MEMORY DEVICE INCLUDING VARIABLE SERIAL RESISTIVE ELEMENT HAVING VOLTAGE DIVIDING EFFECT AND OPERATING METHOD THEREOF

    公开(公告)号:US20250029656A1

    公开(公告)日:2025-01-23

    申请号:US18774249

    申请日:2024-07-16

    Abstract: A memory device including a variable serial resistive element having a voltage dividing effect and an operating method thereof are disclosed. The memory device includes a memory unit, a variable serial resistive element connected to the memory unit, a controller connected to the variable serial resistive element and configured to control a resistance of the variable serial resistive element, and a power source connected to the variable serial resistive element. The operating method of the memory device includes maintaining a resistance of a serial resistive element connected to a memory element as a first resistance during a first operation of the memory element and maintaining the resistance of the serial resistive element as a second resistance during a second operation of the memory element, wherein the serial resistive element includes a variable resistive element.

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