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公开(公告)号：US20240243159A1
公开(公告)日：2024-07-18
申请号：US18535731
申请日：2023-12-11
Inventor： Jeong Woo PARK , Sang Hoon KIM , Dongwoo SUH
IPC: H01L27/146
CPC classification number: H01L27/14649 , H01L27/14636 , H01L27/14683
Abstract: The present disclosure relates to an image sensor including a silicon substrate having a first conductivity type, and a read out integrated circuit (ROIC) and a photodetector disposed on the silicon substrate. The ROIC and the photodetector are spaced apart from each other in a first direction parallel to a top surface of the silicon substrate. The photodetector includes a first germanium pattern having the first conductivity type and a semiconductor pattern having a second conductivity type different from the first conductivity type, which are laminated in a direction perpendicular to the top surface of the silicon substrate. The first germanium pattern contacts the silicon substrate.
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公开(公告)号：US20230402529A1
公开(公告)日：2023-12-14
申请号：US18327417
申请日：2023-06-01
Inventor： Sang Hoon KIM , Dongwoo SUH , JINHA KIM , Jeong Woo PARK , Seong Hyun LEE , Wangjoo LEE
IPC: H01L29/66 , H01L29/423 , H01L29/10 , H01L29/786
CPC classification number: H01L29/66545 , H01L29/66553 , H01L29/42392 , H01L29/1054 , H01L29/78696
Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming alternating layers, where a silicon germanium layer and a silicon layer are alternately stacked, on a substrate, etching the alternating layers to form a fin structure protruding onto the substrate and then forming a silicon nitride film on a surface and a sidewall of each of the alternating layers having the fin structure, sequentially forming a dummy gate and a silicon oxide film on the alternating layers with the silicon nitride film therebetween and then forming a gate spacer on a sidewall of the dummy gate, etching the silicon nitride film upward exposed, and then, etching the alternating layers by using the silicon oxide film, and selectively forming an inner spacer in a sidewall of each of silicon germanium layers among the silicon germanium layers and silicon layers of the etched alternating layers.
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公开(公告)号：US20180331504A1
公开(公告)日：2018-11-15
申请号：US16030417
申请日：2018-07-09
Inventor： In Gyoo KIM , Gyungock KIM , Sang Hoon KIM
CPC classification number: H01S5/3223 , H01S5/021 , H01S5/041 , H01S5/0424 , H01S5/0425 , H01S5/105 , H01S5/187 , H01S5/3086 , H01S5/3224 , H01S5/4006
Abstract: Provided is a laser device according to an embodiment of the inventive concept. The laser device includes: a semiconductor substrate; a germanium single crystal layer on the semiconductor substrate; and a pumping light source disposed on the germanium single crystal layer and configured to emit light toward the germanium single crystal layer, wherein the germanium single crystal layer receives the light to thereby output laser.
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公开(公告)号：US20170269298A1
公开(公告)日：2017-09-21
申请号：US15607726
申请日：2017-05-30
Inventor： Gyungock KIM , Hyundai PARK , In Gyoo KIM , Sang Hoon KIM , Ki Seok JANG , Sang Gi KIM , Jiho JOO , Yongseok CHOI , Hyuk Je KWON , Jaegyu PARK , Sun Ae KIM , Jin Hyuk OH , myung joon KWACK
IPC: G02B6/12 , G02B6/13 , H01L27/15 , G02B6/42 , H01L21/762
CPC classification number: G02B6/12004 , G02B6/13 , G02B6/4206 , G02B6/4214 , H01L21/762 , H01L27/15 , H01L31/167
Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
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公开(公告)号：US20160211402A1
公开(公告)日：2016-07-21
申请号：US14812981
申请日：2015-07-29
Inventor： Jiho JOO , Gyungock KIM , Myungjoon KWACK , Sang Hoon KIM , Sun Ae KIM , In Gyoo KIM , Jaegyu PARK , Jin Hyuk OH , Ki Seok JANG
IPC: H01L31/109 , H01L31/0224 , H01L31/0352 , H01L31/0304 , H01L31/028
CPC classification number: H01L31/022416 , H01L31/03529 , H01L31/1075 , H01L31/1808 , Y02E10/50 , Y02P70/521
Abstract: Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.
Abstract translation: 提供了一种光电探测器，其包括衬底，衬底上的第一掺杂区域，具有环形结构的第二掺杂区域，其中第二掺杂区域设置在衬底中，围绕第一掺杂区域并且与 第一掺杂区域，第一掺杂区域上的光吸收层，光吸收层上的接触层，接触层上的第一电极和第二掺杂区域上的第二电极。
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Patent Agency Ranking
公开(公告)号：US20140175510A1
公开(公告)日：2014-06-26
申请号：US14194723
申请日：2014-03-01
Inventor： Dongwoo SUH , Sang Hoon KIM , Gyungock KIM , JiHo JOO
IPC: H01L31/028
CPC classification number: H01L31/028 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02667 , H01L31/103 , H01L31/1808 , H01L31/1872 , Y02E10/50 , Y02P70/521
Abstract: Provided is a germanium photodetector having a germanium epitaxial layer formed without using a buffer layer and a method of fabricating the same. In the method, an amorphous germanium layer is formed on a substrate. The amorphous germanium layer is heated up to a high temperature to form a crystallized germanium layer. A germanium epitaxial layer is formed on the crystallized germanium layer.
Abstract translation: 提供了具有不使用缓冲层形成的锗外延层的锗光电检测器及其制造方法。 在该方法中，在基板上形成无定形锗层。 将非晶锗层加热至高温以形成结晶的锗层。 在结晶的锗层上形成锗外延层。
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公开(公告)号：US20150146755A1
公开(公告)日：2015-05-28
申请号：US14279839
申请日：2014-05-16
Inventor： In Gyoo KIM , Sang Hoon KIM , Jaegyu PARK , Gyungock KIM , Ki Seok JANG
CPC classification number: H01S5/1021 , G02B6/12 , G02B6/122 , G02B6/1228 , G02B6/136 , G02B2006/12061 , G02B2006/12147 , H01S5/021 , H01S5/026 , H01S5/2086 , H01S5/2272 , H01S5/3223 , H01S2301/176 , H01S2304/00
Abstract: Provided is a method of fabricating a semiconductor laser. The method includes: providing a semiconductor substrate including a first region and a second region; forming a silicon single crystal layer in the second region of the semiconductor substrate by using a selective epitaxial growth process; forming an optical coupler by using the silicon single crystal layer; and forming a laser core structure including a germanium single crystal layer in the first region of the semiconductor substrate by using a selective epitaxial growth process.
Abstract translation: 提供一种制造半导体激光器的方法。 该方法包括：提供包括第一区域和第二区域的半导体衬底; 通过使用选择性外延生长工艺在半导体衬底的第二区域中形成硅单晶层; 通过使用硅单晶层形成光耦合器; 以及通过选择性外延生长工艺在半导体衬底的第一区域中形成包括锗单晶层的激光芯结构。
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公开(公告)号：US20220359749A1
公开(公告)日：2022-11-10
申请号：US17564688
申请日：2021-12-29
Inventor： Seong Hyun LEE , Dongwoo SUH , Sang Hoon KIM , Jeong Woo PARK , Tae Moon ROH
Abstract: Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate including monocrystalline silicon or polycrystalline silicon, a first insulating layer on the semiconductor substrate, the first insulating layer including a local region in which a portion of an upper surface of the first insulating layer is recessed, a channel layer provided in the local region of the first insulating layer, a silicide provided on one side surface of the channel layer, a control gate provided on the channel layer, a gate insulating film provided between the channel layer and the control gate, and a polarity control gate arranged so as to overlap an interface between the channel layer and the silicide, wherein the polarity control gate is spaced apart from the control gate, and the channel layer includes monocrystalline silicon.
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公开(公告)号：US20140105235A1
公开(公告)日：2014-04-17
申请号：US13776428
申请日：2013-02-25
Inventor： In Gyoo KIM , Gyungock KIM , Sang Hoon KIM , Ki Seok JANG , JiHo JOO
IPC: H01S5/30
CPC classification number: H01S5/3031 , G02B6/12004 , H01S5/021 , H01S5/026 , H01S5/0425 , H01S5/3223 , Y10S438/933
Abstract: Provided are a semiconductor laser and a method of manufacturing the same. The method includes: providing a substrate including a buried oxide layer; forming patterns, which includes an opening part to expose the substrate, by etching the buried oxide layer; forming a germanium single crystal layer in the opening part; and forming an optical coupler, which is adjacent to the germanium single crystal layer, on the substrate.
Abstract translation: 提供半导体激光器及其制造方法。 该方法包括：提供包括掩埋氧化物层的衬底; 形成图案，其包括通过蚀刻所述掩埋氧化物层而露出所述衬底的开口部分; 在开口部分形成锗单晶层; 并在基片上形成与锗单晶层相邻的光耦合器。
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10.发明申请LOW-VOLTAGE HIGH-GAIN HIGH-SPEED GERMANIUM PHOTO DETECTOR AND METHOD OF FABRICATING THE SAME 有权低电压高增益高速锗片检测器及其制造方法公开(公告)号：US20140048772A1
公开(公告)日：2014-02-20
申请号：US13949081
申请日：2013-07-23
Inventor： Gyungock KIM , Sang Hoon KIM , Ki Seok JANG , In Gyoo KIM , Jin Hyuk OH , Sun Ae KIM
CPC classification number: H01L33/06 , B82Y20/00 , H01L31/035227 , H01L31/035254 , H01L31/107 , H01L33/0054 , Y10S977/762 , Y10S977/774 , Y10S977/954
Abstract: Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires.
Abstract translation: 提供一种基于硅晶片的锗半导体光电检测器，其被配置为能够在相对低的电压下提供高增益，高灵敏度和高速度的特性。 可以在硅晶片上提供基于锗的载体倍增层（例如，单个锗层或锗和硅超晶格层），并且可以在其上提供锗电荷层，可以在电荷上提供锗吸收层 层，并且可以在吸收层上设置多晶硅第二接触层。 吸收层可以被配置为包括锗量子点或线。
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