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    Inverter including two-dimensional material, method of manufacturing the same and logic device including inverter
    3.
    发明授权
    Inverter including two-dimensional material, method of manufacturing the same and logic device including inverter 有权
    逆变器包括二维材料，其制造方法和逻辑器件包括逆变器

    公开(公告)号：US09455256B2

    公开(公告)日：2016-09-27

    申请号：US14265769

    申请日：2014-04-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jin-seong Heo ,  Seong-jun Park ,  Hyeon-jin Shin

    IPC: H01L27/092 ,  H01L29/66 ,  H01L29/51 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/267 ,  H01L29/778 ,  H01L29/24 ,  H01L29/16

    CPC classification number: H01L27/0922 ,  H01L21/823807 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/242 ,  H01L29/267 ,  H01L29/518 ,  H01L29/66045 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/7827

    Abstract: Inverters including two-dimensional (2D) material, methods of manufacturing the same, and logic devices including the inverters. An inverter may include a first transistor and a second transistor that are connected to each other, and the first and second transistor layers may include 2D materials. The first transistor may include a first graphene layer and a first 2D semiconductor layer contacting the first graphene layer, and the second transistor may include a second graphene layer and a second 2D semiconductor layer contacting the second graphene layer. The first 2D semiconductor layer may be a p-type semiconductor, and the second 2D semiconductor layer may be an n-type semiconductor. The first 2D semiconductor layer may be arranged at a lateral side of the second 2D semiconductor layer.

    Abstract translation: 包括二维（2D）材料的逆变器，其制造方法以及包括逆变器的逻辑器件。 反相器可以包括彼此连接的第一晶体管和第二晶体管，并且第一和第二晶体管层可以包括2D材料。 第一晶体管可以包括第一石墨烯层和与第一石墨烯层接触的第一2D半导体层，并且第二晶体管可以包括第二石墨烯层和与第二石墨烯层接触的第二2D半导体层。 第一2D半导体层可以是p型半导体，第二2D半导体层可以是n型半导体。 第一2D半导体层可以布置在第二2D半导体层的侧面。

    Memory devices including two-dimensional material, methods of manufacturing the same, and methods of operating the same
    10.
    发明授权
    Memory devices including two-dimensional material, methods of manufacturing the same, and methods of operating the same 有权
    包括二维材料的存储器件，其制造方法及其操作方法

    公开(公告)号：US09349802B2

    公开(公告)日：2016-05-24

    申请号：US14265965

    申请日：2014-04-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jin-seong Heo ,  Seong-jun Park ,  Hyeon-jin Shin ,  Jae-ho Lee

    IPC: H01L27/108 ,  H01L21/336 ,  H01L29/16 ,  H01L29/66 ,  H01L45/00 ,  G11C13/00 ,  G11C13/02

    CPC classification number: H01L29/1606 ,  G11C13/0014 ,  G11C13/025 ,  G11C2213/35 ,  H01L27/10808 ,  H01L27/10873 ,  H01L29/66015 ,  H01L29/7606 ,  H01L45/149

    Abstract: Disclosed are memory devices including a two-dimensional (2D) material, methods of manufacturing the same, and methods of operating the same. A memory device may include a transistor, which includes graphene and 2D semiconductor contacting the graphene, and a capacitor connected to the transistor. The memory device may include a first electrode, a first insulation layer, a second electrode, a semiconductor layer, a third electrode, a second insulation layer, and a fourth electrode which are sequentially arranged. The second electrode may include the graphene, and the semiconductor layer may include the 2D semiconductor. Alternatively, the memory device may include first and second electrode elements, a graphene layer between the first and second electrode elements, a 2D semiconductor layer between the graphene layer and the first electrode element, and a dielectric layer between the graphene layer and the second electrode.

    Abstract translation: 公开了包括二维（2D）材料，其制造方法及其操作方法的存储器件。 存储器件可以包括晶体管，其包括与石墨烯接触的石墨烯和2D半导体以及连接到晶体管的电容器。 存储器件可以包括依次布置的第一电极，第一绝缘层，第二电极，半导体层，第三电极，第二绝缘层和第四电极。 第二电极可以包括石墨烯，并且半导体层可以包括2D半导体。 或者，存储器件可以包括第一和第二电极元件，在第一和第二电极元件之间的石墨烯层，在石墨烯层和第一电极元件之间的2D半导体层，以及在石墨烯层和第二电极之间的电介质层 。

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