易失性存储晶体管具有多电平特性。

公开(公告)号：US20160268418A1

公开(公告)日：2016-09-15

申请号：US15165372

申请日：2016-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoung-jae Lee ,  Seong-ho Cho ,  Ho-jung Kim ,  Young-soo Park ,  David Seo ,  In-kyeong Yoo

IPC: H01L29/788 ,  G11C16/04 ,  H01L27/115 ,  G11C14/00 ,  H01L29/423 ,  H01L29/51

CPC classification number: H01L29/788 ,  G06N3/049 ,  G06N3/063 ,  G11C11/54 ,  G11C11/5685 ,  G11C13/0007 ,  G11C14/0063 ,  G11C16/0433 ,  G11C2213/15 ,  G11C2213/53 ,  H01L27/11521 ,  H01L28/00 ,  H01L29/408 ,  H01L29/42324 ,  H01L29/51 ,  H01L29/512 ,  H01L29/517 ,  H01L29/685 ,  H01L29/78 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/147

Abstract: Provided are nonvolatile memory transistors and devices including the nonvolatile memory transistors. A nonvolatile memory transistor may include a channel element, a gate electrode corresponding to the channel element, a gate insulation layer between the channel element and the gate electrode, an ionic species moving layer between the gate insulation layer and the gate electrode, and a source and a drain separated from each other with respect to the channel element. A motion of an ionic species at the ionic species moving layer occurs according to a voltage applied to the gate electrode. A threshold voltage changes according to the motion of the ionic species. The nonvolatile memory transistor has a multi-level characteristic.

公开(公告)号：US09441822B2

公开(公告)日：2016-09-13

申请号：US13924944

申请日：2013-06-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-jung Kim ,  In-kyeong Yoo ,  U-in Chung ,  I-hun Song ,  Seung-eon Ahn

IPC: B43K29/10 ,  F21V23/00 ,  G06F3/0354

CPC classification number: F21V23/009 ,  G06F3/03545

Abstract: A color optical pen includes a tip unit, a pen body unit attached to the tip unit; a pressure sensor that is disposed in the tip unit and configured to sense at least contact between a display unit of a terminal device and the tip unit; a light source that is disposed in the pen body unit and is configured to output light through the tip unit, if the pressure sensor senses the contact; a color selection switch that is disposed on the pen body, the color selection switch configured to select a color in response to operation by a user; and a driver configured to drive the light source at a frequency or pattern based on operation of the color selection switch.

Abstract translation: 彩色光笔包括尖端单元，附接到尖端单元的笔体单元; 压力传感器，其布置在所述尖端单元中并且构造成感测终端装置的显示单元和所述尖端单元之间的至少接触; 光源，其设置在所述笔体单元中，并且被配置为如果所述压力传感器感测到所述接触，则通过所述尖端单元输出光; 布置在笔体上的颜色选择开关，所述颜色选择开关被配置为响应于用户的操作来选择颜色; 以及配置为基于颜色选择开关的操作以频率或图案驱动光源的驱动器。

公开(公告)号：US09373685B2

公开(公告)日：2016-06-21

申请号：US14180928

申请日：2014-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon-jin Shin ,  Kyung-eun Byun ,  Hyun-jae Song ,  Seong-jun Park ,  David Seo ,  Yun-sung Woo ,  Dong-wook Lee ,  Jae-ho Lee ,  Hyun-jong Chung ,  Jin-seong Heo ,  In-kyeong Yoo

IPC: H01L29/78 ,  H01L29/16 ,  H01L51/00 ,  H01L51/42 ,  H01L51/50 ,  H01L51/05 ,  H01L29/786 ,  H01L31/028 ,  H01L33/34 ,  H01L31/08

CPC classification number: H01L29/1606 ,  H01L29/786 ,  H01L29/78642 ,  H01L29/78684 ,  H01L31/028 ,  H01L31/08 ,  H01L33/34 ,  H01L51/0046 ,  H01L51/0504 ,  H01L51/0558 ,  H01L51/0562 ,  H01L51/0566 ,  H01L51/057 ,  H01L51/428 ,  H01L51/50

Abstract: A graphene device and an electronic apparatus including the same are provided. According to example embodiments, the graphene device includes a transistor including a source, a gate, and a drain, an active layer through which carriers move, and a graphene layer between the gate and the active layer. The graphene layer may be configured to function both as an electrode of the active layer and a channel layer of the transistor.

Abstract translation: 提供了石墨烯装置和包括该石墨烯装置的电子装置。 根据示例性实施例，石墨烯装置包括晶体管，其包括源极，栅极和漏极，载流子移动的有源层以及栅极和有源层之间的石墨烯层。 石墨烯层可以被配置为既用作有源层的电极和晶体管的沟道层。

公开(公告)号：US09312368B2

公开(公告)日：2016-04-12

申请号：US14334028

申请日：2014-07-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-ho Lee ,  Kyung-eun Byun ,  Hyun-jae Song ,  Hyeon-jin Shin ,  Min-Hyun Lee ,  In-kyeong Yoo ,  Seong-jun Park

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/16 ,  H01L29/165 ,  H01L29/267

CPC classification number: H01L29/66977 ,  H01L21/76224 ,  H01L21/764 ,  H01L29/0649 ,  H01L29/1606 ,  H01L29/165 ,  H01L29/267 ,  H01L29/42364 ,  H01L29/66045 ,  H01L29/778 ,  H01L29/78

Abstract: A graphene device including separated junction contacts and a method of manufacturing the same are disclosed. The graphene device is a field effect transistor (FET) in which graphene is used as a channel. A source electrode and a drain electrode do not directly contact the graphene channel, and junction contacts formed by doping semiconductor are separately disposed between the graphene channel and the source electrode and between the graphene channel and the drain electrode. Therefore, in an off state where a voltage is not applied to a gate electrode, due to a barrier between the graphene channel and the junction contacts, carriers may not move. As a result, the graphene device may have low current in the off state.

Abstract translation: 公开了一种包括分离的接点的石墨烯器件及其制造方法。 石墨烯装置是其中使用石墨烯作为通道的场效应晶体管（FET）。 源电极和漏电极不直接接触石墨烯通道，并且由掺杂半导体形成的结接点分别设置在石墨烯通道和源电极之间以及石墨烯通道和漏电极之间。 因此，在由于石墨烯通道和接合点之间的阻挡而不向栅电极施加电压的关闭状态下，载体可能不移动。 结果，石墨烯器件在断开状态下可能具有低电流。