Abstract:
Provided is a method of manufacturing a distributed feedback laser diode array (DFB-LDA) including: forming active layers corresponding to a plurality of channels using electron beam lithography; forming a plurality of mask patterns between the active layers; and growing the active layers using electron beam lithography, wherein the opening widths of the plurality of mask patterns corresponding to the plurality of channels are different from one another.
Abstract:
Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The superluminescent diode includes a substrate having an active region and an optical mode size conversion region, waveguides including an ridge waveguide in the active region and a deep ridge waveguide in the optical mode size conversion region connected to the active waveguide, an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge waveguide and the deep ridge waveguide on the substrate, and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers outside the active waveguide.
Abstract:
Provided is a distributed Bragg reflector tunable laser diode including a substrate provided with a gain section having an active waveguide from which a gain of laser light is obtained and a distributed reflector section having a passive waveguide connected to the active waveguide, wherein the distributed reflector section includes gratings disposed on or under the passive waveguide, a current injection electrode disposed on the passive waveguide and configured to provide a current into the passive waveguide to electrically tune a wavelength of the laser light, and a heater electrode disposed on the current injection electrode and configured to heat the passive waveguide to thermally tune the wavelength of the laser light, wherein the gratings, the current injection electrode, and the heater electrode vertically overlap each other.
Abstract:
The present disclosure relates to an apparatus for obtaining 3D information using a photodetector array. The apparatus for obtaining 3D information includes: a light source unit configured to generate an optical signal of a predetermined wavelength band; a light transmission optical lens unit provided on a path of the optical signal and configured to emit the optical signal output from the light source unit in parallel or at a predetermined angle; an optical scanning unit configured to scan the light output from the light transmission optical lens unit to a surface of an object to be measured; a light reception optical lens unit configured to collect the light reflected from the surface of the object; and a photodetection unit configured to convert collected optical signals into respective electrical signals by arraying one or more photodetectors such that light reception portions thereof are collected at a center.
Abstract:
Provided is a laser diode and a method for manufacturing the same. The diode includes a substrate including a DBR region having a channel hole, an active region, and a phase shift region, an optical waveguide provided on the substrate and extending from the active region to the DBR region, a lower insulation layer disposed on the optical waveguide, upper electrodes disposed on the lower insulation layer, and a heat blocking layer disposed in the channel hole of the DBR region and thermally separating the optical waveguide from the substrate.
Abstract:
Provided is a laser device according to embodiments of the inventive concept comprising a substrate including a gain region, a phase control region, and a tuning region arranged along a first direction, the substrate having an air gap which extends from the phase control region to the tuning region, an upper clad layer on the substrate, a waveguide structure extending in the first direction between the upper clad layer and the substrate, a first upper electrode disposed on the upper surface of the upper clad layer of the tuning region, and a lower electrode disposed on a lower surface of the substrate and extending from the gain region to the tuning region, wherein the air gap may have a larger width than the waveguide in a second direction crossing the first direction.
Abstract:
A light comb generating device according to a disclosed embodiment includes a light source for generating light in a reference wavelength band and outputting the generated light, and an optical comb generator for generating a light comb having a reference comb interval from the output light, wherein the light source changes a wavelength of the output light as much as a reference frequency interval for every reference time interval, the light comb is generated within a wavelength range of the reference frequency interval, and the reference wavelength band may be at least about 3 μm and no greater than about 30 μm.
Abstract:
Provided are an optical waveguide device and a laser apparatus including the same. The optical waveguide device includes a peripheral part disposed on an edge region of a substrate, an air pocket disposed on a central region of the substrate within the peripheral part, an optical waveguide comprising a core layer, which is disposed on an upper portion of the substrate within the air pocket to extend in a first direction, and an electrode on the core layer, and a plurality of hinges disposed on the air pocket to connect the optical waveguide to the peripheral part in a second direction crossing the first direction.
Abstract:
Disclosed are a wavelength-selectable laser diode and an optical communication apparatus including the same. The wavelength-selectable laser diode includes a substrate, which includes a gain region, a tuning region spaced apart from the gain region, and a phase adjusting region between the tuning region and the gain region, a waveguide layer on the substrate, a clad layer on the waveguide layer, and gratings disposed on the substrate or the clad layer in the gain region and the tuning region.
Abstract:
Provided is an optical detection device including a first ohmic contact layer of a first conductivity type, a second ohmic contact layer of a second conductivity type, and first and second mesa structures stacked between the first and second ohmic contact layers. The first mesa structure includes an electric field buffer layer; and a diffusion layer formed in the electric field buffer layer. The second mesa structure includes a light absorbing layer and a grading layer on the light absorbing layer.