公开(公告)号：US20200075324A1

公开(公告)日：2020-03-05

申请号：US16385441

申请日：2019-04-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kaoru YAMAMOTO ,  Chang-Hyun KIM ,  Hyun-Jae SONG ,  Keun-Wook SHIN ,  Hyeon-Jin SHIN ,  Sung-Joo AN ,  Chang-Seok LEE ,  Kee-Young JUN ,  Geun-O JEONG ,  Jang-Hee LEE

IPC: H01L21/02 ,  H01L21/67 ,  H01J37/32

Abstract: In a plasma deposition method, a substrate is loaded onto a substrate stage within a chamber. A first plasma is generated at a region separated from the substrate by a first distance. A first process gas is supplied to the first plasma region to perform a pre-treatment process on the substrate. A second plasma is generated at a region separated from the substrate by a second distance different from the first distance. A second process gas is supplied to the second plasma region to perform a deposition process on the substrate.