公开(公告)号：US20170256656A1

公开(公告)日：2017-09-07

申请号：US15341448

申请日：2016-11-02

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jeong Woo PARK ,  Kyung Hyun PARK ,  Hyun Sung KO

IPC: H01L29/872 ,  H01L29/205 ,  H01L21/306 ,  H01L21/02 ,  H01L23/66 ,  H01L29/66

CPC classification number: H01L29/872 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/30612 ,  H01L23/66 ,  H01L29/0657 ,  H01L29/205 ,  H01L29/66143 ,  H01L29/66212 ,  H01L51/0579 ,  H01L2223/6677

Abstract: Provided herein is a Schottky diode including: a first semiconductor layer; an intermediate layer provided over the first semiconductor layer; a second semiconductor layer provided over the intermediate layer; an anode provided over the second semiconductor layer; and a cathode provided over the first semiconductor layer, wherein in a sectional view, a width of the second semiconductor layer is greater than a width of the intermediate layer.

公开(公告)号：US20150179842A1

公开(公告)日：2015-06-25

申请号：US14307856

申请日：2014-06-18

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jeong Woo PARK ,  Sang Pil HAN ,  Dae Yong KIM ,  Hyun Sung KO ,  Nam Je KIM ,  Ki Won MOON ,  Il Min LEE ,  Eui Su LEE ,  Kyung Hyun PARK

IPC: H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/11 ,  H01L31/10

Abstract: Disclosed is a rectifier capable of performing a high speed rectifying operation, and includes: a first semiconductor layer; a second semiconductor layer; and a third semiconductor layer, in which the first semiconductor layer and the third semiconductor layer are formed of semiconductor layers having the same type, and the second semiconductor layer is formed between the first semiconductor layer and the third semiconductor layer, is formed of a semiconductor layer having a different type from that of the first semiconductor layer and the third semiconductor layer, and is formed in graded doped state.

Abstract translation: 公开了一种能够执行高速整流操作的整流器，包括：第一半导体层; 第二半导体层; 以及第三半导体层，其中第一半导体层和第三半导体层由具有相同类型的半导体层形成，并且第二半导体层形成在第一半导体层和第三半导体层之间，由半导体 层与第一半导体层和第三半导体层的类型不同，并且以渐变掺杂状态形成。

公开(公告)号：US20150102222A1

公开(公告)日：2015-04-16

申请号：US14481287

申请日：2014-09-09

Applicant: Electronics and Telecommunications Research Institute

Inventor： Nam Je KIM ,  Kyung Hyun PARK ,  Sang Pil HAN ,  Ki Won MOON ,  Il Min LEE ,  Hyun Sung KO

IPC: G01J1/42 ,  G21K5/02

CPC classification number: G01J1/42 ,  G01J3/42 ,  H01L31/09 ,  Y10T29/49018

Abstract: Disclosed is a photomixer for generating and detecting a terahertz continuous wave, including: an optical conductor to which beating light is incident; and a plurality of antenna feeding electrodes formed on both side surfaces of the optical conductor, and configured to receive a current of a terahertz frequency.

Abstract translation: 公开了一种用于产生和检测太赫兹连续波的光混合器，包括：光导体，其中入射光; 以及多个天线馈电电极，形成在所述光导体的两个侧表面上，并被配置为接收太赫兹频率的电流。