公开(公告)号：US20240243549A1

公开(公告)日：2024-07-18

申请号：US18413680

申请日：2024-01-16

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Su Hwan OH ,  Kisoo KIM ,  Hongseung KIM

IPC: H01S5/125 ,  H01S5/024 ,  H01S5/042 ,  H01S5/34

CPC classification number: H01S5/125 ,  H01S5/02453 ,  H01S5/0421 ,  H01S5/04256 ,  H01S5/3407

Abstract: Disclosed are a distributed reflector laser diode and a method for manufacturing the same. The diode includes a substrate including a DFB region and a DBR region contacting the DFB region, an active layer on the substrate of the DFB region, a first lattice on the active layer, a second lattice provided on the substrate of the DBR region and thicker than the first lattice, an upper clad layer on the first lattice and the second lattice, an ohmic contact layer on the upper clad layer of the DFB region, an upper electrode on the ohmic contact layer, an insulating layer on the clad layer of the DBR region, and a heater layer on the insulating layer.