Invention Grant
US09007818B2 Memory cells, semiconductor device structures, systems including such cells, and methods of fabrication
有权
存储单元，半导体器件结构，包括这种单元的系统以及制造方法
- Patent Title: Memory cells, semiconductor device structures, systems including such cells, and methods of fabrication
- Patent Title (中): 存储单元，半导体器件结构，包括这种单元的系统以及制造方法
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Application No.: US13427339Application Date: 2012-03-22
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Publication No.: US09007818B2Publication Date: 2015-04-14
- Inventor: Gurtej S. Sandhu , Wayne I. Kinney
- Applicant: Gurtej S. Sandhu , Wayne I. Kinney
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/00 ; G11C11/15 ; H01L43/08
Abstract:
Memory cells including cell cores having free regions are disclosed. The free regions exhibit a strain that affects a magnetization orientation within the cell core. A stressor structure may exert a stress upon at least a portion of the cell core to effect the strain state of the free region. Also disclosed are semiconductor device structures and systems including such memory cells as well as methods for forming such memory cells.
Public/Granted literature
- US20130250661A1 MEMORY CELLS, SEMICONDUCTOR DEVICE STRUCTURES, SYSTEMS INCLUDING SUCH CELLS, AND METHODS OF FABRICATION Public/Granted day:2013-09-26
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