公开(公告)号：US20150090906A1

公开(公告)日：2015-04-02

申请号：US14481176

申请日：2014-09-09

Applicant: Electronics and Telecommunications Research Institute

Inventor： Nam Je KIM ,  Kyung Hyun PARK ,  Sang Pil HAN ,  Ki Won MOON ,  Jeong Woo PARK

IPC: G02F1/35

CPC classification number: G02F1/353 ,  G02F1/3534 ,  G02F2203/13 ,  H01L31/173

Abstract: Provided herein is terahertz continuous wave emitting device having: a plurality of laser light sources generating a plurality of laser lights; and an absorption area formed between the plurality of laser light sources in order to adjust interaction of the plurality of laser lights, wherein the absorption area is configured to have a photo diode, an antenna integrated into the photo diode.

Abstract translation: 本文提供的太赫兹连续波发射装置具有：多个激光源产生多个激光; 以及形成在所述多个激光光源之间的吸收区域，以便调整所述多个激光器的相互作用，其中所述吸收区域被配置为具有光电二极管，集成到所述光电二极管中的天线。

公开(公告)号：US20140175306A1

公开(公告)日：2014-06-26

申请号：US14023257

申请日：2013-09-10

Applicant: Electronics and Telecommunications Research Institute

Inventor： Namje KIM ,  Sang-Pil HAN ,  Kyung Hyun PARK ,  Han-Cheol RYU ,  Hyunsung KO ,  Jeong Woo PARK

IPC: G01J9/04

CPC classification number: G01J9/04

Abstract: The inventive concept relates to a beating signal monitoring module and a terahertz wave generation device and an optical signal monitoring device that including the beating signal monitoring module. The beating signal monitoring module includes a nonlinear unit generating an optical signal including a FWM light in response to a beating signal generated from a first light and a second light; a filter unit separating the FWM light from the optical signal and outputting the separated FWM light; and a monitoring unit monitoring the beating signal using the separated FWM light. The beating signal monitoring module and a terahertz wave generation device and an optical signal monitoring device that including the beating signal monitoring module can effectively monitor a beating signal being generated by two lasers using a Four Wave Mixing signal.

Abstract translation: 本发明构思涉及一种包括跳动信号监测模块的跳动信号监测模块和太赫兹波发生装置以及光信号监测装置。 跳动信号监控模块包括：非线性单元，响应于从第一光和第二光产生的拍打信号，产生包括FWM光的光信号; 滤波器单元，将FWM光与光信号分离，并输出分离的FWM光; 以及监视单元，使用分离的FWM光监视拍动信号。 跳动信号监测模块和太赫兹波发生装置以及包括跳动信号监测模块的光信号监测装置可以使用四波混频信号有效地监测由两个激光器产生的跳动信号。

公开(公告)号：US20240282368A1

公开(公告)日：2024-08-22

申请号：US18443221

申请日：2024-02-15

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Sung Min HWANG ,  Dong Woo SUH ,  Wang Joo LEE ,  Jeong Woo PARK

IPC: G11C11/54 ,  G11C11/56

CPC classification number: G11C11/54 ,  G11C11/5685

Abstract: Disclosed is a binary neural network hardware apparatus. The binary neural network hardware apparatus includes a sense amplifier configured to compare a bit line voltage of a bit line with a predetermined reference voltage; an input unit configured to input the bit line voltage to the sense amplifier; and a threshold voltage regulator configured to be connected to an artificial intelligence binary synapse through the bit line and change the bit line voltage in multiple levels.

公开(公告)号：US20210172872A1

公开(公告)日：2021-06-10

申请号：US17099907

申请日：2020-11-17

Applicant: HYUNDAI MOTOR COMPANY ,  KIA MOTORS CORPORATION ,  ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Ha Seung SEONG ,  Ho Jin LEE ,  Il Min LEE ,  Ki Won MOON ,  Eui Su LEE ,  Dong Woo PARK ,  Jeong Woo PARK ,  Kyung Hyun PARK ,  Hyun Soo KIM

IPC: G01N21/3581 ,  G01B11/06

Abstract: A measurement apparatus for measuring a coating amount of a slurry according to the present disclosure includes a light emitter configured to irradiate terahertz wave onto a release paper coated with the slurry, a light receiver configured to receive the terahertz wave, which is irradiated from the light emitter and passes through the release paper coated with the slurry, to obtain a power of the terahertz wave, and a calculating part configured to calculate a thickness of an electrode, formed from the slurry applied to the release paper, based on the power of the terahertz wave received by the light receiver.

公开(公告)号：US20200335639A1

公开(公告)日：2020-10-22

申请号：US16848826

申请日：2020-04-14

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Dong Woo PARK ,  Kyung Hyun PARK ,  Jeong Woo PARK ,  Jun Hwan SHIN ,  Eui Su LEE ,  Hyun Soo KIM ,  Kiwon MOON ,  IL MIN LEE

IPC: H01L29/872 ,  H01L29/205 ,  H01L29/47 ,  H01L21/306 ,  H01L21/285 ,  H01L29/66

Abstract: A Schottky barrier diode includes a substrate, a first semiconductor layer formed on the substrate, a second semiconductor layer formed on the first semiconductor layer, and a metal layer formed on the second semiconductor layer to form a Schottky barrier, wherein the first semiconductor layer and the second semiconductor layer are formed of different materials, and a conduction band offset between the first semiconductor layer and the second semiconductor layer is less than a set value.

公开(公告)号：US20140061475A1

公开(公告)日：2014-03-06

申请号：US13802198

申请日：2013-03-13

Applicant: Electronics and Telecommunications Research Institute

Inventor： Han-Cheol RYU ,  Namje KIM ,  Sang-Pil Han ,  Kyung Hyun PARK ,  Hyunsung KO ,  Jeong Woo PARK

IPC: G01B11/06

CPC classification number: G01B11/06

Abstract: A contactless thickness measuring apparatus is provided which includes an terahertz transmitter configured to receive the first optical path signal from the coupler and to generate a terahertz continuous wave using the first optical signal and an applied bias; an optical delay line configured to delay the second optical path signal output from the coupler; and an terahertz receiver configured to receive the terahertz continuous wave penetrating a sample and to detect an optical current using the terahertz continuous wave and the second optical path signal delayed. A thickness of the sample is a value corresponding to the optical current which phase value becomes a constant regardless of a plurality of measurement frequencies.

Abstract translation: 提供了一种非接触式厚度测量装置，其包括太赫兹发射器，其被配置为从耦合器接收第一光路信号并使用第一光信号和施加的偏压产生太赫兹连续波; 光延迟线，被配置为延迟从耦合器输出的第二光路信号; 以及太赫兹接收器，被配置为接收穿透样本的太赫兹连续波，并且使用太赫兹连续波和第二光路信号延迟来检测光电流。 样品的厚度是与光电流相对应的值，该相位值成为常数，而与多个测量频率无关。

公开(公告)号：US20220359749A1

公开(公告)日：2022-11-10

申请号：US17564688

申请日：2021-12-29

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Seong Hyun LEE ,  Dongwoo SUH ,  Sang Hoon KIM ,  Jeong Woo PARK ,  Tae Moon ROH

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/45 ,  H01L27/12

Abstract: Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate including monocrystalline silicon or polycrystalline silicon, a first insulating layer on the semiconductor substrate, the first insulating layer including a local region in which a portion of an upper surface of the first insulating layer is recessed, a channel layer provided in the local region of the first insulating layer, a silicide provided on one side surface of the channel layer, a control gate provided on the channel layer, a gate insulating film provided between the channel layer and the control gate, and a polarity control gate arranged so as to overlap an interface between the channel layer and the silicide, wherein the polarity control gate is spaced apart from the control gate, and the channel layer includes monocrystalline silicon.

公开(公告)号：US20240243159A1

公开(公告)日：2024-07-18

申请号：US18535731

申请日：2023-12-11

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Jeong Woo PARK ,  Sang Hoon KIM ,  Dongwoo SUH

IPC: H01L27/146

CPC classification number: H01L27/14649 ,  H01L27/14636 ,  H01L27/14683

Abstract: The present disclosure relates to an image sensor including a silicon substrate having a first conductivity type, and a read out integrated circuit (ROIC) and a photodetector disposed on the silicon substrate. The ROIC and the photodetector are spaced apart from each other in a first direction parallel to a top surface of the silicon substrate. The photodetector includes a first germanium pattern having the first conductivity type and a semiconductor pattern having a second conductivity type different from the first conductivity type, which are laminated in a direction perpendicular to the top surface of the silicon substrate. The first germanium pattern contacts the silicon substrate.

公开(公告)号：US20230402529A1

公开(公告)日：2023-12-14

申请号：US18327417

申请日：2023-06-01

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Sang Hoon KIM ,  Dongwoo SUH ,  JINHA KIM ,  Jeong Woo PARK ,  Seong Hyun LEE ,  Wangjoo LEE

IPC: H01L29/66 ,  H01L29/423 ,  H01L29/10 ,  H01L29/786

CPC classification number: H01L29/66545 ,  H01L29/66553 ,  H01L29/42392 ,  H01L29/1054 ,  H01L29/78696

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming alternating layers, where a silicon germanium layer and a silicon layer are alternately stacked, on a substrate, etching the alternating layers to form a fin structure protruding onto the substrate and then forming a silicon nitride film on a surface and a sidewall of each of the alternating layers having the fin structure, sequentially forming a dummy gate and a silicon oxide film on the alternating layers with the silicon nitride film therebetween and then forming a gate spacer on a sidewall of the dummy gate, etching the silicon nitride film upward exposed, and then, etching the alternating layers by using the silicon oxide film, and selectively forming an inner spacer in a sidewall of each of silicon germanium layers among the silicon germanium layers and silicon layers of the etched alternating layers.

公开(公告)号：US20170256656A1

公开(公告)日：2017-09-07

申请号：US15341448

申请日：2016-11-02

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jeong Woo PARK ,  Kyung Hyun PARK ,  Hyun Sung KO

IPC: H01L29/872 ,  H01L29/205 ,  H01L21/306 ,  H01L21/02 ,  H01L23/66 ,  H01L29/66

CPC classification number: H01L29/872 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/30612 ,  H01L23/66 ,  H01L29/0657 ,  H01L29/205 ,  H01L29/66143 ,  H01L29/66212 ,  H01L51/0579 ,  H01L2223/6677

Abstract: Provided herein is a Schottky diode including: a first semiconductor layer; an intermediate layer provided over the first semiconductor layer; a second semiconductor layer provided over the intermediate layer; an anode provided over the second semiconductor layer; and a cathode provided over the first semiconductor layer, wherein in a sectional view, a width of the second semiconductor layer is greater than a width of the intermediate layer.