公开(公告)号：US20090014855A1

公开(公告)日：2009-01-15

申请号：US12133210

申请日：2008-06-04

Applicant: Yoshinori MIYAKI ,  Hiromichi Suzuki ,  Tsuyoshi Kaneda

Inventor： Yoshinori MIYAKI ,  Hiromichi Suzuki ,  Tsuyoshi Kaneda

IPC: H01L23/495

CPC classification number: H01L24/85 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/49582 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/743 ,  H01L24/78 ,  H01L24/83 ,  H01L2224/29 ,  H01L2224/29007 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29393 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48455 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48664 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/743 ,  H01L2224/78303 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85464 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/14 ,  H01L2924/15763 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01082 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/01046 ,  H01L2924/00015

Abstract: A semiconductor integrated circuit device includes a die pad and a semiconductor chip mounted over the die pad, having a main surface with surface electrodes and a back surface. Suspension leads support the die pad, and leads are arranged around the semiconductor chip, each of the leads having inner and outer lead portions. A first plating layer is formed at a part of the inner lead portions and a second plating layer is formed over the outer lead portion. Wires electrically connect the surface electrodes with the inner lead portions through the first plating layer. A resin body seals the die pad, the chip, the wires and the inner lead portions. The second plating layer is comprised of different materials than the first plating layer, and is a Pb-free metal layer.

Abstract translation: 半导体集成电路器件包括芯片焊盘和安装在芯片焊盘上的半导体芯片，具有表面电极和背面的主表面。 悬挂引线支撑芯片焊盘，并且引线布置在半导体芯片周围，每个引线具有内引线部分和外引线部分。 在内引线部分的一部分上形成第一镀层，并且在外引线部分上形成第二镀层。 电线通过第一镀层将表面电极与内引线部分电连接。 树脂体密封芯片焊盘，芯片，导线和内引线部分。 第二镀层由与第一镀层不同的材料构成，是无铅金属层。

公开(公告)号：US07176056B2

公开(公告)日：2007-02-13

申请号：US10295908

申请日：2002-11-18

Applicant: Yoshinori Miyaki ,  Hiromichi Suzuki ,  Tsuyoshi Kaneda

Inventor： Yoshinori Miyaki ,  Hiromichi Suzuki ,  Tsuyoshi Kaneda

IPC: H01L21/48 ,  H01L21/44

CPC classification number: H01L24/85 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/49582 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/743 ,  H01L24/78 ,  H01L24/83 ,  H01L2224/29 ,  H01L2224/29007 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29393 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48455 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48664 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/743 ,  H01L2224/78303 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85464 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/14 ,  H01L2924/15763 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01082 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/01046 ,  H01L2924/00015

Abstract: Arrangements are provided to effectively prevent wire disconnection generated due to an increase of heat applied to a semiconductor integrated circuit device The semiconductor integrated circuit device is structured such that a metal layer containing a Pd layer is provided in a portion to which a connecting member having a conductivity is connected, and an alloy layer having a melting point higher than that of an Sn—Pb eutectic solder and containing no Pb as a main composing metal is provided outside a portion molded by a resin. Further, a metal layer in which a thickness in a portion to which the connecting member having the conductivity is adhered is equal to or more than 10 μm is provided in the connecting member.

Abstract translation: 提供了有效地防止由于施加到半导体集成电路器件的热量增加而产生的断线的布置。半导体集成电路器件被构造成使得包含Pd层的金属层设置在具有 导电性被连接，并且熔点高于Sn-Pb共晶焊料并且不含Pb作为主要组成金属的合金层设置在由树脂模制的部分之外。 此外，连接构件中设置有其中粘附有导电性的连接构件的部分中的厚度等于或大于10μm的金属层。

公开(公告)号：US06891253B2

公开(公告)日：2005-05-10

申请号：US09785452

申请日：2001-02-20

Applicant: Yoshinori Miyaki ,  Hiromichi Suzuki ,  Tsuyoshi Kaneda

Inventor： Yoshinori Miyaki ,  Hiromichi Suzuki ,  Tsuyoshi Kaneda

IPC: H01L23/50 ,  H01L21/607 ,  H01L23/495

CPC classification number: H01L24/85 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/49582 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/743 ,  H01L24/78 ,  H01L24/83 ,  H01L2224/29 ,  H01L2224/29007 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29393 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48455 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48664 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/743 ,  H01L2224/78303 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85464 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/14 ,  H01L2924/15763 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01082 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/01046 ,  H01L2924/00015

Abstract: Arrangements are provided to effectively prevent wire disconnection generated due to an increase of heat applied to a semiconductor integrated circuit device. The semiconductor integrated circuit device is structured such that a metal layer containing a Pd layer is provided in a portion to which a connecting member having a conductivity is connected, and an alloy layer having a melting point higher than that of an Sn—Pb eutectic solder and containing no Pb as a main composing metal is provided outside a portion molded by a resin. Further, a metal layer in which a thickness in a portion to which the connecting member having the conductivity is adhered is equal to or more than 10 μm is provided in the connecting member.

Abstract translation: 提供了安排，以有效地防止由于施加到半导体集成电路器件的热量的增加而产生的断线。 半导体集成电路器件被构造成使得在连接具有导电性的连接部件的部分中提供含有Pd层的金属层，并且具有比Sn-Pb共晶焊料的熔点高的熔点的合金层 并且不含Pb作为主要组成金属，设置在由树脂模制的部分之外。 此外，连接构件中设置有其中粘附有导电性的连接构件的部分中的厚度等于或大于10μm的金属层。

公开(公告)号：US20040245607A1

公开(公告)日：2004-12-09

申请号：US10890321

申请日：2004-07-14

Inventor： Yoshinori Miyaki ,  Hiromichi Suzuki ,  Tsuyoshi Kaneda

IPC: H01L023/495

CPC classification number: H01L24/85 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/49582 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/743 ,  H01L24/78 ,  H01L24/83 ,  H01L2224/29 ,  H01L2224/29007 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29393 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48455 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48664 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/743 ,  H01L2224/78303 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85464 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/14 ,  H01L2924/15763 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01082 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/01046 ,  H01L2924/00015

Abstract: A semiconductor integrated circuit device is provided which includes a wire having a diameter equal to or less than 30 nullm, and a connected member molded by a resin. The connected member includes a metal layer including a palladium layer provided at a portion to which said wire is connected. A solder containing Pb as a main composition metal is provided at a portion outside a portion molded by the resin.

Abstract translation: 提供一种半导体集成电路器件，其包括直径等于或小于30μm的线，以及由树脂模制的连接部件。 连接构件包括金属层，该金属层包括设置在所述导线所连接的部分处的钯层。 在由树脂成型的部分的外侧设置包含Pb作为主要成分金属的焊料。

公开(公告)号：US20030067067A1

公开(公告)日：2003-04-10

申请号：US10295908

申请日：2002-11-18

Inventor： Yoshinori Miyaki ,  Hiromichi Suzuki ,  Tsuyoshi Kaneda

IPC: H01L023/48

CPC classification number: H01L24/85 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/49582 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/743 ,  H01L24/78 ,  H01L24/83 ,  H01L2224/29 ,  H01L2224/29007 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29393 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48455 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48664 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/743 ,  H01L2224/78303 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85464 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/14 ,  H01L2924/15763 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01082 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/01046 ,  H01L2924/00015

Abstract: Arrangements are provided to effectively prevent wire disconnection generated due to an increase of heat applied to a semiconductor integrated circuit device The semiconductor integrated circuit device is structured such that a metal layer containing a Pd layer is provided in a portion to which a connecting member having a conductivity is connected, and an alloy layer having a melting point higher than that of an SnnullPb eutectic solder and containing no Pb as a main composing metal is provided outside a portion molded by a resin. Further, a metal layer in which a thickness in a portion to which the connecting member having the conductivity is adhered is equal to or more than 10 nullm is provided in the connecting member.

Abstract translation: 提供了有效地防止由于施加到半导体集成电路器件的热量增加而产生的断线的布置。半导体集成电路器件被构造成使得包含Pd层的金属层设置在具有 导电性被连接，并且熔点高于Sn-Pb共晶焊料并且不含Pb作为主要组成金属的合金层设置在由树脂模制的部分之外。 此外，连接构件中设置有其中粘附有导电性的连接构件的部分中的厚度等于或大于10μm的金属层。

公开(公告)号：US06278191B1

公开(公告)日：2001-08-21

申请号：US09322638

申请日：1999-05-28

Applicant: Inderjit Singh

Inventor： Inderjit Singh

IPC: H01L2348

CPC classification number: H01L24/85 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/78303 ,  H01L2224/78306 ,  H01L2224/85205 ,  H01L2924/00015 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2224/45144 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/20753

Abstract: A bond pad sealing arrangement and method that utilizes ball bonds to protect a bond pad is described. A relatively large free air ball is formed at a distal end of a bonding wire used for ball bonding. The free air ball is pressed against a bond pad and ultrasonically welded to form a ball bond. The bonding parameters utilized during the ball bonding are selected such that excess ball material passes is squashed outward beyond the capillary tip and overflows the periphery of the bond pad thereby completely covering and sealing the bond pad. The described structure works well to protect aluminum and other bond pads that are subject to corrosion if left exposed. In one preferred arrangement the capillary used to form the ball bond includes a cavity arrangement that molds a central portion of the ball bond to form a good intermetallic bond between the bond pad and the bonding wire.

Abstract translation: 描述了利用球接头来保护接合焊盘的焊盘密封装置和方法。 在用于球接合的接合线的远端处形成相对大的自由空气球。 将自由空气球压在接合焊盘上并进行超声波焊接以形成球接合。 选择在球接合期间使用的接合参数，使得过量的球材料通过挤压到毛细管尖端之外并溢出接合焊盘的周边，从而完全覆盖和密封接合焊盘。 所描述的结构很好地保护铝和其他接触焊盘，如果暴露在外，则会受到腐蚀。 在一个优选的布置中，用于形成球接头的毛细管包括一个腔体装置，其模制球接头的中心部分，以在接合焊盘和接合线之间形成良好的金属间键。

公开(公告)号：US06250539B1

公开(公告)日：2001-06-26

申请号：US09408889

申请日：1999-09-29

Applicant: Shinichi Nishiura ,  Tooru Mochida

Inventor： Shinichi Nishiura ,  Tooru Mochida

IPC: B23K3100

CPC classification number: H01L24/85 ,  B23K20/007 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/05599 ,  H01L2224/4809 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/78301 ,  H01L2224/78303 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A method, which is for forming accurate low wire loop shapes or short wire loop shapes which are stable and which have a high shape retention force in devices in which height differences between first and second bonding points are small and the wiring distance is short, including the steps of bonding a ball formed at the end of the wire extending out of the capillary to the first bonding point, raising the capillary while delivering the wire, moving the capillary toward the second bonding point, and then raising the capillary diagonally upward.

Abstract translation: 一种方法，其用于形成稳定的并且在第一和第二接合点之间的高度差小且布线距离短的装置中具有高的形状保持力的精确的低线环形状或短线环形状，包括 将形成在从毛细管延伸出毛细管的端部的球接合到第一接合点的步骤，在输送线材的同时升高毛细管，将毛细管移动到第二接合点，然后将毛细管向上倾斜上升。

公开(公告)号：US11869868B2

公开(公告)日：2024-01-09

申请号：US18051571

申请日：2022-11-01

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Elmer Cunanan Bayron

IPC: H01L23/00

CPC classification number: H01L24/78 ,  H01L24/85 ,  H01L2224/78303 ,  H01L2224/78343 ,  H01L2224/85205

Abstract: A multifaceted capillary that can be used in a wire-bonding machine to create a multi-segment wire-bond is disclosed. The multifaceted capillary is shaped to apply added pressure and thickness to an outer segment of the multi-segment wire-bond that is closest to the wire loop. The added pressure eliminates a gap under a heel portion of the multi-segment wire-bond and the added thickness increases a mechanical strength of the heel portion. As a result, a pull test of the multi-segment wire-bond may be higher than a single-segment wire-bond and the multi-segment wire-bond may resist cracking, lifting, or breaking.

公开(公告)号：US20180005981A1

公开(公告)日：2018-01-04

申请号：US15707632

申请日：2017-09-18

Applicant: ROHM CO., LTD.

Inventor： Motoharu HAGA ,  Shingo YOSHIDA ,  Yasumasa KASUYA ,  Toichi NAGAHARA ,  Akihiro KIMURA ,  Kenji FUJII

IPC: H01L23/00 ,  H01L23/495 ,  B23K20/10 ,  H01L21/56 ,  B23K20/24 ,  B23K20/00 ,  H01L23/31

CPC classification number: H01L24/85 ,  B23K20/005 ,  B23K20/10 ,  B23K20/24 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49582 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/83 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48451 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48847 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/78303 ,  H01L2224/78307 ,  H01L2224/78309 ,  H01L2224/83 ,  H01L2224/8314 ,  H01L2224/83192 ,  H01L2224/83439 ,  H01L2224/838 ,  H01L2224/85 ,  H01L2224/85045 ,  H01L2224/85051 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/8592 ,  H01L2224/85986 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01066 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01204 ,  H01L2924/01205 ,  H01L2924/01206 ,  H01L2924/013 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/10162 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19107 ,  H01L2924/20752 ,  H01L2924/20757 ,  H01L2924/3512 ,  H01L2924/01026 ,  H01L2924/00 ,  H01L2924/2076 ,  H01L2924/207 ,  H01L2924/20753 ,  H01L2924/20756 ,  H01L2924/20758 ,  H01L2924/00015

Abstract: A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

公开(公告)号：US20150162296A1

公开(公告)日：2015-06-11

申请号：US14406997

申请日：2013-05-21

Applicant: Seiko Instruments Inc.

Inventor： Tomomitsu Risaki ,  Shoji Nakanishi ,  Hitomi Sakurai ,  Koichi Shimazaki

IPC: H01L23/00 ,  H01L23/60 ,  H01L23/522

CPC classification number: H01L24/45 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/60 ,  H01L24/05 ,  H01L24/48 ,  H01L24/78 ,  H01L24/85 ,  H01L27/0296 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05011 ,  H01L2224/05013 ,  H01L2224/05014 ,  H01L2224/05085 ,  H01L2224/05095 ,  H01L2224/05096 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05599 ,  H01L2224/45144 ,  H01L2224/48451 ,  H01L2224/48463 ,  H01L2224/78301 ,  H01L2224/78303 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/35 ,  H01L2224/05099 ,  H01L2924/00015

Abstract: In order to inhibit a crack under a pad opening without increasing a chip size, a protective film (6) includes a pad opening (9) that exposes a part of a topmost layer metal film (3). The pad opening (9) is rectangular and square, and has an opening width of d0. A second metal film (2) has an opening under the pad opening (9). The opening is rectangular and square, and has an opening width of d4. A distance between an opening edge of the protective film (6) and an opening edge of the second metal film (2) is d3. The second metal film (2) has a rectangular donut shape, and protrudes to an inner side of the pad opening (9) by the distance d3.

Abstract translation: 为了在不增加芯片尺寸的情况下抑制焊盘开口处的裂纹，保护膜（6）包括暴露最顶层金属膜（3）的一部分的焊盘开口（9）。 垫片开口（9）为矩形和正方形，开口宽度为d0。 第二金属膜（2）在焊盘开口（9）的下方具有开口。 开口为矩形和正方形，开口宽度为d4。 保护膜（6）的开口边缘与第二金属膜（2）的开口边缘之间的距离为d3。 第二金属膜（2）具有矩形环状，并且在垫片开口（9）的内侧突出距离d3。