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公开(公告)号：US20170294762A1
公开(公告)日：2017-10-12
申请号：US15230313
申请日：2016-08-05
发明人： In Gyoo KIM , Gyungock KIM , Sang Hoon KIM
CPC分类号： H01S5/3223 , H01S5/021 , H01S5/041 , H01S5/0424 , H01S5/0425 , H01S5/105 , H01S5/187 , H01S5/3086 , H01S5/3224 , H01S5/4006
摘要： Provided is a laser device according to an embodiment of the inventive concept. The laser device includes: a semiconductor substrate; a germanium single crystal layer on the semiconductor substrate; and a pumping light source disposed on the germanium single crystal layer and configured to emit light toward the germanium single crystal layer, wherein the germanium single crystal layer receives the light to thereby output laser.
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公开(公告)号：US20170261705A1
公开(公告)日：2017-09-14
申请号：US15607717
申请日：2017-05-30
发明人： Gyungock KIM , Hyundai PARK , In Gyoo KIM , Sang Hoon KIM , Ki Seok JANG , Sang Gi KIM , Jiho JOO , Yongseok CHOI , Hyuk Je KWON , Jaegyu PARK , Sun Ae KIM , Jin Hyuk OH , Myung Joon KWACK
IPC分类号： G02B6/42 , H01L27/15 , H01L31/167 , H01L21/762 , G02B6/13 , G02B6/12
CPC分类号： G02B6/12004 , G02B6/13 , G02B6/4206 , G02B6/4214 , H01L21/762 , H01L27/15 , H01L31/167
摘要： Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
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公开(公告)号：US20160260805A1
公开(公告)日：2016-09-08
申请号：US15056660
申请日：2016-02-29
发明人： Sang Hoon KIM , Gyungock KIM , In Gyoo KIM
IPC分类号： H01L29/161 , H01L21/3105 , H01L21/02 , H01L29/06 , H01L21/311
CPC分类号： H01L29/161 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： Provided is a germanium-on-insulator substrate. The germanium-on-insulator substrate includes a bulk silicon substrate, an oxide film which is disposed on the bulk silicon substrate and has a first region exposing a portion of the bulk silicon substrate, a silicon layer which covers a portion of the top surface of the oxide film and does not cover the first region, a germanium layer which contacts the bulk silicon substrate exposed through the first region and is disposed on the oxide film, and an insulating layer which covers the oxide film and the silicon layer and exposes the top surface of the germanium layer.
摘要翻译： 提供绝缘体上的锗基板。 绝缘体上的衬底包括体硅衬底，氧化膜，其设置在体硅衬底上并且具有暴露本体硅衬底的一部分的第一区域;覆盖顶部表面的一部分的硅层; 氧化膜并且不覆盖第一区域，接触通过第一区域暴露的体硅衬底并设置在氧化物膜上的锗层，以及覆盖氧化物膜和硅层并暴露顶部的绝缘层 锗层的表面。
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公开(公告)号：US20180331504A1
公开(公告)日：2018-11-15
申请号：US16030417
申请日：2018-07-09
发明人： In Gyoo KIM , Gyungock KIM , Sang Hoon KIM
CPC分类号： H01S5/3223 , H01S5/021 , H01S5/041 , H01S5/0424 , H01S5/0425 , H01S5/105 , H01S5/187 , H01S5/3086 , H01S5/3224 , H01S5/4006
摘要： Provided is a laser device according to an embodiment of the inventive concept. The laser device includes: a semiconductor substrate; a germanium single crystal layer on the semiconductor substrate; and a pumping light source disposed on the germanium single crystal layer and configured to emit light toward the germanium single crystal layer, wherein the germanium single crystal layer receives the light to thereby output laser.
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公开(公告)号：US20180127276A1
公开(公告)日：2018-05-10
申请号：US15803162
申请日：2017-11-03
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , Gachon University of Industry-Academic Cooperation Foundation
发明人： Tae-Young KIM , In-Kyu YOU , Bit Na KIM , In Gyoo KIM , Sung-Hoon JUNG , Seung-Jun PARK
IPC分类号： C01B32/198 , H01M4/62 , H01M4/36 , C01B32/184 , B01D71/02 , B01J35/02
CPC分类号： C01B32/198 , B01D71/021 , B01J35/02 , C01B32/184 , C01P2004/30 , H01G11/24 , H01G11/32 , H01G11/34 , H01G11/86 , H01M4/366 , H01M4/625
摘要： A method for preparing a three-dimensional graphene structure, and an energy storage device are provided, the method including forming a graphene precursor by heating a carbohydrate and a gas generator, forming a graphene structure having a cavity therein by carbonizing the graphene precursor, and forming nanopores in the graphene structure, wherein the nanopores pass through an outer surface and an inner surface of the graphene structure, and are connected with the cavity.
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公开(公告)号：US20170269298A1
公开(公告)日：2017-09-21
申请号：US15607726
申请日：2017-05-30
发明人： Gyungock KIM , Hyundai PARK , In Gyoo KIM , Sang Hoon KIM , Ki Seok JANG , Sang Gi KIM , Jiho JOO , Yongseok CHOI , Hyuk Je KWON , Jaegyu PARK , Sun Ae KIM , Jin Hyuk OH , myung joon KWACK
IPC分类号： G02B6/12 , G02B6/13 , H01L27/15 , G02B6/42 , H01L21/762
CPC分类号： G02B6/12004 , G02B6/13 , G02B6/4206 , G02B6/4214 , H01L21/762 , H01L27/15 , H01L31/167
摘要： Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
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公开(公告)号：US20160211402A1
公开(公告)日：2016-07-21
申请号：US14812981
申请日：2015-07-29
发明人： Jiho JOO , Gyungock KIM , Myungjoon KWACK , Sang Hoon KIM , Sun Ae KIM , In Gyoo KIM , Jaegyu PARK , Jin Hyuk OH , Ki Seok JANG
IPC分类号： H01L31/109 , H01L31/0224 , H01L31/0352 , H01L31/0304 , H01L31/028
CPC分类号： H01L31/022416 , H01L31/03529 , H01L31/1075 , H01L31/1808 , Y02E10/50 , Y02P70/521
摘要： Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.
摘要翻译： 提供了一种光电探测器，其包括衬底，衬底上的第一掺杂区域，具有环形结构的第二掺杂区域，其中第二掺杂区域设置在衬底中，围绕第一掺杂区域并且与 第一掺杂区域，第一掺杂区域上的光吸收层，光吸收层上的接触层，接触层上的第一电极和第二掺杂区域上的第二电极。
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公开(公告)号：US20230252333A1
公开(公告)日：2023-08-10
申请号：US18105080
申请日：2023-02-02
发明人： Min Su KIM , In Gyoo KIM , Ki Won MOON , Jeong Ho BANG , Kyung Hyun BAEK , Jung Jin JU
IPC分类号： G06N10/40
CPC分类号： G06N10/40
摘要： An apparatus for processing a photonic qubit signal includes a first optical unit to receive and transmit a time-modulated signal divided into two sections distinguished with respect to time and correspond to |0 and |1 states of single-photon qubit information; a second optical unit to form a first path-signal pattern by distributing the time-modulated signal into two spatial paths; a third optical unit to form a second path-signal pattern from the first path-signal pattern by inducing a relative delay and controlling a phase difference between signals on the two spatial paths; a fourth optical unit to form a third path-signal pattern through optical interference of the second path-signal pattern; and a fifth optical unit to control a phase difference between signals on the two spatial paths and form a fourth path-signal pattern through optical interference of the third path-signal pattern.
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公开(公告)号：US20180053604A1
公开(公告)日：2018-02-22
申请号：US15633071
申请日：2017-06-26
发明人： In Gyoo KIM , In-Kyu YOU , Bit Na KIM , Ji Hwan SUL , Yong Suk YANG , Seok Hun KANG , Sunghoon HONG
CPC分类号： H01G11/30 , C01B32/198 , C02F1/46109 , C02F2001/46128 , C02F2001/46138 , C25B11/0478 , H01B1/04 , H01B1/22 , H01G11/28 , H01G11/86
摘要： Disclosed are an apparatus for manufacturing electrodes and a method of manufacturing electrodes. The method of manufacturing electrodes includes providing a metal substrate having first and second surfaces opposite to each other, performing a patterning process on the first surface of the metal substrate, coating an electrode material on the first surface of the metal substrate, after the patterning process, and irradiating the electrode material, which is coated on the metal substrate, with light. The patterning process includes forming a plurality of holes to penetrate the metal substrate or forming a plurality of grooves to have a shape recessed from the first surface toward the second surface.
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10.发明申请公开(公告)号：US20160202504A1
公开(公告)日：2016-07-14
申请号：US14848077
申请日：2015-09-08
发明人： In Gyoo KIM , Gyungock KIM , Sang Hoon KIM
IPC分类号： G02F1/025
CPC分类号： G02F1/025 , G02F2001/0155 , G02F2001/0157
摘要： Provided is an optical modulator including an optical waveguide and an optical modulation part integrated on the optical waveguide that is clad in oxide silicon and has silicon as core by using a bulk silicon wafer in place of an silicon-on-insulator (SOI) used for a typical optical waveguide and optical modulator and using complementary metal oxide semiconductor (CMOS) and thermal oxide film formation processes, and a fabrication method thereof
摘要翻译： 提供了一种光学调制器，其包括光波导和光调制部分，其集成在光波导上，其被包覆在氧化物硅中并且通过使用体硅晶片代替绝缘体上硅（SOI）而具有硅作为核， 典型的光波导和光学调制器，并使用互补金属氧化物半导体（CMOS）和热氧化膜形成工艺及其制造方法
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