公开(公告)号：US20230374379A1

公开(公告)日：2023-11-23

申请号：US18229709

申请日：2023-08-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Garam PARK ,  Tae Gon KIM ,  Jooyeon AHN ,  Ji-Yeong KIM ,  Nayoun WON ,  Shin Ae JUN

IPC: C09K11/88 ,  C09K11/02 ,  G02F1/13357 ,  C09K11/08 ,  H10K50/115 ,  H10K59/12 ,  H10K59/38

CPC classification number: C09K11/883 ,  C09K11/02 ,  G02F1/133617 ,  C09K11/0883 ,  H10K50/115 ,  H10K59/12 ,  H10K59/38 ,  B82Y20/00

Abstract: Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.

公开(公告)号：US20220246804A1

公开(公告)日：2022-08-04

申请号：US17586956

申请日：2022-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Garam PARK ,  Shang Hyeun PARK ,  Min Jong BAE ,  Mi Hye LIM ,  Deukseok CHUNG ,  Shin Ae JUN

IPC: H01L33/50 ,  C09K11/88 ,  C09K11/70 ,  C09K11/02 ,  C09K11/56

Abstract: A quantum dot composite includes a matrix and a plurality of quantum dots dispersed in the matrix, and a color conversion panel and a display panel including the same. The plurality of quantum dots include a metal including indium (In) and zinc and a non-metal including phosphorous (P), selenium, and sulfur, wherein the plurality of quantum dots includes a mole ratio of sulfur to indium of greater than or equal to about 3:1 and less than or equal to about 6:1, and a mole ratio of sulfur to selenium of greater than or equal about 0.69:1 and less than or equal to about 0.89, and a mole ratio of zinc to indium of greater than or equal to about 10:1 and less than or equal to about 12.4:1, and wherein the plurality of the quantum dots are configured to emit red light.

公开(公告)号：US20210395605A1

公开(公告)日：2021-12-23

申请号：US17462428

申请日：2021-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun MIN ,  Eun Joo JANG ,  Yongwook KIM ,  Garam PARK

IPC: C09K11/02 ,  C09K11/66 ,  C09K11/88 ,  C08K3/16 ,  C09K11/61

Abstract: A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: ABX3+α  Chemical Formula 1 wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers

公开(公告)号：US20200283680A1

公开(公告)日：2020-09-10

申请号：US16883989

申请日：2020-05-26

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung SDI Co., Ltd. ,  Samsung Display Co., Ltd.

Inventor： Shin Ae JUN ,  Taekhoon KIM ,  Garam PARK ,  Yong Seok HAN ,  Eun Joo JANG ,  Hyo Sook JANG ,  Tae Won JEONG ,  Shang Hyeun PARK

IPC: C09K11/02 ,  C09K11/88 ,  C09K11/70 ,  C08K3/32 ,  C08K3/30 ,  G02F1/1335 ,  G02F1/13357

Abstract: A quantum dot, including a core including a first semiconductor material that includes indium; and a shell including a second semiconductor material, and disposed on the core, wherein the first semiconductor material and the second semiconductor material are different, wherein the shell has at least two branch portions and a valley portion connecting the at least two branch portions, at least one of the at least two branch portions comprises Zn, Se, and S, and a content of sulfur in the at least one branch portion increases in a direction away from the core.

公开(公告)号：US20210284905A1

公开(公告)日：2021-09-16

申请号：US17308333

申请日：2021-05-05

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Samsung Display Co., Ltd. ,  SAMSUNG SDI CO., LTD.

Inventor： Ha Il KWON ,  Tae Gon KIM ,  Shang Hyeun PARK ,  Eun Joo JANG ,  Shin Ae JUN ,  Garam PARK

IPC: C09K11/02 ,  C08K3/16 ,  C08K3/30 ,  C08K9/04 ,  C09K11/56 ,  G02F1/13357

Abstract: A composition including a plurality of quantum dots; a binder polymer; a thiol compound having at least two thiol groups; a polyvalent metal compound; a polymerizable monomer having a carbon-carbon double bond; a photoinitiator; and a solvent.

公开(公告)号：US20200220043A1

公开(公告)日：2020-07-09

申请号：US16786004

申请日：2020-02-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Garam PARK ,  Tae Hyung KIM ,  Eun Joo JANG ,  Hyo Sook JANG ,  Shin Ae JUN ,  Yongwook KIM ,  Taekhoon KIM ,  Jihyun MIN ,  Yuho WON

IPC: H01L33/04 ,  H01L33/34 ,  H01L33/32 ,  H01L33/30 ,  H01L33/28 ,  H01L33/24 ,  C09K11/88 ,  C09K11/70 ,  C09K11/61 ,  C09K11/02

Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.

公开(公告)号：US20200174288A1

公开(公告)日：2020-06-04

申请号：US16697650

申请日：2019-11-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Gon KIM ,  Garam PARK ,  Jooyeon AHN ,  Shang Hyeun PARK ,  Shin Ae JUN

IPC: G02F1/017 ,  H01L51/50 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L33/34 ,  C09K11/88 ,  B82Y20/00

Abstract: A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.

公开(公告)号：US20190211260A1

公开(公告)日：2019-07-11

申请号：US16245544

申请日：2019-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho WON ,  Nayoun WON ,  Sungwoo HWANG ,  Eun Joo JANG ,  Soo Kyung KWON ,  Yong Wook KIM ,  Jihyun MIN ,  Garam PARK ,  Shang Hyeun PARK ,  Hyo Sook JANG ,  Shin Ae JUN ,  Yong Seok HAN

IPC: C09K11/08 ,  C08L57/10 ,  G02F1/1335 ,  H01L51/50 ,  H01L27/32

CPC classification number: C09K11/0883 ,  B82Y20/00 ,  B82Y40/00 ,  C08L57/10 ,  C08L2203/20 ,  C09K11/025 ,  C09K11/565 ,  C09K11/70 ,  C09K11/883 ,  G02F1/133617 ,  G02F2001/133614 ,  G02F2202/022 ,  G02F2202/102 ,  G02F2202/36 ,  H01L27/322 ,  H01L51/502 ,  H05B33/14

Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.

公开(公告)号：US20250063742A1

公开(公告)日：2025-02-20

申请号：US18805219

申请日：2024-08-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yumin KIM ,  Seyun KIM ,  Garam PARK ,  Hyunjae SONG ,  Seungyeul YANG ,  Seungdam Seungdam

IPC: H10B63/00

Abstract: A variable resistance memory device includes a channel layer, a resistance change layer provided on the channel layer, the resistance change layer having resistance characteristics that change based on an applied voltage and having a first oxygen diffusion activation energy, and an interface layer provided between the channel layer and the resistance change layer, the interface layer having a second oxygen diffusion activation energy that is greater than the first oxygen diffusion activation energy of the resistance change layer.

公开(公告)号：US20240196763A1

公开(公告)日：2024-06-13

申请号：US18214755

申请日：2023-06-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yumin KIM ,  Seyun KIM ,  Garam PARK ,  Hyunjae SONG ,  Seungyeul YANG ,  Seungdam HYUN ,  Jooheon KANG ,  Jinwoo LEE

IPC: H10N70/00 ,  H10B63/00

CPC classification number: H10N70/826 ,  H10B63/84 ,  H10N70/8833

Abstract: A variable resistance memory device includes a pillar, a resistance change layer provided at a side surface of the pillar, a semiconductor layer provided at a side surface of the resistance change layer, a gate insulating layer provided at a side surface of the semiconductor layer, a plurality of isolating layers and a plurality of gate electrodes alternately arranged along a surface of the gate insulating layer, and an internal resistance layer between the resistance change layer and the semiconductor layer, where a resistance of the internal resistance layer is greater than a resistance of the semiconductor layer when the semiconductor layer includes conductor characteristics and the resistance of the internal resistance layer is less than the resistance of the semiconductor layer when the semiconductor layer includes insulator characteristics.