Abstract:
A superluminescent diode and a method for implementing the same, wherein the method includes growing a first epi layer on top of an SI (semi-insulating substrate); re-growing a butt based on the first epi layer; forming a tapered SSC (spot size converter) on the re-grown butt layer; forming an optical waveguide on an active area that is based on the first epi layer and on an SSC area that is based on the tapered SSC; forming an RWG on the optical waveguide; and forming a p-type electrode and an n-type electrode.
Abstract:
An apparatus for processing a photonic qubit signal includes a first optical unit to receive and transmit a time-modulated signal divided into two sections distinguished with respect to time and correspond to |0 and |1 states of single-photon qubit information; a second optical unit to form a first path-signal pattern by distributing the time-modulated signal into two spatial paths; a third optical unit to form a second path-signal pattern from the first path-signal pattern by inducing a relative delay and controlling a phase difference between signals on the two spatial paths; a fourth optical unit to form a third path-signal pattern through optical interference of the second path-signal pattern; and a fifth optical unit to control a phase difference between signals on the two spatial paths and form a fourth path-signal pattern through optical interference of the third path-signal pattern.
Abstract:
A superluminescent diode and a method for implementing the same, wherein the method includes growing a first epi layer on top of an SI (semi-insulating substrate); re-growing a butt based on the first epi layer; forming a tapered SSC (spot size converter) on the re-grown butt layer; forming an optical waveguide on an active area that is based on the first epi layer and on an SSC area that is based on the tapered SSC; forming an RWG on the optical waveguide; and forming a p-type electrode and an n-type electrode.
Abstract:
In a luminescent diode and a method for manufacturing the same, a planar buried heterostructure (PBH) and a ridge waveguide structure are combined, so that the luminescent diode can be operated to generate a high output of 100 mW or more at low current. Further, it is possible to reduce electro-optic loss. In addition, the luminescent diode is applied to a wavelength tunable external cavity laser, so that it is possible to provide an external cavity laser having excellent output characteristics.
Abstract:
Disclosed is a technology related to an optical waveguide which is insensitive to an ambient temperature and is capable of adjusting a wavelength error due to a manufacturing processing deviation. The optical waveguide includes: a clad layer positioned on a substrate; a core layer positioned between the substrate and the clad layer, and including patterns positioned in a first region and a second region; and a wavelength adjusting unit positioned in the first region between the substrate and the clad layer, and configured to adjust a wavelength of an optical signal propagated through patterns passing through the first region based on received electric energy, in which the clad layer includes a material having a Thermo-Optic Coefficient (TOC) with an opposite sign to that of a material included in the core layer.
Abstract:
Disclosed is a technology related to an optical waveguide which is insensitive to an ambient temperature and is capable of adjusting a wavelength error due to a manufacturing processing deviation. The optical waveguide includes: a clad layer positioned on a substrate; a core layer positioned between the substrate and the clad layer, and including patterns positioned in a first region and a second region; and a wavelength adjusting unit positioned in the first region between the substrate and the clad layer, and configured to adjust a wavelength of an optical signal propagated through patterns passing through the first region based on received electric energy, in which the clad layer includes a material having a Thermo-Optic Coefficient (TOC) with an opposite sign to that of a material included in the core layer.