Abstract:
A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.
Abstract:
A semiconductor device 100 includes a first insulating material 110 attached to a second main surface 106b of a semiconductor chip 106, and a second insulating material 112 attached to side surfaces of the semiconductor chip 106, the first insulating material 110 and an island 102. The semiconductor chip 106 is fixed to the island 102 via the first insulating material 110 and the second insulating material 112. The first insulating material 110 ensures a high dielectric strength between the semiconductor chip 106 and the island 102. Though the second insulating material 112 having a modulus of elasticity greater than that of the first insulating material 110, the semiconductor chip 106 is firmly attached to the island 102.
Abstract:
A semiconductor device includes a semiconductor chip, and a terminal connected with the semiconductor chip. The terminal has a first surface and a second surface spaced from each other in a thickness direction. The semiconductor device also includes a sealing resin covering the semiconductor chip and the terminal. The sealing resin is so configured that the first surface of the terminal is exposed from the sealing resin. The terminal is formed with an opening to be filled with the sealing resin.
Abstract:
A semiconductor device includes a substrate, a lead, and a semiconductor element. The substrate has an obverse surface facing in a thickness direction. The lead includes a die pad bonded to the substrate and a terminal connected to the pad. The semiconductor element is bonded to the pad. The bonding layer is disposed between the obverse surface and the pad. The obverse surface includes a first edge extending in a first direction crossing the thickness direction and a second edge extending in a second direction crossing the thickness direction and the first direction. As viewed in the thickness direction, the terminal protrudes outward from the obverse surface relative to the first edge. The distance from the first edge to the bonding layer in the second direction is shorter than the distance from the second edge to the bonding layer in the first direction.
Abstract:
The semiconductor device A1 includes a support member 2, a metal part 30 having obverse and reverse surfaces 301-302 spaced in z direction, with the reverse surface 302 bonded to the support member 2, a second bonding layer 42 boding the support member 2 and the metal part 30, a semiconductor element 10 facing the obverse surface 301 and bonded to the metal part 30, and a sealing member 7 covering the support member 2, metal part 30, second bonding layer 42 and semiconductor element 10. The metal part 30 includes a first body 31 of a first material and a second body 32 of a second material, with a boundary between the bodies 31-32. The second material has a linear thermal expansion coefficient smaller than that of the first material. The semiconductor device is improved in reliability by reducing thermal stress from heat generation of the semiconductor element.
Abstract:
A semiconductor device is provided with a semiconductor element having a plurality of electrodes, a plurality of terminals electrically connected to the plurality of electrodes, and a sealing resin covering the semiconductor element. The sealing resin covers the plurality of terminals such that a bottom surface of the semiconductor element in a thickness direction is exposed. A first terminal, which is one of the plurality of terminals, is disposed in a position that overlaps a first electrode, which is one of the plurality of electrodes, when viewed in the thickness direction. The semiconductor device is provided with a conductive connection member that contacts both the first terminal and the first electrode.
Abstract:
A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.
Abstract:
A semiconductor device includes a lead, a semiconductor element, and a sealing resin. The lead includes a mounting surface facing in a thickness direction, and an end surface facing in a direction orthogonal to the thickness direction and connected to the mounting surface. The semiconductor element is electrically bonded to the mounting surface. The sealing resin covers the semiconductor element and is in contact with the mounting surface and the end surface. The end surface is formed with a first portion that includes at least one of a projecting portion protruding from the end surface or a recessed portion recessed from the end surface. The projecting portion is located outside an outer edge of the mounting surface as viewed in the thickness direction. The recessed portion is enclosed in the outer edge as viewed in the thickness direction.
Abstract:
A semiconductor device includes a plurality of die pad sections, a plurality of semiconductor chips, each of which is arranged in each of the die pad sections, a resin encapsulation portion having a recess portion for exposing at least a portion of the die pad sections, the resin encapsulation portion configured to cover the die pad sections and the semiconductor chips, and a heat radiation layer arranged in the recess portion. The heat radiation layer includes an elastic layer exposed toward a direction in which the recess portion is opened. The heat radiation layer directly faces at least a portion of the die pad sections. The elastic layer overlaps with at least a portion of the die pad sections when seen in a thickness direction of the heat radiation layer.
Abstract:
A semiconductor device includes a plurality of die pad sections, a plurality of semiconductor chips, each of which is arranged in each of the die pad sections, a resin encapsulation portion having a recess portion for exposing at least a portion of the die pad sections, the resin encapsulation portion configured to cover the die pad sections and the semiconductor chips, and a heat radiation layer arranged in the recess portion. The heat radiation layer includes an elastic layer exposed toward a direction in which the recess portion is opened. The heat radiation layer directly faces at least a portion of the die pad sections. The elastic layer overlaps with at least a portion of the die pad sections when seen in a thickness direction of the heat radiation layer.