RESONANT STRUCTURED OPTICAL TRANSISTOR
    2.
    发明申请

    公开(公告)号:US20190163033A1

    公开(公告)日:2019-05-30

    申请号:US16200241

    申请日:2018-11-26

    Inventor: Jongbae KIM

    Abstract: A resonant-structured optical transistor includes a nonlinear medium which generates a second harmonic wave through second-order nonlinear interaction with an incident pump wave, and generates an amplified signal wave and a converted wave having a difference frequency through second-order nonlinear interaction between the incident signal wave and the second harmonic wave, a first mirror which transmits, to the nonlinear medium, the pump wave or the signal wave, and reflects the second harmonic wave on one surface of the nonlinear medium, and a second mirror which transmits the pump wave, the signal wave, or the converted wave, and reflects the second harmonic wave on another surface of the nonlinear medium. The pump wave is incident to the nonlinear medium through the first mirror in a first operation mode, and the pump wave and the signal wave are incident to the nonlinear medium through the first mirror in a second operation mode.

    LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE PACKAGE
    3.
    发明申请
    LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE PACKAGE 有权
    发光二极管和发光二极管封装

    公开(公告)号:US20140048840A1

    公开(公告)日:2014-02-20

    申请号:US13970825

    申请日:2013-08-20

    CPC classification number: H01L33/62 H01L33/20 H01L33/38 H01L2224/16

    Abstract: A light emitting diode includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked on a substrate, and a first electrode connected to the first semiconductor layer. The first electrode includes an edge electrode including first and second edge portions opposite to each other, and a line electrode including first and second line portions respectively extending from the first and second edge portions. The edge electrode has a closed loop-shape. A distance between the first line portion and the second edge portion is equal to or less than a quarter of a length of the first line portion. A distance between the second line portion and the first edge portion is equal to or less than a quarter of a length of the second line portion.

    Abstract translation: 发光二极管包括依次层叠在基板上的第一半导体层,有源层和第二半导体层以及与第一半导体层连接的第一电极。 第一电极包括包括彼此相对的第一和第二边缘部分的边缘电极,以及包括分别从第一和第二边缘部分延伸的第一和第二线部分的线电极。 边缘电极具有闭环形状。 第一线部分和第二边缘部分之间的距离等于或小于第一线部分的长度的四分之一。 第二线部分和第一边缘部分之间的距离等于或小于第二线部分的长度的四分之一。

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