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1.
公开(公告)号:US20240274650A1
公开(公告)日:2024-08-15
申请号:US18626726
申请日:2024-04-04
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jeonggyu SONG , Younsoo KIM , Jaeho LEE
Abstract: A capacitor includes: a bottom electrode; a top electrode over the bottom electrode; a dielectric film between the bottom electrode and the top electrode; and a doped Al2O3 film between the top electrode and the dielectric film, wherein the doped Al2O3 film includes a first dopant, and an oxide including the same element as the first dopant has a higher dielectric constant than a dielectric constant of Al2O3.
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公开(公告)号:US20240014543A1
公开(公告)日:2024-01-11
申请号:US18347824
申请日:2023-07-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kwangbok PARK , Jaeho LEE , Yonghun JI
CPC classification number: H01Q1/2266 , H05K7/1427 , G06F1/1662
Abstract: According to an embodiment of the disclosure, an electronic device may comprise: a housing including a conductive portion, a plurality of non-conductive portions, and a plurality of openings, a plurality of keyboard key caps exposed through the plurality of openings of the housing, an antenna, and a circuit board disposed inside the housing and electrically connected to the antenna. At least one of the plurality of openings may be defined by the conductive portion, the plurality of the non-conductive portions, and the antenna.
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3.
公开(公告)号:US20230076169A1
公开(公告)日:2023-03-09
申请号:US17987369
申请日:2022-11-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sungho KIM , Cheheung KIM , Jaeho LEE
Abstract: A neural network apparatus that is configured to process an operation includes neural network circuitry configured to receive a first input of an n-bit activation, store a second input of an m-bit weight, perform a determination whether to perform an operation on an ith bit of the first input and a jth bit of the second input, output an operation value of an operation performed on the ith bit of the first input and the jth bit of the second input based on the determination, and produce an operation value of the operation based on the determination.
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4.
公开(公告)号:US20200242454A1
公开(公告)日:2020-07-30
申请号:US16557182
申请日:2019-08-30
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sungho KIM , Cheheung KIM , Jaeho LEE
Abstract: A neural network apparatus that is configured to process an operation includes neural network circuitry configured to receive a first input of an n-bit activation, store a second input of an m-bit weight, perform a determination whether to perform an operation on an ith bit of the first input and a jth bit of the second input, output an operation value of an operation performed on the ith bit of the first input and the jth bit of the second input based on the determination, and produce an operation value of the operation based on the determination.
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公开(公告)号:US20200058741A1
公开(公告)日:2020-02-20
申请号:US16662872
申请日:2019-10-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jaeho LEE , Hyeonjin SHIN , Dongwook LEE , Seongjun PARK , Kiyoung LEE , Eunkyu LEE , Sanghyun JO , Jinseong HEO
IPC: H01L29/16 , H01L29/12 , H01L27/15 , H01L27/146 , H01L27/144 , H01L31/0352 , H01L51/00 , H01L51/05 , H01L31/101 , H01L31/028 , H01L31/09
Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.
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公开(公告)号:US20190325933A1
公开(公告)日:2019-10-24
申请号:US16195199
申请日:2018-11-19
Inventor: Jaeho LEE , Jaeyoon Sim , Kyeongjun Lee
Abstract: A resistive memory device includes a memory cell array in which a plurality of memory cells are arranged. Each of the plurality of memory cells includes a variable resistor comprising a first end connected to a bit line, and a second end, a row transistor connected between a row source line and the second end of the variable resistor, the row transistor being selectable by a row word line, and a column transistor connected between a column source line and the second end of the variable resistor, the column transistor being selectable by a column word line. Based on the row transistor being selected, first data is written or second data is read in a row direction of the memory cell array, and based on the column transistor being selected, the first data is written or the second data is read in a column direction of the memory cell array.
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7.
公开(公告)号:US20190259323A1
公开(公告)日:2019-08-22
申请号:US16282947
申请日:2019-02-22
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jaeho LEE , Minseung KIM , Taekyoung KIM , Jongkon BAE , Youngil YOON , Yohan LEE , Jihoon JEON , Hyesoon JEONG , Yunpyo HONG , Jongwu BAEK
IPC: G09G3/20 , G09G3/3208
Abstract: An electronic device includes a touch screen display including an organic light emitting layer that is formed of a plurality of pixels, a wireless communication circuit, a processor operatively coupled with the display and the wireless communication circuit, and a memory operatively coupled with the processor. The memory stores instructions that, upon execution, enable the processor to provide a first mode of displaying a first graphical user interface (GUI) on the display by using a first number of colors in a state where all the pixels are turned on, a second mode of displaying a second GUI on the display by using a second number of colors in a state where some of the pixels are turned off, and a third mode of displaying a third GUI on the display by using the first number of colors in a state where some of the pixels are turned off, and select one of the first mode, the second mode or the third mode on the basis of at least one of a state of the electronic device, a content of the GUI or a use pattern of a user.
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公开(公告)号:US20180197956A1
公开(公告)日:2018-07-12
申请号:US15825344
申请日:2017-11-29
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jaeho LEE , Hyeonjin Shin , Dongwook Lee , Seongjun Park , Kiyoung Lee , Eunkyu Lee , Sanghyun Jo , Jinseong Heo
IPC: H01L29/16 , H01L31/0352 , H01L27/146 , H01L27/15 , H01L27/144 , H01L29/12
Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.
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9.
公开(公告)号:US20180145190A1
公开(公告)日:2018-05-24
申请号:US15603796
申请日:2017-05-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kiyoung LEE , Jinseong HEO , Jaeho LEE , Haeryong KIM , Seongjun PARK , Hyeonjin SHIN , Eunkyu LEE , Sanghyun JO
IPC: H01L31/0216 , H01L31/028 , H01L31/0224 , H01L31/0352 , H01L31/18 , G01N21/59
CPC classification number: H01L31/02161 , G01N21/59 , H01L31/022466 , H01L31/028 , H01L31/0304 , H01L31/035218 , H01L31/1804 , Y02E10/544 , Y02E10/547
Abstract: A broadband multi-purpose optical device includes a semiconductor layer having a light absorption characteristic, a first active layer having a light absorption band different from a light absorption band of the semiconductor layer, a first two-dimensional (2D) material layer adjacent to the first active layer, and a first interfacial layer configured to control a pinning potential of the semiconductor layer and the first active layer. The broadband multi-purpose optical device may further include at least one second active layer, and may include a tandem structure that further includes at least one second 2D material layer. The first active layer and the second active layer may have different light absorption bands. The broadband multi-purpose optical device may further include a second interfacial layer adjacent to the first 2D material layer.
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10.
公开(公告)号:US20170338260A1
公开(公告)日:2017-11-23
申请号:US15668997
申请日:2017-08-04
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jinseong HEO , Seongjun PARK , Kiyoung LEE , Sangyeob LEE , Eunkyu LEE , Jaeho LEE
IPC: H01L27/146 , H01L31/0224 , H01L29/786 , H01L31/10 , H01L27/144
CPC classification number: H01L31/1075 , H01L27/144 , H01L27/14603 , H01L29/1606 , H01L29/267 , H01L29/66015 , H01L29/6603 , H01L31/02327 , H01L31/028 , H01L31/032 , H01L31/0326 , H01L31/0336 , H01L31/0392 , H01L31/09 , H01L31/105 , H01L31/109 , H01L31/1136 , H01L31/18 , Y02E10/547
Abstract: A photodetector includes an insulating layer on a substrate, a first graphene layer on the insulating layer, a 2-dimensional (2D) material layer on the first graphene layer, a second graphene layer on the 2D material layer, a first electrode on the first graphene layer, and a second electrode on the second graphene layer. The 2D material layer includes a barrier layer and a light absorption layer. The barrier layer has a larger bandgap than the light absorption layer.
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