公开(公告)号：US20210313169A1

公开(公告)日：2021-10-07

申请号：US17208216

申请日：2021-03-22

申请人： Samsung Electronics Co., Ltd.

发明人： Hyunjae SONG ,  Kaoru YAMAMOTO ,  Changhyun KIM ,  Shuji MORIYA ,  Jungsoo YOON ,  Soyoung LEE ,  Changseok LEE

IPC分类号： H01L21/02 ,  H01L21/428 ,  H01L21/3213 ,  H01J37/32

摘要： Provided are apparatuses for manufacturing semiconductor devices. An apparatus includes a reaction chamber having a stage to be loaded on a substrate, wherein set plasma is formed over the stage, a plurality of gas supply lines connected to the reaction chamber, flow controllers formed on the plurality of gas supply lines, respectively, to control the amount of a gas supplied to the reaction chamber, and a gas splitter configured to supply a mixed gas to the flow controllers. The apparatus may be a thin film deposition apparatus using plasma and further include a flow control unit connected to the gas splitter and a gas supply source connected to the flow control unit.

公开(公告)号：US20200075324A1

公开(公告)日：2020-03-05

申请号：US16385441

申请日：2019-04-16

申请人： Samsung Electronics Co., Ltd.

发明人： Kaoru YAMAMOTO ,  Chang-Hyun KIM ,  Hyun-Jae SONG ,  Keun-Wook SHIN ,  Hyeon-Jin SHIN ,  Sung-Joo AN ,  Chang-Seok LEE ,  Kee-Young JUN ,  Geun-O JEONG ,  Jang-Hee LEE

IPC分类号： H01L21/02 ,  H01L21/67 ,  H01J37/32

摘要： In a plasma deposition method, a substrate is loaded onto a substrate stage within a chamber. A first plasma is generated at a region separated from the substrate by a first distance. A first process gas is supplied to the first plasma region to perform a pre-treatment process on the substrate. A second plasma is generated at a region separated from the substrate by a second distance different from the first distance. A second process gas is supplied to the second plasma region to perform a deposition process on the substrate.

公开(公告)号：US20220085025A1

公开(公告)日：2022-03-17

申请号：US17225601

申请日：2021-04-08

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Hyunseok LIM ,  Minhyuk CHO ,  Kyung-Eun BYUN ,  Hyeonjin SHIN ,  Kaoru YAMAMOTO ,  Jungsoo YOON ,  Soyoung LEE ,  Geuno JEONG

IPC分类号： H01L27/108

摘要： A wiring structure includes a first conductive pattern including doped polysilicon on a substrate, an ohmic contact pattern including a metal silicide on the first conductive pattern, an oxidation prevention pattern including a metal silicon nitride on the ohmic contact pattern, a diffusion barrier including graphene on the oxidation prevention pattern, and a second conductive pattern including a metal on the diffusion barrier.