公开(公告)号：US06548811B1

公开(公告)日：2003-04-15

申请号：US09504044

申请日：2000-02-14

申请人： Kuniyasu Nakamura ,  Hiroshi Kakibayashi

发明人： Kuniyasu Nakamura ,  Hiroshi Kakibayashi

IPC分类号： H01J3704

CPC分类号： H01J37/26 ,  H01J37/295 ,  H01J2237/1506

摘要： In order to detect automatically at a high speed and a high probability rate the crystal defects and shape abnormalities in a specimen over a wide area of said specimen, a transmission electron microscope apparatus is employed which has an electron source, a first electrostatic lens, a second electrostatic lens, a third electrostatic lens, a first condenser lens, a second condenser lens, a pre-field objective lens, a deflection coil, a first projection lens, a second projection lens, a third projection lens, a first image shift coil, a second image shift coil, and an image acquisition apparatus, etc. The detection of crystal defects is made definite by observing the specimen image at the same location by multiple variations of the electron beam incidence direction using the deflection coil. In addition, the crystal defects are detected at a high speed by linking the deflection ratios of the deflection coil and of the first image shift coil and the second image shift coil, and carrying out compensation so that image shifts on the image acquisition apparatus due to the multiple electron beam incidence directions are mutually cancelled.

摘要翻译： 为了在所述样本的广泛区域上以高速度和高概率率自动检测样品中的晶体缺陷和形状异常，使用透射型电子显微镜装置，其具有电子源，第一静电透镜， 第二静电透镜，第三静电透镜，第一聚光透镜，第二聚光透镜，预场物镜，偏转线圈，第一投影透镜，第二投影透镜，第三投影透镜，第一图像移动线圈 ，第二图像移位线圈和图像采集装置等。通过使用偏转线圈通过电子束入射方向的多个变化在相同位置观察样本图像来确定晶体缺陷的检测。 此外，通过连接偏转线圈和第一图像移位线圈与第二图像移位线圈的偏转比，高速检测晶体缺陷，并执行补偿，使得图像在图像采集装置上的偏移由于 多个电子束入射方向相互抵消。

公开(公告)号：US20050017178A1

公开(公告)日：2005-01-27

申请号：US10788275

申请日：2004-03-01

申请人： Taro Ogawa ,  Toshiki Sugawara ,  Kazuhiko Hosomi ,  Masataka Shirai ,  Toshio Katsuyama ,  Kaoru Umemura ,  Masaru Izawa ,  Kazuhiko Sagara ,  Hiroshi Kakibayashi

发明人： Taro Ogawa ,  Toshiki Sugawara ,  Kazuhiko Hosomi ,  Masataka Shirai ,  Toshio Katsuyama ,  Kaoru Umemura ,  Masaru Izawa ,  Kazuhiko Sagara ,  Hiroshi Kakibayashi

IPC分类号： G01J3/14 ,  B01J19/00 ,  B01L3/00 ,  G01J3/42 ,  G01N21/05 ,  G01N21/31 ,  G01N21/35 ,  G01N21/3577 ,  G01N37/00

CPC分类号： G01N21/31 ,  B01L3/502715 ,  B01L2200/027 ,  B01L2300/0654 ,  B01L2300/0816 ,  B01L2300/0887 ,  G01N21/05 ,  G01N2021/0346 ,  G01N2021/058 ,  G01N2201/0873

摘要： A micro-spectroscopic measuring device having a structure in which a spectroscopic element made of an array of photonic crystals with defects, flow paths for introducing a sample, and light detecting elements with sensitivity to a band from near infrared to infrared are stacked.

摘要翻译： 具有这样的结构的微分光学测量装置被堆叠，其中由具有缺陷的光子晶体阵列制成的分光元件，用于引入样品的流动路径和对从近红外线到红外线的频带具有灵敏度的光检测元件。

公开(公告)号：US5475218A

公开(公告)日：1995-12-12

申请号：US079273

申请日：1993-06-21

申请人： Hiroshi Kakibayashi ,  Yasuhiro Mitsui ,  Hideo Todokoro ,  Katsuhiro Kuroda

发明人： Hiroshi Kakibayashi ,  Yasuhiro Mitsui ,  Hideo Todokoro ,  Katsuhiro Kuroda

IPC分类号： H01J37/20 ,  G01N23/04 ,  G01Q30/02 ,  G01Q60/10 ,  G01Q80/00 ,  G01R31/305 ,  H01J37/22 ,  H01J37/244 ,  H01J37/28 ,  H01J27/26

CPC分类号： G01R31/305 ,  G01N23/046 ,  G01N2223/419 ,  H01J2237/226

摘要： 3-dimensional observation is carried out on the atomic arrangement and atomic species in a thin-film specimen at an atomic level in order to clarify the existence states of defects and impure atoms in the crystals. For that purposes, the present invention provides an instrument and a method for 3-dimensional observation of an atomic arrangement which are implemented by a system comprising a scanning transmission electron microscope equipped with a field emission electron gun operated at an acceleration voltage of greater than 200 kV, a specimen goniometer/tilting system having a control capability of the nanometer order, a multi-channel electron detector and a computer for executing software for controlling these components and 3-dimensional image-processing software. Point defects and impure atoms, which exist in joint interfaces and contacts in a ULSI device, can thereby be observed. As a result, the causes of bad devices such as current leak and poor voltage resistance can be analyzed at a high accuracy.

摘要翻译： 在原子水平上对薄膜样品中的原子排列和原子种进行3维观察，以澄清晶体中缺陷和不纯原子的存在状态。 为此目的，本发明提供了一种用于三维观察原子排列的仪器和方法，其由包括扫描透射电子显微镜的系统实现，所述扫描透射电子显微镜配备有以大于200的加速电压操作的场致发射电子枪 kV，具有纳米级控制能力的样本测角器/倾斜系统，多通道电子检测器和用于执行用于控制这些部件和3维图像处理软件的软件的计算机。 因此可以观察到存在于ULSI装置中的接合界面和接触中的点缺陷和不纯的原子。 结果，可以高精度地分析诸如电流泄漏和差的耐电压性差的装置的原因。

公开(公告)号：US5552602A

公开(公告)日：1996-09-03

申请号：US398684

申请日：1995-03-06

申请人： Hiroshi Kakibayashi ,  Yasuhiro Mitsui ,  Hideo Tadokoro ,  Katsuhiro Kuroda ,  Masanari Koguchi ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Mikio Ichihashi ,  Shigeto Isakozawa

发明人： Hiroshi Kakibayashi ,  Yasuhiro Mitsui ,  Hideo Tadokoro ,  Katsuhiro Kuroda ,  Masanari Koguchi ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Mikio Ichihashi ,  Shigeto Isakozawa

IPC分类号： G01N23/04 ,  G01R31/305 ,  H01J37/26

CPC分类号： G01R31/305 ,  G01N23/046 ,  G01N2223/419 ,  H01J2237/226

摘要： 3-dimensional observation on the atomic arrangement and atomic species in a thin-film specimen as well as conventional electron microscope observations is carried out at high speed and accuracy by an electron microscope which measures electrons emitted at high angle from the specimen. For that purpose, the present invention provides a scanning transmission electron microscope having an electron detection device comprising a scintillator converting electrons detected thereby to photons, a photoconductive-film converting photons from the scintillator detected thereby to c.a. 1000 times as many electron-hole pairs as these photons (i.d. avalanche multiplication), an electron gun emitting an electron beam toward the photoconductive-film to detect the holes generated therein, and electron deflector electrodes deflecting the electron beam on the photoconductive-film. Avalanche multiplication in the photoconductive-film amplifies the signal of these photons at so high signal-to-noise ratio that the electron microscope in this invention can detect such weak electrons as emitted at high angle from the specimen at high sensitivity and resolution. Therefore this invention enables a scanning transmission electron microscope to obtain for example 3-dimensional image of point defects and impurity elements existing in joint interfaces and contacts in a ULSI device rapidly and accurately.

摘要翻译： 通过电子显微镜以高速和准确的方式对薄膜样品中的原子排列和原子种类进行3维观察，以及常规的电子显微镜观察，测量从样品以高角度发射的电子。 为此目的，本发明提供了一种具有电子检测装置的扫描透射电子显微镜，该电子检测装置包括将由此检测的电子转化为光子的闪烁体，从其检测的闪烁体的光电导膜转换光子至c.a. 与这些光子（i.d.雪崩乘法）一样多的电子 - 空穴对的1000倍，向光电导膜发射电子束以检测其中产生的空穴的电子枪以及偏转电子束在光电导膜上的电子偏转器电极。 光电导膜中的雪崩乘法以如此高的信噪比放大了这些光子的信号，使得本发明的电子显微镜能够以高灵敏度和分辨率从样品中以高角度检测出这样的弱电子。 因此，本发明能够使扫描透射电子显微镜能够快速，准确地获得例如存在于ULSI装置的接合界面和触点中的点缺陷和杂质元素的3维图像。

公开(公告)号：US5453617A

公开(公告)日：1995-09-26

申请号：US262540

申请日：1994-06-20

申请人： Ruriko Tsuneta ,  Hiroshi Kakibayashi

发明人： Ruriko Tsuneta ,  Hiroshi Kakibayashi

IPC分类号： H01J37/20 ,  H01J37/22 ,  H01J37/252 ,  H01J37/26 ,  H01J37/295

CPC分类号： H01J37/252 ,  H01J37/26

摘要： A composition change and a 3-dimensional strained structure in an interface or thin film of a layered thin film specimen are detected with a resolution of atom order and quantitatively analyzed. An accelerated electron beam is impinged upon a specimen cleaved in a wedge form. An equal thickness fringe appearing on a transmitted image is detected. By utilizing such a phenomenon that the distance t of the equal thickness fringe is changed by a lattice plane inclination, angle distribution of lattice plane inclination is measured. An analysis of the strained structure is made. Furthermore, processing is conducted so that the equal thickness fringe may represent only the composition change, and a quantitative analysis of the composition distribution is also made. By estimating the composition change and strained structure in the heterointerface and thin film with a resolution of atom order, relations between characteristics and the composition change and strained structure of a strained superlattice device or the like can be elucidated. Thus, not only defective analysis can be made, but also information concerning optimization of the process condition and device structure is obtained.

摘要翻译： 以原子级数的分辨率检测层状薄膜样品的界面或薄膜中的组成变化和3维应变结构，并进行定量分析。 加速电子束撞击以楔形形式切割的样品。 检测到出现在透射图像上的相同的厚度条纹。 通过利用等厚度边缘的距离t由晶格面倾斜度改变的这种现象，测量晶格面倾角的角度分布。 对应变结构进行了分析。 此外，进行加工，使得相同的厚度条纹可以仅表示组成变化，并且还进行组成分布的定量分析。 通过以原子级数的分辨率估计异质界面和薄膜中的组成变化和应变结构，可以阐明特征与组成变化之间的关系以及应变超晶格装置等的应变结构。 因此，不仅可以进行有缺陷的分析，而且可以获得关于工艺条件和装置结构优化的信息。

公开(公告)号：US5362972A

公开(公告)日：1994-11-08

申请号：US686780

申请日：1991-04-17

申请人： Masamitsu Yazawa ,  Kenji Hiruma ,  Toshio Katsuyama ,  Nobutaka Futigami ,  Hidetoshi Matsumoto ,  Hiroshi Kakibayashi ,  Masanari Koguchi ,  Gerard P. Morgan ,  Kensuke Ogawa

发明人： Masamitsu Yazawa ,  Kenji Hiruma ,  Toshio Katsuyama ,  Nobutaka Futigami ,  Hidetoshi Matsumoto ,  Hiroshi Kakibayashi ,  Masanari Koguchi ,  Gerard P. Morgan ,  Kensuke Ogawa

IPC分类号： C30B25/00 ,  H01L21/20 ,  H01L21/334 ,  H01L21/335 ,  H01L21/336 ,  H01L21/34 ,  H01L29/06 ,  H01L29/12 ,  H01L29/772 ,  H01L29/775 ,  H01L29/861 ,  H01L33/18 ,  H01S5/10 ,  H01S5/34 ,  H01L33/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y20/00 ,  C30B25/005 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/125 ,  H01L29/66454 ,  H01L29/66462 ,  H01L29/66469 ,  H01L29/66522 ,  H01L29/66931 ,  H01L29/7722 ,  H01L29/775 ,  H01L29/861 ,  H01S5/341 ,  H01L27/15 ,  H01L33/18 ,  H01S5/1042

摘要： A field effect transistor and a ballistic transistor using semiconductor whiskers each having a desired diameter and formed at s desired location, a semiconductor vacuum microelectronic device using the same as electron emitting materials, a light emitting device using the same as quantum wires and the like are disclosed.

摘要翻译： 一种场效应晶体管和使用半导体晶须的弹道晶体管，每个半导体晶须具有期望的直径并形成在期望的位置，使用其作为电子发射材料的半导体真空微电子器件，使用该半导体晶须的量子线等的发光器件 披露

公开(公告)号：US06822233B2

公开(公告)日：2004-11-23

申请号：US10346138

申请日：2003-01-17

申请人： Kuniyasu Nakamura ,  Hiroshi Kakibayashi ,  Mikio Ichihashi ,  Shigeto Isakozawa ,  Yuji Sato ,  Takahito Hashimoto

发明人： Kuniyasu Nakamura ,  Hiroshi Kakibayashi ,  Mikio Ichihashi ,  Shigeto Isakozawa ,  Yuji Sato ,  Takahito Hashimoto

IPC分类号： H01J3704

CPC分类号： H01J37/1471 ,  H01J37/28 ,  H01J2237/2802

摘要： A scanning transmission electron microscope (STEM) has an electron source for generating a primary electron beam and an electron illuminating lens system for converging the primary electron beam from the electron source onto a specimen for illumination. An electron deflecting system is provided for scanning the specimen with the primary electron beam. The STEM also has a scattered electron detector for detecting scattered electrons transmitted through the specimen. A projection lens system projects the scattered electrons onto a detection surface of the scattered electron detector. An image displaying device displays the scanning transmission electron microscope image of the specimen using a detection signal from the scattered electron detector. A detection angle changing device for establishes the range of the scattering angle of the scattered electrons detected by the scattered electron detector. This structure enhances the contrast of a desired portion of the specimen under observation for a scanning transmitted image by selective establishment of detection angle ranges for the scattered electron detector.

摘要翻译： 扫描透射电子显微镜（STEM）具有用于产生一次电子束的电子源和用于将来自电子源的一次电子束聚焦到用于照明的样本上的电子照明透镜系统。 提供电子偏转系统用于用一次电子束扫描样本。 STEM还具有散射电子检测器，用于检测通过样品传播的散射电子。 投影透镜系统将散射的电子投射到散射电子检测器的检测表面上。 图像显示装置使用来自散射电子检测器的检测信号来显示样本的扫描透射电子显微镜图像。 一种用于确定由散射电子检测器检测的散射电子的散射角的范围的检测角度改变装置。 该结构通过选择性地建立散射电子检测器的检测角度范围，增强了扫描透射图像观察下的样本的期望部分的对比度。

公开(公告)号：US6051834A

公开(公告)日：2000-04-18

申请号：US126432

申请日：1998-07-30

申请人： Hiroshi Kakibayashi ,  Yasuhiro Mitsui ,  Hideo Todokoro ,  Katsuhiro Kuroda ,  Masanari Koguchi ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Mikio Ichihashi ,  Shigeto Isakozawa ,  Ruriko Tsuneta ,  Kuniyasu Nakamura ,  Kensuke Sekihara ,  Jun Motoike

发明人： Hiroshi Kakibayashi ,  Yasuhiro Mitsui ,  Hideo Todokoro ,  Katsuhiro Kuroda ,  Masanari Koguchi ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Mikio Ichihashi ,  Shigeto Isakozawa ,  Ruriko Tsuneta ,  Kuniyasu Nakamura ,  Kensuke Sekihara ,  Jun Motoike

IPC分类号： H01J37/26 ,  H01J37/28

CPC分类号： H01J37/28 ,  H01J2237/226 ,  H01J2237/2802 ,  H01J2237/2807

摘要： 3-dimensional observation on the atomic arrangement and atomic species in a thin-film specimen are carried out at high speed and accuracy by an electron microscope which measures electrons emitted at high angle from the specimen. A scanning transmission electron microscope has an electron detection device comprising a scintillator converting electrons detected thereby to photons, a photoconductive-film converting photons from the scintillator detected thereby to c.a. 1000 times as many electron-hole pairs as these photons.

摘要翻译： 通过电子显微镜高速准确地进行薄膜样品中的原子排列和原子物质的三维观察，该电子显微镜测量从试样以高角度发射的电子。 扫描透射电子显微镜具有电子检测装置，该电子检测装置包括将由此检测的电子转化为光子的闪烁体，从其检测的闪烁体的光电导膜转换光子至c.a. 这些光子是电子 - 空穴对的1000倍。

公开(公告)号：US5717207A

公开(公告)日：1998-02-10

申请号：US685105

申请日：1996-07-22

申请人： Masanari Koguchi ,  Hiroshi Kakibayashi ,  Hiroyuki Tanaka ,  Shigeto Isakozawa ,  Keiichi Kanehori ,  Tatsuo Makishima ,  Kazutaka Tsuji

发明人： Masanari Koguchi ,  Hiroshi Kakibayashi ,  Hiroyuki Tanaka ,  Shigeto Isakozawa ,  Keiichi Kanehori ,  Tatsuo Makishima ,  Kazutaka Tsuji

IPC分类号： H01J37/22 ,  H01J37/26

CPC分类号： H01J37/265 ,  H01J37/224 ,  H01J2237/2445 ,  H01J2237/2802

摘要： A transmission electron microscope has a camera system that is linked to the optical lens system of the electron microscope by linking the number of electron beam scanning lines of the camera system with the zoom function of the optical lens system. Thus, the number of scanning lines increases as the magnification of the transferred image decreases. Further, the specimen under observation is photographed with a constant number of pixels at all times regardless of the magnification of the transferred image by the optical lens system, thus preventing a reduction in the amount of specimen information.

摘要翻译： 透射电子显微镜具有通过将相机系统的电子束扫描线的数量与光学透镜系统的变焦功能相关联而连接到电子显微镜的光学透镜系统的照相机系统。 因此，扫描线的数量随着传送图像的放大倍数的减小而增加。 此外，无论光学透镜系统的转印图像的放大率如何，始终以恒定数量的像素拍摄观察的样本，从而防止样本信息量的减少。

公开(公告)号：US5332910A

公开(公告)日：1994-07-26

申请号：US159343

申请日：1993-11-30

申请人： Keiichi Haraguchi ,  Kenji Hiruma ,  Kensuke Ogawa ,  Toshio Katsuyama ,  Ken Yamaguchi ,  Toshiyuki Usagawa ,  Masamits Yazawa ,  Toshiaki Masuhara ,  Gerard P. Morgan ,  Hiroshi Kakibayashi

发明人： Keiichi Haraguchi ,  Kenji Hiruma ,  Kensuke Ogawa ,  Toshio Katsuyama ,  Ken Yamaguchi ,  Toshiyuki Usagawa ,  Masamits Yazawa ,  Toshiaki Masuhara ,  Gerard P. Morgan ,  Hiroshi Kakibayashi

IPC分类号： G02B6/42 ,  H01L33/00 ,  H01L33/24 ,  H01S3/067 ,  H01S5/00 ,  H01S5/02 ,  H01S5/06 ,  H01S5/10 ,  H01S5/12 ,  H01S5/18 ,  H01S5/183 ,  H01S5/223 ,  H01S5/32 ,  H01S5/34 ,  H01S5/40 ,  H01S5/42 ,  H01S5/50

CPC分类号： H01L33/24 ,  B82Y20/00 ,  G02B6/4202 ,  H01L33/0062 ,  H01S5/1228 ,  H01S5/183 ,  H01S5/4031 ,  H01S3/06708 ,  H01S5/0028 ,  H01S5/0217 ,  H01S5/0608 ,  H01S5/1042 ,  H01S5/105 ,  H01S5/18 ,  H01S5/223 ,  H01S5/3202 ,  H01S5/3412 ,  H01S5/4006 ,  H01S5/4056 ,  H01S5/423 ,  H01S5/5045

摘要： A semiconductor light-emitting device includes a plurality of semiconductor rods, each of which has a pn junction. The semiconductor rods are formed on a semiconductor substrate such that the plurality of semiconductor rods are arranged at a distance substantially equal to an integer multiple of the wavelength of light emitted from the semiconductor rod. With such devices, various novel optical devices such as a micro-cavity laser of which the threshold current is extremely small and a coherent light-emitting device having no threshold value can be realized.

摘要翻译： 半导体发光器件包括多个半导体棒，每个半导体棒具有pn结。 半导体棒形成在半导体衬底上，使得多个半导体棒被布置成基本上等于从半导体棒发射的光的波长的整数倍的距离。 利用这样的装置，可以实现各种新颖的光学装置，例如阈值电流极小的微腔激光器和不具有阈值的相干发光装置。