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    SEMICONDUCTOR DEVICE INCLUDING DATA STORAGE MATERIAL PATTERN
    3.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING DATA STORAGE MATERIAL PATTERN 有权

    公开(公告)号：US20220085286A1

    公开(公告)日：2022-03-17

    申请号：US17384933

    申请日：2021-07-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jeonghee PARK ,  Dongho AHN ,  Wonjun PARK

    IPC: H01L45/00 ,  H01L27/24

    Abstract: A semiconductor device includes a first conductive line on a lower structure and extending in a first horizontal direction; a second conductive line on the first conductive line and extending in a second horizontal direction, the second horizontal direction being perpendicular to the first horizontal direction; and a memory cell structure between the first conductive line and the second conductive line. The memory cell may structure include a data storage material pattern and a selector material pattern overlapping the data storage material pattern in a vertical direction. The data storage material pattern may include a phase change material layer of InαGeβSbγTeδ. In the phase change material layer of InαGeβSbγTeδ, a sum of α and β may be lower than about 30 at. %, and a sum of γ and δ may be higher than about 70 at. %.

    MEMORY DEVICES
    4.
    发明公开
    MEMORY DEVICES 审中-公开

    公开(公告)号：US20240188305A1

    公开(公告)日：2024-06-06

    申请号：US18526031

    申请日：2023-12-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jinwoo LEE ,  Hyunchul SOHN ,  Jeongwoo LEE ,  Jaeyeon KIM ,  Kwangmin PARK ,  Dongho AHN ,  Jinmyung CHOI

    IPC: H10B63/00 ,  H10B63/10

    CPC classification number: H10B63/22 ,  H10B63/10 ,  H10B63/80

    Abstract: A memory device includes a substrate; a plurality of first conductive lines on the substrate and extending in a first direction; a plurality of second conductive lines on the plurality of first conductive lines and extending in a second direction crossing the first direction; and a plurality of first memory cells respectively arranged between the plurality of first conductive lines and the plurality of second conductive lines, wherein each first memory cell of the plurality of first memory cells includes a switching device and a variable resistance material pattern, and the switching device includes a material having a composition of LaxNi1-xOy, in which 0.13≤x≤0.30 and 0.9≤y≤1.5.

    RESISTIVE MEMORY DEVICE
    5.
    发明申请
    RESISTIVE MEMORY DEVICE 有权

    公开(公告)号：US20220406844A1

    公开(公告)日：2022-12-22

    申请号：US17568866

    申请日：2022-01-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chungman KIM ,  Bonwon KOO ,  Dongho AHN ,  Kiyeon YANG ,  Zhe WU ,  Chang Seung LEE

    IPC: H01L27/24 ,  H01L45/00

    Abstract: A resistive memory device including a resistive memory pattern; and a selection element pattern electrically connected to the resistive memory pattern, the selection element pattern including a chalcogenide switching material and at least one metallic material, the chalcogenide switching material including germanium, arsenic, and selenium, and the at least one metallic material including aluminum, strontium, or indium, wherein the selection element pattern includes an inhomogeneous material layer in which content of the at least one metallic material in the selection element pattern is variable according to a position within the selection element pattern.

    SEMICONDUCTOR APPARATUS
    8.
    发明公开
    SEMICONDUCTOR APPARATUS 审中-公开

    公开(公告)号：US20230354725A1

    公开(公告)日：2023-11-02

    申请号：US18349433

    申请日：2023-07-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kiyeon YANG ,  Dongho AHN ,  Changseung LEE

    IPC: H10B63/00 ,  H10N70/00 ,  H10N70/20

    CPC classification number: H10N70/8828 ,  H10B63/24 ,  H10B63/84 ,  H10N70/066 ,  H10N70/231 ,  H10N70/8413

    Abstract: A semiconductor apparatus may include a plurality of semiconductor unit devices. Each of the semiconductor unit devices may be arranged between a first insulating layer and a second insulating layer that are apart from each other in a direction normal to a substrate. Each of the semiconductor unit devices may include a selection device layer and a phase change material layer that extend side by side in a direction parallel to the substrate. The phase change material layer may have a superlattice-like structure. The phase change material layer may be arranged along a recess portion that is formed by the first insulating layer, the second insulating layer, and the selection device layer.

    SEMICONDUCTOR APPARATUS
    10.
    发明申请
    SEMICONDUCTOR APPARATUS 有权

    公开(公告)号：US20220173316A1

    公开(公告)日：2022-06-02

    申请号：US17330950

    申请日：2021-05-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kiyeon YANG ,  Dongho AHN ,  Changseung LEE

    IPC: H01L45/00 ,  H01L27/24

    Abstract: Provided is a semiconductor apparatus including a plurality of semiconductor unit devices. Each of the semiconductor unit devices may be arranged between a first insulating layer and a second insulating layer that are apart from each other in a direction normal to a substrate. Each of the semiconductor unit devices may include a selection device layer and a phase change material layer that extend side by side in a direction parallel to the substrate. The phase change material layer may have a superlattice-like structure. The phase change material layer may be arranged along a recess portion that is formed by the first insulating layer, the second insulating layer, and the selection device layer.

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