公开(公告)号：US09525076B2

公开(公告)日：2016-12-20

申请号：US13960256

申请日：2013-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-ho Lee ,  Hyun-jong Chung ,  Seong-jun Park ,  Kyung-eun Byun ,  David Seo ,  Hyun-jae Song ,  Jin-seong Heo

IPC: H01L29/792 ,  B82Y10/00 ,  H01L21/28 ,  H01L29/47 ,  H01L29/788 ,  H01L29/16 ,  G11C11/40 ,  H01L29/778 ,  G11C16/04 ,  H01L51/05

CPC classification number: H01L29/792 ,  B82Y10/00 ,  G11C11/40 ,  G11C16/0466 ,  H01L21/28273 ,  H01L29/1606 ,  H01L29/47 ,  H01L29/7781 ,  H01L29/788 ,  H01L51/0512 ,  Y10S977/734 ,  Y10S977/938

Abstract: A graphene memory includes a source and a drain spaced apart from each other on a conductive semiconductor substrate, a graphene layer contacting the conductive semiconductor substrate and spaced apart from and between the source and the drain, and a gate electrode on the graphene layer. A Schottky barrier is formed between the conductive semiconductor substrate and the graphene layer such that the graphene layer is used as a charge-trap layer for storing charges.

Abstract translation: 石墨烯存储器包括在导电半导体衬底上彼此间隔开的源极和漏极，与导电半导体衬底接触并与源极和漏极间隔开并且在源极和漏极之间以及在石墨烯层上的栅电极的石墨烯层。 在导电半导体衬底和石墨烯层之间形成肖特基势垒，使得石墨烯层用作用于存储电荷的电荷捕获层。

公开(公告)号：US09455256B2

公开(公告)日：2016-09-27

申请号：US14265769

申请日：2014-04-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-seong Heo ,  Seong-jun Park ,  Hyeon-jin Shin

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/51 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/267 ,  H01L29/778 ,  H01L29/24 ,  H01L29/16

CPC classification number: H01L27/0922 ,  H01L21/823807 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/242 ,  H01L29/267 ,  H01L29/518 ,  H01L29/66045 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/7827

Abstract: Inverters including two-dimensional (2D) material, methods of manufacturing the same, and logic devices including the inverters. An inverter may include a first transistor and a second transistor that are connected to each other, and the first and second transistor layers may include 2D materials. The first transistor may include a first graphene layer and a first 2D semiconductor layer contacting the first graphene layer, and the second transistor may include a second graphene layer and a second 2D semiconductor layer contacting the second graphene layer. The first 2D semiconductor layer may be a p-type semiconductor, and the second 2D semiconductor layer may be an n-type semiconductor. The first 2D semiconductor layer may be arranged at a lateral side of the second 2D semiconductor layer.

Abstract translation: 包括二维（2D）材料的逆变器，其制造方法以及包括逆变器的逻辑器件。 反相器可以包括彼此连接的第一晶体管和第二晶体管，并且第一和第二晶体管层可以包括2D材料。 第一晶体管可以包括第一石墨烯层和与第一石墨烯层接触的第一2D半导体层，并且第二晶体管可以包括第二石墨烯层和与第二石墨烯层接触的第二2D半导体层。 第一2D半导体层可以是p型半导体，第二2D半导体层可以是n型半导体。 第一2D半导体层可以布置在第二2D半导体层的侧面。

公开(公告)号：US09306005B2

公开(公告)日：2016-04-05

申请号：US14103079

申请日：2013-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-eun Byun ,  Seong-jun Park ,  David Seo ,  Hyun-jae Song ,  Jae-ho Lee ,  Hyun-jong Chung ,  Jin-seong Heo

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/45 ,  H01L29/739 ,  H01L29/786 ,  H01L29/78 ,  H01L29/10

CPC classification number: H01L29/1606 ,  H01L29/1087 ,  H01L29/45 ,  H01L29/452 ,  H01L29/456 ,  H01L29/458 ,  H01L29/7391 ,  H01L29/78 ,  H01L29/78618

Abstract: According to example embodiments, an electronic device includes: a semiconductor layer; a graphene directly contacting a desired (and/or alternatively predetermined) area of the semiconductor layer; and a metal layer on the graphene. The desired (and/or alternatively predetermined) area of the semiconductor layer include one of: a constant doping density, a doping density that is equal to or less than 1019 cm−3, and a depletion width of less than or equal to 3 nm.

Abstract translation: 根据示例性实施例，电子设备包括：半导体层; 直接接触所述半导体层的期望（和/或备选地预定）区域的石墨烯; 和石墨烯上的金属层。 半导体层的期望（和/或备选地）预定区域包括以下之一：恒定的掺杂密度，等于或小于1019cm-3的掺杂密度以及小于或等于3nm的耗尽宽度 。

公开(公告)号：US09053932B2

公开(公告)日：2015-06-09

申请号：US13917786

申请日：2013-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Wook Lee ,  Hyeon-jin Shin ,  Seong-jun Park ,  Kyung-eun Byun ,  David Seo ,  Hyun-jae Song ,  Yun-sung Woo ,  Jae-ho Lee ,  Hyun-jong Chung ,  Jin-seong Heo

IPC: H01L21/20 ,  H01L21/36 ,  C01B31/04 ,  H01L21/02 ,  H01L29/16

CPC classification number: H01L21/02527 ,  H01L21/0242 ,  H01L21/02529 ,  H01L21/02612 ,  H01L21/02656 ,  H01L29/1606

Abstract: A method of preparing graphene includes forming a silicon carbide thin film on a substrate, forming a metal thin film on the silicon carbide thin film, and forming a metal composite layer and graphene on the substrate by heating the silicon carbide thin film and the metal thin film.

Abstract translation: 制备石墨烯的方法包括在基板上形成碳化硅薄膜，在碳化硅薄膜上形成金属薄膜，通过加热碳化硅薄膜和金属薄膜，在基板上形成金属复合层和石墨烯 电影。

公开(公告)号：US08999201B2

公开(公告)日：2015-04-07

申请号：US14162397

申请日：2014-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-hoon Lee ,  Sun-ae Seo ,  Yun-sung Woo ,  Hyun-jong Chung ,  Jin-seong Heo

IPC: H01L29/16 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/04 ,  H01L29/778 ,  H01L29/786

CPC classification number: H01L29/1606 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  H01L29/7781 ,  H01L29/78684

Abstract: Graphene, a method of fabricating the same, and a transistor having the graphene are provided, the graphene includes a structure of carbon (C) atoms partially substituted with boron (B) atoms and nitrogen (N) atoms. The graphene has a band gap. The graphene substituted with boron and nitrogen may be used as a channel of a field effect transistor. The graphene may be formed by performing chemical vapor deposition (CVD) method using borazine or ammonia borane as a boron nitride (B-N) precursor.

Abstract translation: 提供石墨烯，其制造方法和具有石墨烯的晶体管，石墨烯包括部分被硼（B）原子和氮（N）原子取代的碳（C）原子的结构。 石墨烯具有带隙。 用硼和氮取代的石墨烯可以用作场效应晶体管的通道。 可以通过使用环硼氮烷或氨硼烷作为氮化硼（B-N）前体进行化学气相沉积（CVD）方法来形成石墨烯。

公开(公告)号：US08884345B2

公开(公告)日：2014-11-11

申请号：US14035305

申请日：2013-09-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-seong Heo ,  Hyun-jong Chung ,  Sun-ae Seo ,  Sung-hoon Lee ,  Hee-jun Yang

IPC: H01L29/78 ,  H01L21/78 ,  H01L29/66 ,  H01L29/16 ,  H01L29/786 ,  H01L29/778

CPC classification number: H01L29/66045 ,  H01L29/1606 ,  H01L29/401 ,  H01L29/66431 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/786 ,  Y10S977/936

Abstract: The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the pair of the first metals separate from each other, a graphene channel layer extending between the first metals and on the first metals, and a source electrode and a drain electrode on both edges of the graphene channel layer.

Abstract translation: 石墨烯电子器件可以包括在导电衬底上的栅极氧化物，导电衬底被配置为用作栅电极，栅极氧化物上的一对第一金属，一对第一金属彼此分开，石墨烯沟道层 在第一金属和第一金属之间延伸，以及在石墨烯通道层的两个边缘上的源电极和漏电极。

公开(公告)号：US09105556B2

公开(公告)日：2015-08-11

申请号：US13906657

申请日：2013-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-seong Heo ,  Seong-jun Park ,  Kyung-eun Byun ,  David Seo ,  Hyun-jae Song ,  Jae-ho Lee ,  Hyun-jong Chung

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/336 ,  H01L29/16 ,  H01L29/786 ,  H01L29/08 ,  H01L29/78 ,  H01L29/739 ,  B82Y99/00

CPC classification number: H01L29/16 ,  B82Y99/00 ,  H01L29/0895 ,  H01L29/1606 ,  H01L29/7391 ,  H01L29/78 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78696

Abstract: According to example embodiments, a tunneling field-effect transistor (TFET) includes a first electrode on a substrate, a semiconductor layer on a portion of the first electrode, a graphene channel on the semiconductor layer, a second electrode on the graphene channel, a gate insulating layer on the graphene channel, and a gate electrode on the gate insulating layer. The first electrode may include a portion that is adjacent to the first area of the substrate. The semiconductor layer may be between the graphene channel and the portion of the first electrode. The graphene channel may extend beyond an edge of at least one of the semiconductor layer and the portion of the first electrode to over the first area of the substrate.

Abstract translation: 根据示例性实施例，隧道场效应晶体管（TFET）包括衬底上的第一电极，第一电极的一部分上的半导体层，半导体层上的石墨烯通道，石墨烯通道上的第二电极， 栅极绝缘层，栅极绝缘层上的栅电极。 第一电极可以包括与衬底的第一区域相邻的部分。 半导体层可以在石墨烯通道和第一电极的部分之间。 石墨烯通道可以延伸超过半导体层和第一电极的至少一个的边缘到衬底的第一区域之上。

公开(公告)号：US09048310B2

公开(公告)日：2015-06-02

申请号：US13964353

申请日：2013-08-12

Applicant: Samsung Electronics Co., Ltd. ,  Seoul National University R & DB Foundation

Inventor： Jae-ho Lee ,  Seong-jun Park ,  Kyung-eun Byun ,  David Seo ,  Hyun-jae Song ,  Hyung-cheol Shin ,  Jae-hong Lee ,  Hyun-jong Chung ,  Jin-seong Heo

IPC: H01L29/02 ,  H01L29/78

CPC classification number: H01L29/78 ,  H01L29/1606 ,  H01L29/407 ,  H01L29/66977 ,  H01L29/772 ,  H01L29/872 ,  H01L29/88

Abstract: According to example embodiments, a graphene switching devices having a tunable barrier includes a semiconductor substrate that includes a first well doped with an impurity, a first electrode on a first area of the semiconductor substrate, an insulation layer on a second area of the semiconductor substrate, a graphene layer on the insulation layer and extending onto the semiconductor substrate toward the first electrode, a second electrode on the graphene layer and insulation layer, a gate insulation layer on the graphene layer, and a gate electrode on the gate insulation layer. The first area and the second area of the semiconductor substrate may be spaced apart from each other. The graphene layer is spaced apart from the first electrode. A lower portion of the graphene layer may contact the first well. The first well is configured to form an energy barrier between the graphene layer and the first electrode.

Abstract translation: 根据示例实施例，具有可调谐屏障的石墨烯开关器件包括半导体衬底，其包括掺杂有杂质的第一阱，在半导体衬底的第一区域上的第一电极，在半导体衬底的第二区域上的绝缘层 在所述绝缘层上的石墨烯层，并且朝向所述第一电极延伸到所述半导体衬底上，所述石墨烯层和绝缘层上的第二电极，所述石墨烯层上的栅极绝缘层和所述栅极绝缘层上的栅极电极。 半导体衬底的第一区域和第二区域可以彼此间隔开。 石墨烯层与第一电极间隔开。 石墨烯层的下部可以接触第一孔。 第一阱被配置为在石墨烯层和第一电极之间形成能量势垒。

公开(公告)号：US09281404B2

公开(公告)日：2016-03-08

申请号：US13733304

申请日：2013-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-seong Heo ,  Seong-jun Park ,  Kyung-eun Byun ,  David Seo ,  Hyun-jae Song ,  Hee-jun Yang ,  Hyun-jong Chung

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/786 ,  H01L29/423

CPC classification number: H01L29/78684 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/78696

Abstract: A switching device includes a semiconductor layer, a graphene layer, a gate insulation layer, and a gate formed in a three-dimensional stacking structure between a first electrode and a second electrode formed on a substrate.

Abstract translation: 开关器件包括在第一电极和形成在衬底上的第二电极之间的三维堆叠结构中形成的半导体层，石墨烯层，栅极绝缘层和栅极。

公开(公告)号：US09257528B2

公开(公告)日：2016-02-09

申请号：US14244275

申请日：2014-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-jong Chung ,  Jin-seong Heo ,  Hee-jun Yang ,  Sun-ae Seo ,  Sung-hoon Lee

IPC: H01L29/66 ,  H01L29/423 ,  H01L29/786 ,  H01L29/775

CPC classification number: H01L29/66477 ,  H01L29/42384 ,  H01L29/775 ,  H01L29/78684

Abstract: A graphene electronic device includes a graphene channel layer on a substrate, a source electrode on an end portion of the graphene channel layer and a drain electrode on another end portion of the graphene channel layer, a gate oxide on the graphene channel layer and between the source electrode and the drain electrode, and a gate electrode on the gate oxide. The gate oxide has substantially the same shape as the graphene channel layer between the source electrode and the drain electrode.

Abstract translation: 石墨烯电子器件包括在衬底上的石墨烯通道层，石墨烯通道层的端部上的源电极和在石墨烯通道层的另一端部上的漏电极，石墨烯通道层上的栅极氧化物 源电极和漏电极，栅极氧化物上的栅电极。 栅极氧化物具有与源电极和漏电极之间的石墨烯沟道层基本相同的形状。