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    METHODS OF FORMING MEMORY CELLS AND ARRAYS OF MAGNETIC MEMORY CELL STRUCTURES, AND RELATED MEMORY CELLS AND MEMORY CELL STRUCTURES
    1.
    发明申请
    METHODS OF FORMING MEMORY CELLS AND ARRAYS OF MAGNETIC MEMORY CELL STRUCTURES, AND RELATED MEMORY CELLS AND MEMORY CELL STRUCTURES 有权
    形成记忆细胞的方法和磁记忆细胞结构的阵列，以及相关记忆细胞和记忆细胞结构

    公开(公告)号：US20140070342A1

    公开(公告)日：2014-03-13

    申请号：US13614212

    申请日：2012-09-13

    Applicant: Gurtej S. Sandhu ,  Witold Kula ,  Wayne I. Kinney

    Inventor： Gurtej S. Sandhu ,  Witold Kula ,  Wayne I. Kinney

    IPC: H01L43/12 ,  H01L29/82

    CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: Methods of forming memory cells, magnetic memory cell structures, and arrays of magnetic memory cell structures are disclosed. Embodiments of the methods include patterning a precursor structure to form a stepped structure including at least an upper discrete feature section and a lower feature section with a broader width, length, or both than the upper discrete feature section. The method uses patterning acts directed along a first axis, e.g., an x-axis, and then along a second axis, e.g., a y-axis, that is perpendicular to or about perpendicular to the first axis. The patterning acts may therefore allow for more unifoimity between a plurality of formed, neighboring cell core structures, even at dimensions below about thirty nanometers. Magnetic memory structures and memory cell arrays are also disclosed.

    Abstract translation: 公开了形成存储单元，磁存储单元结构和磁存储单元结构阵列的方法。 方法的实施例包括图案化前体结构以形成包括至少上部离散特征部分和具有更宽的宽度，长度或两者比较高离散特征部分的下部特征部分的阶梯式结构。 该方法使用沿着第一轴线例如x轴，然后沿着垂直于第一轴线或垂直于第一轴线的第二轴线，例如y轴定向的图案化动作。 因此，即使在低于约三十纳米的尺寸下，图案化动作也可允许在多个形成的相邻电池芯结构之间的更大的均匀性。 还公开了磁存储器结构和存储单元阵列。

    Methods of forming magnetic memory cells
    2.
    发明授权
    Methods of forming magnetic memory cells 有权
    形成磁记忆单元的方法

    公开(公告)号：US09373775B2

    公开(公告)日：2016-06-21

    申请号：US13614212

    申请日：2012-09-13

    Applicant: Gurtej S. Sandhu ,  Witold Kula ,  Wayne I. Kinney

    Inventor： Gurtej S. Sandhu ,  Witold Kula ,  Wayne I. Kinney

    IPC: H01L27/20 ,  H01L43/08 ,  H01L43/12 ,  H01L27/22

    CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: Methods of forming memory cells, magnetic memory cell structures, and arrays of magnetic memory cell structures are disclosed. Embodiments of the methods include patterning a precursor structure to form a stepped structure including at least an upper discrete feature section and a lower feature section with a broader width, length, or both than the upper discrete feature section. The method uses patterning acts directed along a first axis, e.g., an x-axis, and then along a second axis, e.g., a y-axis, that is perpendicular to or about perpendicular to the first axis. The patterning acts may therefore allow for more unifoimity between a plurality of formed, neighboring cell core structures, even at dimensions below about thirty nanometers. Magnetic memory structures and memory cell arrays are also disclosed.

    Abstract translation: 公开了形成存储单元，磁存储单元结构和磁存储单元结构阵列的方法。 方法的实施例包括图案化前体结构以形成包括至少上部离散特征部分和具有更宽的宽度，长度或两者比较高离散特征部分的下部特征部分的阶梯式结构。 该方法使用沿着第一轴线例如x轴，然后沿着垂直于第一轴线或垂直于第一轴线的第二轴线，例如y轴定向的图案化动作。 因此，即使在低于约三十纳米的尺寸下，图案化动作也可允许在多个形成的相邻电池芯结构之间的更大的均匀性。 还公开了磁存储器结构和存储单元阵列。

    Memory cells, semiconductor device structures, memory systems, and methods of fabrication
    3.
    发明授权
    Memory cells, semiconductor device structures, memory systems, and methods of fabrication 有权
    存储单元，半导体器件结构，存储器系统和制造方法

    公开(公告)号：US08923038B2

    公开(公告)日：2014-12-30

    申请号：US13527173

    申请日：2012-06-19

    Applicant: Witold Kula ,  Gurtej S. Sandhu ,  Stephen J. Kramer

    Inventor： Witold Kula ,  Gurtej S. Sandhu ,  Stephen J. Kramer

    IPC: G11C11/15 ,  G11C11/00 ,  H01L29/82

    CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/12

    Abstract: Methods of forming magnetic memory cells are disclosed. Magnetic and non-magnetic materials are formed into a primal precursor structure in an initial stress state of essentially no strain, compressive strain, or tensile strain. A stress-compensating material, e.g., a non-sacrificial, conductive material, is formed to be disposed on the primal precursor structure to form a stress-compensated precursor structure in a net beneficial stress state. Thereafter, the stress-compensated precursor structure may be patterned to form a cell core of a memory cell. The net beneficial stress state of the stress-compensated precursor structure lends to formation of one or more magnetic regions, in the cell core, exhibiting a vertical magnetic orientation without deteriorating a magnetic strength of the one or more magnetic regions. Also disclosed are memory cells, memory cell structures, semiconductor device structures, and spin torque transfer magnetic random access memory (STT-MRAM) systems.

    Abstract translation: 公开了形成磁存储器单元的方法。 磁性和非磁性材料在基本上没有应变，压缩应变或拉伸应变的初始应力状态下形成原始前体结构。 形成应力补偿材料，例如非牺牲导电材料，以设置在原始前体结构上以在净有益应力状态下形成应力补偿前体结构。 此后，应力补偿前体结构可以被图案化以形成存储单元的单元芯。 应力补偿前体结构的净有益应力状态有助于在电池芯中形成一个或多个磁性区域，呈现垂直磁性取向而不会使一个或多个磁性区域的磁强度恶化。 还公开了存储器单元，存储单元结构，半导体器件结构和自旋转矩传递磁随机存取存储器（STT-MRAM）系统。

    MEMORY CELLS, SEMICONDUCTOR DEVICE STRUCTURES, MEMORY SYSTEMS, AND METHODS OF FABRICATION
    4.
    发明申请
    MEMORY CELLS, SEMICONDUCTOR DEVICE STRUCTURES, MEMORY SYSTEMS, AND METHODS OF FABRICATION 有权
    存储器单元，半导体器件结构，存储器系统和制造方法

    公开(公告)号：US20130334630A1

    公开(公告)日：2013-12-19

    申请号：US13527173

    申请日：2012-06-19

    Applicant: Witold Kula ,  Gurtej S. Sandhu ,  Stephen J. Kramer

    Inventor： Witold Kula ,  Gurtej S. Sandhu ,  Stephen J. Kramer

    IPC: H01L29/82 ,  H01L21/8246

    CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/12

    Abstract: Methods of forming magnetic memory cells are disclosed. Magnetic and non-magnetic materials are formed into a primal precursor structure in an initial stress state of essentially no strain, compressive strain, or tensile strain. A stress-compensating material, e.g., a non-sacrificial, conductive material, is formed to be disposed on the primal precursor structure to form a stress-compensated precursor structure in a net beneficial stress state. Thereafter, the stress-compensated precursor structure may be patterned to form a cell core of a memory cell. The net beneficial stress state of the stress-compensated precursor structure lends to formation of one or more magnetic regions, in the cell core, exhibiting a vertical magnetic orientation without deteriorating a magnetic strength of the one or more magnetic regions. Also disclosed are memory cells, memory cell structures, semiconductor device structures, and spin torque transfer magnetic random access memory (STT-MRAM) systems.

    Abstract translation: 公开了形成磁存储器单元的方法。 磁性和非磁性材料在基本上没有应变，压缩应变或拉伸应变的初始应力状态下形成原始前体结构。 形成应力补偿材料，例如非牺牲导电材料，以设置在原始前体结构上以在净有益应力状态下形成应力补偿前体结构。 此后，应力补偿前体结构可以被图案化以形成存储单元的单元芯。 应力补偿前体结构的净有益应力状态有助于在电池芯中形成一个或多个磁性区域，呈现垂直磁性取向而不会使一个或多个磁性区域的磁强度恶化。 还公开了存储器单元，存储单元结构，半导体器件结构和自旋转矩传递磁随机存取存储器（STT-MRAM）系统。

    Pitch multiplication spacers and methods of forming the same
    7.
    发明授权
    Pitch multiplication spacers and methods of forming the same 有权
    间距倍增器及其形成方法

    公开(公告)号：US09099314B2

    公开(公告)日：2015-08-04

    申请号：US12827506

    申请日：2010-06-30

    Applicant: Gurtej S. Sandhu ,  Kirk D. Prall

    Inventor： Gurtej S. Sandhu ,  Kirk D. Prall

    IPC: H01L21/3213 ,  H01L21/033 ,  H01L21/308 ,  H01L21/3205

    CPC classification number: H01L21/67063 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/32053 ,  H01L21/32134

    Abstract: Spacers in a pitch multiplication process are formed without performing a spacer etch. Rather, the mandrels are formed over a substrate and then the sides of the mandrels are reacted, e.g., in an oxidization, nitridation, or silicidation step, to form a material that can be selectively removed relative to the unreacted portions of the mandrel. The unreacted portions are selectively removed to leave a pattern of free-standing spacers. The free-standing spacers can serve as a mask for subsequent processing steps, such as etching the substrate.

    Abstract translation: 在不执行间隔物蚀刻的情况下形成间距倍增过程中的间隔物。 相反，心轴形成在衬底上，然后心轴的侧面例如在氧化，氮化或硅化步骤中反应，以形成相对于心轴的未反应部分可以选择性去除的材料。 选择性地去除未反应部分以留下独立间隔物的图案。 独立的间隔物可以用作后续处理步骤的掩模，例如蚀刻基底。

    Electrically conductive laminate structure containing graphene region
    9.
    发明授权
    Electrically conductive laminate structure containing graphene region 有权
    导电层压结构

    公开(公告)号：US08946903B2

    公开(公告)日：2015-02-03

    申请号：US12833074

    申请日：2010-07-09

    Applicant: Gurtej S. Sandhu

    Inventor： Gurtej S. Sandhu

    IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01B13/00 ,  H01L21/768 ,  H01L23/532

    CPC classification number: H01L23/53276 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53209 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Some embodiments include electrical interconnects. The interconnects may contain laminate structures having a graphene region sandwiched between non-graphene regions. In some embodiments the graphene and non-graphene regions may be nested within one another. In some embodiments an electrically insulative material may be over an upper surface of the laminate structure, and an opening may extend through the insulative material to a portion of the laminate structure. Electrically conductive material may be within the opening and in electrical contact with at least one of the non-graphene regions of the laminate structure. Some embodiments include methods of forming electrical interconnects in which non-graphene material and graphene are alternately formed within a trench to form nested non-graphene and graphene regions.

    Abstract translation: 一些实施例包括电互连。 互连可以包含层压结构，其具有夹在非石墨烯区域之间的石墨烯区域。 在一些实施例中，石墨烯和非石墨烯区域可以彼此嵌套。 在一些实施例中，电绝缘材料可以在层压结构的上表面之上，并且开口可以延伸穿过绝缘材料到层压结构的一部分。 导电材料可以在开口内并且与层压结构的非石墨烯区域中的至少一个电接触。 一些实施例包括形成电互连的方法，其中在沟槽内交替形成非石墨烯材料和石墨烯以形成嵌套的非石墨烯和石墨烯区域。

    Reactive metal implated oxide based memory
    10.
    发明授权
    Reactive metal implated oxide based memory 有权
    反应性金属注入氧化物基记忆

    公开(公告)号：US08772841B2

    公开(公告)日：2014-07-08

    申请号：US13616307

    申请日：2012-09-14

    Applicant: D.V. Nirmal Ramaswamy ,  Gurtej S. Sandhu

    Inventor： D.V. Nirmal Ramaswamy ,  Gurtej S. Sandhu

    IPC: H01L29/66 ,  H01L29/94 ,  H01L21/70 ,  H01L27/108

    CPC classification number: H01L45/08 ,  G11C13/0007 ,  H01L45/145 ,  H01L45/165

    Abstract: Methods, devices, and systems associated with oxide based memory can include a method of forming an oxide based memory cell. Forming an oxide based memory cell can include forming a first conductive element, forming an oxide over the first conductive element, implanting a reactive metal into the oxide, and forming a second conductive element over the oxide.

    Abstract translation: 与基于氧化物的存储器相关联的方法，装置和系统可以包括形成基于氧化物的存储器单元的方法。 形成基于氧化物的存储单元可以包括形成第一导电元件，在第一导电元件上形成氧化物，将活性金属注入到氧化物中，以及在氧化物上形成第二导电元件。

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