Abstract:
Provided are an optical waveguide device and a laser apparatus including the same. The optical waveguide device includes a peripheral part disposed on an edge region of a substrate, an air pocket disposed on a central region of the substrate within the peripheral part, an optical waveguide comprising a core layer, which is disposed on an upper portion of the substrate within the air pocket to extend in a first direction, and an electrode on the core layer, and a plurality of hinges disposed on the air pocket to connect the optical waveguide to the peripheral part in a second direction crossing the first direction.
Abstract:
Disclosed are a wavelength-selectable laser diode and an optical communication apparatus including the same. The wavelength-selectable laser diode includes a substrate, which includes a gain region, a tuning region spaced apart from the gain region, and a phase adjusting region between the tuning region and the gain region, a waveguide layer on the substrate, a clad layer on the waveguide layer, and gratings disposed on the substrate or the clad layer in the gain region and the tuning region.
Abstract:
Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The superluminescent diode includes a substrate having an active region and an optical mode size conversion region, waveguides including an ridge waveguide in the active region and a deep ridge waveguide in the optical mode size conversion region connected to the active waveguide, an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge waveguide and the deep ridge waveguide on the substrate, and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers outside the active waveguide.
Abstract:
A laser module includes a Transmitter Optical Sub-Assembly (TOSA) and a heat radiating means. The TOSA generates light by an electrical signal and transmits the generated light through an optical fiber. The heat radiating means is in contact with the TOSA to discharge heat generated by the TOSA.
Abstract:
Provided is a distributed Bragg reflector tunable laser diode including a substrate provided with a gain section having an active waveguide from which a gain of laser light is obtained and a distributed reflector section having a passive waveguide connected to the active waveguide, wherein the distributed reflector section includes gratings disposed on or under the passive waveguide, a current injection electrode disposed on the passive waveguide and configured to provide a current into the passive waveguide to electrically tune a wavelength of the laser light, and a heater electrode disposed on the current injection electrode and configured to heat the passive waveguide to thermally tune the wavelength of the laser light, wherein the gratings, the current injection electrode, and the heater electrode vertically overlap each other.
Abstract:
In a luminescent diode and a method for manufacturing the same, a planar buried heterostructure (PBH) and a ridge waveguide structure are combined, so that the luminescent diode can be operated to generate a high output of 100 mW or more at low current. Further, it is possible to reduce electro-optic loss. In addition, the luminescent diode is applied to a wavelength tunable external cavity laser, so that it is possible to provide an external cavity laser having excellent output characteristics.
Abstract:
Provided herein is a tunable external cavity laser comprising: a gain medium configured to create an optical signal; an external reflector configured to be coupled to the gain medium, and to comprise a Bragg grating; and a phase control section configured to adjust a phase of an entire laser, but to adjust a wavelength of the laser to a longer wavelength than a peak reflectivity of the external reflector.
Abstract:
A distributed feedback-laser diode may include a substrate, a lower cladding layer having a grating on the substrate, an active layer disposed on the lower cladding layer, a first upper cladding layer disposed on the active layer, a phase-shift region extending in a first direction on the first upper cladding layer, and a ridge waveguide layer extending in a second direction crossing the first direction on the phase-shift region.
Abstract:
Disclosed are a distributed reflector laser diode and a method for manufacturing the same. The diode includes a substrate including a DFB region and a DBR region contacting the DFB region, an active layer on the substrate of the DFB region, a first lattice on the active layer, a second lattice provided on the substrate of the DBR region and thicker than the first lattice, an upper clad layer on the first lattice and the second lattice, an ohmic contact layer on the upper clad layer of the DFB region, an upper electrode on the ohmic contact layer, an insulating layer on the clad layer of the DBR region, and a heater layer on the insulating layer.
Abstract:
An optical device according to the embodiment of the inventive concept includes a waveguide path including a light generation region, a wavelength variable region, and a light modulation region, a first light waveguide layer provided in the light generation region to generate light, a second light waveguide layer provided in the wavelength variable region and connected to the first light waveguide layer, a ring-shaped third light waveguide layer provided in the light modulation region and connected to the second light waveguide layer, and first and second light modulation electrodes spaced apart from each other with the light modulation region therebetween. Here, the first light modulation electrode, the third light waveguide layer, and the second light modulation electrode vertically overlap each other.