Invention Grant
- Patent Title: Graphene substituted with boron and nitrogen, method of fabricating the same, and transistor having the same
- Patent Title (中): 用硼和氮取代的石墨烯，其制造方法和具有其的晶体管
-
Application No.: US14162397Application Date: 2014-01-23
-
Publication No.: US08999201B2Publication Date: 2015-04-07
- Inventor: Sung-hoon Lee , Sun-ae Seo , Yun-sung Woo , Hyun-jong Chung , Jin-seong Heo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0058604 20100621
- Main IPC: H01L29/16
- IPC: H01L29/16 ; B82Y30/00 ; B82Y40/00 ; C01B31/04 ; H01L29/778 ; H01L29/786
Abstract:
Graphene, a method of fabricating the same, and a transistor having the graphene are provided, the graphene includes a structure of carbon (C) atoms partially substituted with boron (B) atoms and nitrogen (N) atoms. The graphene has a band gap. The graphene substituted with boron and nitrogen may be used as a channel of a field effect transistor. The graphene may be formed by performing chemical vapor deposition (CVD) method using borazine or ammonia borane as a boron nitride (B-N) precursor.
Public/Granted literature
Information query
IPC分类:
