公开(公告)号：US08884345B2

公开(公告)日：2014-11-11

申请号：US14035305

申请日：2013-09-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-seong Heo ,  Hyun-jong Chung ,  Sun-ae Seo ,  Sung-hoon Lee ,  Hee-jun Yang

IPC: H01L29/78 ,  H01L21/78 ,  H01L29/66 ,  H01L29/16 ,  H01L29/786 ,  H01L29/778

CPC classification number: H01L29/66045 ,  H01L29/1606 ,  H01L29/401 ,  H01L29/66431 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/786 ,  Y10S977/936

Abstract: The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the pair of the first metals separate from each other, a graphene channel layer extending between the first metals and on the first metals, and a source electrode and a drain electrode on both edges of the graphene channel layer.

Abstract translation: 石墨烯电子器件可以包括在导电衬底上的栅极氧化物，导电衬底被配置为用作栅电极，栅极氧化物上的一对第一金属，一对第一金属彼此分开，石墨烯沟道层 在第一金属和第一金属之间延伸，以及在石墨烯通道层的两个边缘上的源电极和漏电极。

公开(公告)号：US09306021B2

公开(公告)日：2016-04-05

申请号：US14244223

申请日：2014-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-jong Chung ,  David Seo ,  Seong-jun Park ,  Kyung-eun Byun ,  Hyun-jae Song ,  Hee-jun Yang ,  Jin-seong Heo

IPC: H01L29/02 ,  H01L29/47 ,  H01L21/74 ,  H01L29/778 ,  H01L29/78 ,  H01L29/16 ,  H01L29/165 ,  H01L29/41 ,  B82Y10/00 ,  H01L29/417 ,  H01L29/66 ,  H01L29/08

CPC classification number: H01L29/47 ,  B82Y10/00 ,  H01L21/74 ,  H01L29/0847 ,  H01L29/0895 ,  H01L29/1606 ,  H01L29/165 ,  H01L29/413 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/66477 ,  H01L29/66977 ,  H01L29/7781 ,  H01L29/7839

Abstract: A graphene device includes: a semiconductor substrate having a first region and a second region; a graphene layer on the first region, but not on the second region of the semiconductor substrate; a first electrode on a first portion of the graphene layer; a second electrode on a second portion of the graphene layer; an insulating layer between the graphene layer and the second electrode; and a third electrode on the second region of the semiconductor substrate. The semiconductor substrate has a tunable Schottky barrier formed by junction of the graphene layer and the semiconductor substrate.

Abstract translation: 石墨烯装置包括：具有第一区域和第二区域的半导体衬底; 在第一区域上但不在半导体衬底的第二区域上的石墨烯层; 在所述石墨烯层的第一部分上的第一电极; 在所述石墨烯层的第二部分上的第二电极; 石墨烯层和第二电极之间的绝缘层; 以及在所述半导体衬底的第二区域上的第三电极。 半导体衬底具有由石墨烯层和半导体衬底的结合形成的可调肖特基势垒。

公开(公告)号：US09281404B2

公开(公告)日：2016-03-08

申请号：US13733304

申请日：2013-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-seong Heo ,  Seong-jun Park ,  Kyung-eun Byun ,  David Seo ,  Hyun-jae Song ,  Hee-jun Yang ,  Hyun-jong Chung

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/786 ,  H01L29/423

CPC classification number: H01L29/78684 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/78696

Abstract: A switching device includes a semiconductor layer, a graphene layer, a gate insulation layer, and a gate formed in a three-dimensional stacking structure between a first electrode and a second electrode formed on a substrate.

Abstract translation: 开关器件包括在第一电极和形成在衬底上的第二电极之间的三维堆叠结构中形成的半导体层，石墨烯层，栅极绝缘层和栅极。

公开(公告)号：US09257528B2

公开(公告)日：2016-02-09

申请号：US14244275

申请日：2014-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-jong Chung ,  Jin-seong Heo ,  Hee-jun Yang ,  Sun-ae Seo ,  Sung-hoon Lee

IPC: H01L29/66 ,  H01L29/423 ,  H01L29/786 ,  H01L29/775

CPC classification number: H01L29/66477 ,  H01L29/42384 ,  H01L29/775 ,  H01L29/78684

Abstract: A graphene electronic device includes a graphene channel layer on a substrate, a source electrode on an end portion of the graphene channel layer and a drain electrode on another end portion of the graphene channel layer, a gate oxide on the graphene channel layer and between the source electrode and the drain electrode, and a gate electrode on the gate oxide. The gate oxide has substantially the same shape as the graphene channel layer between the source electrode and the drain electrode.

Abstract translation: 石墨烯电子器件包括在衬底上的石墨烯通道层，石墨烯通道层的端部上的源电极和在石墨烯通道层的另一端部上的漏电极，石墨烯通道层上的栅极氧化物 源电极和漏电极，栅极氧化物上的栅电极。 栅极氧化物具有与源电极和漏电极之间的石墨烯沟道层基本相同的形状。

公开(公告)号：US09142635B2

公开(公告)日：2015-09-22

申请号：US14507235

申请日：2014-10-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-seong Heo ,  Hyun-jong Chung ,  Sun-ae Seo ,  Sung-hoon Lee ,  Hee-jun Yang

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/78 ,  H01L29/16 ,  H01L29/778 ,  H01L29/786 ,  H01L29/40

CPC classification number: H01L29/66045 ,  H01L29/1606 ,  H01L29/401 ,  H01L29/66431 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/786 ,  Y10S977/936

Abstract: The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the pair of the first metals separate from each other, a graphene channel layer extending between the first metals and on the first metals, and a source electrode and a drain electrode on both edges of the graphene channel layer.

Abstract translation: 石墨烯电子器件可以包括在导电衬底上的栅极氧化物，导电衬底被配置为用作栅电极，栅极氧化物上的一对第一金属，一对第一金属彼此分开，石墨烯沟道层 在第一金属和第一金属之间延伸，以及在石墨烯通道层的两个边缘上的源电极和漏电极。

公开(公告)号：US08835899B2

公开(公告)日：2014-09-16

申请号：US13957602

申请日：2013-08-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hee-jun Yang ,  Sun-ae Seo ,  Sung-hoon Lee ,  Hyun-jong Chung ,  Jin-seong Heo

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/786 ,  B82Y10/00 ,  H01L29/78 ,  H01L29/10 ,  B82Y40/00 ,  H01L29/16

CPC classification number: H01L29/66477 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/1079 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/78 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78684 ,  Y10S977/734 ,  Y10S977/838 ,  Y10S977/842

Abstract: A graphene electronic device and a method of fabricating the graphene electronic device are provided. The graphene electronic device may include a graphene channel layer formed on a hydrophobic polymer layer, and a passivation layer formed on the graphene channel layer. The hydrophobic polymer layer may prevent or reduce adsorption of impurities to transferred graphene, and a passivation layer may also prevent or reduce adsorption of impurities to a heat-treated graphene channel layer.

Abstract translation: 提供石墨烯电子器件和制造石墨烯电子器件的方法。 石墨烯电子器件可以包括形成在疏水聚合物层上的石墨烯通道层和形成在石墨烯通道层上的钝化层。 疏水性聚合物层可以防止或减少杂质对转移的石墨烯的吸附，并且钝化层也可以防止或减少杂质对经热处理的石墨烯通道层的吸附。