Abstract:
Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The superluminescent diode includes a substrate having an active region and an optical mode size conversion region, waveguides including an ridge waveguide in the active region and a deep ridge waveguide in the optical mode size conversion region connected to the active waveguide, an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge waveguide and the deep ridge waveguide on the substrate, and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers outside the active waveguide.
Abstract:
A resonant-structured optical transistor includes a nonlinear medium which generates a second harmonic wave through second-order nonlinear interaction with an incident pump wave, and generates an amplified signal wave and a converted wave having a difference frequency through second-order nonlinear interaction between the incident signal wave and the second harmonic wave, a first mirror which transmits, to the nonlinear medium, the pump wave or the signal wave, and reflects the second harmonic wave on one surface of the nonlinear medium, and a second mirror which transmits the pump wave, the signal wave, or the converted wave, and reflects the second harmonic wave on another surface of the nonlinear medium. The pump wave is incident to the nonlinear medium through the first mirror in a first operation mode, and the pump wave and the signal wave are incident to the nonlinear medium through the first mirror in a second operation mode.
Abstract:
A light emitting diode includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked on a substrate, and a first electrode connected to the first semiconductor layer. The first electrode includes an edge electrode including first and second edge portions opposite to each other, and a line electrode including first and second line portions respectively extending from the first and second edge portions. The edge electrode has a closed loop-shape. A distance between the first line portion and the second edge portion is equal to or less than a quarter of a length of the first line portion. A distance between the second line portion and the first edge portion is equal to or less than a quarter of a length of the second line portion.