公开(公告)号：US08618520B2

公开(公告)日：2013-12-31

申请号：US13547942

申请日：2012-07-12

申请人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

发明人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

IPC分类号： G21K5/00

CPC分类号： H04L29/06 ,  G01N23/225 ,  H01J37/256 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/31745 ,  H04L67/16 ,  H04L69/329

摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

公开(公告)号：US07999240B2

公开(公告)日：2011-08-16

申请号：US12168232

申请日：2008-07-07

申请人： Satoshi Tomimatsu ,  Kaoru Umemura ,  Yuichi Madokoro ,  Yoshimi Kawanami ,  Yasunori Doi

发明人： Satoshi Tomimatsu ,  Kaoru Umemura ,  Yuichi Madokoro ,  Yoshimi Kawanami ,  Yasunori Doi

IPC分类号： H01J37/20

CPC分类号： G01N1/32 ,  G01N1/28 ,  G01N2001/028 ,  G01N2001/045 ,  G01N2001/282 ,  H01J37/20 ,  H01J37/302 ,  H01J37/3056 ,  H01J2237/2007 ,  H01J2237/201 ,  H01J2237/202 ,  H01J2237/31732 ,  H01J2237/31745 ,  H01J2237/31749

摘要： A system for analyzing a semiconductor device, including: a first ion beam apparatus including: a sample stage to mount a sample substrate; a vacuum chamber in which the sample stage is placed; an ion beam irradiating optical system to irradiate the sample substrate; a specimen holder that accommodates a plurality of specimens separated from the sample substrate by the irradiation of the ion beam; and a probe to extract the separated specimen from the sample substrate, and to transfer the separated specimen to the specimen holder; a second ion beam apparatus that carries out a finishing process to the specimen; and an analyzer to analyze the finished specimen, wherein the first ion beam apparatus separates the specimen and the probe in a vacuum condition.

摘要翻译： 一种用于分析半导体器件的系统，包括：第一离子束装置，包括：样品台，用于安装样品基板; 其中放置样品台的真空室; 离子束照射光学系统照射样品基板; 样本保持器，其容纳通过离子束的照射与样品基板分离的多个样本; 以及从所述样品基材中提取分离出的试样并将分离的试样转移到所述试样保持器的探针。 对样品进行精加工的第二离子束装置; 以及用于分析成品样品的分析器，其中所述第一离子束装置在真空条件下分离所述样品和所述探针。

公开(公告)号：US07777183B2

公开(公告)日：2010-08-17

申请号：US11834220

申请日：2007-08-06

申请人： Noriyuki Kaneoka ,  Kaoru Umemura ,  Koji Ishiguro

发明人： Noriyuki Kaneoka ,  Kaoru Umemura ,  Koji Ishiguro

IPC分类号： G01N23/225

CPC分类号： G01N23/225 ,  H01J37/228 ,  H01J37/3056 ,  H01J2237/0455 ,  H01J2237/2482 ,  H01J2237/31745

摘要： A charged particle beam system, a sample processing method, and a semiconductor inspection system enable an accurate detection of a particle in a film without causing LMIS contamination and allow observation with an electron microscope quickly. A particle 65 causing a defect in a film 66 that has been detected with a separate optical inspection system is detected with an optical microscope 43 based on position information acquired by the separate optical inspection system. A sample 31 is processed with a nonmetal ion beam 22 so as to allow observation of the particle 65 with an electron microscope image or an ion microscope image, or ultimate analysis of the particle 65 with an EDX.

摘要翻译： 带电粒子束系统，样品处理方法和半导体检查系统能够精确地检测膜中的颗粒而不引起LMIS污染，并且可以快速用电子显微镜观察。 基于通过单独的光学检查系统获取的位置信息，用光学显微镜43检测导致用单独的光学检查系统检测到的膜66中的缺陷的颗粒65。 用非金属离子束22处理样品31，以便用电子显微镜图像或离子显微镜图像观察颗粒65，或者用EDX对颗粒65进行最终分析。

公开(公告)号：US07725278B2

公开(公告)日：2010-05-25

申请号：US11648615

申请日：2007-01-03

申请人： Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Muneyuki Fukuda ,  Kaoru Umemura

发明人： Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Muneyuki Fukuda ,  Kaoru Umemura

IPC分类号： G01N37/00

CPC分类号： G05B23/0264 ,  H01J2237/208

摘要： After completion of an arbitrary device process, an apparatus for micro-sample extraction extracts a part of a wafer as a micro-sample of a size equal to or larger than a repetition pattern with a probe and places the extracted micro-sample to a micro-sample storage, and the micro-sample storage is stored into an apparatus for micro-sample storage. The wafer is subjected to a post process and an observation desired position is determined in response to a failure analysis requirement. After that, the micro-sample is unloaded from the micro-sample storage by an apparatus for additional processing of the micro-sample and is placed onto an observation sample holder. By performing an additional process in the observation desired position, a failure analysis sample is prepared, and analysis information obtained by an apparatus for failure analysis is output.

摘要翻译： 在完成任意装置处理之后，用于微量样品提取的装置用探针提取一部分晶片作为等于或大于重复图案的尺寸的微量样品，并将提取的微量样品放置在微型 样品存储，并且微量样品储存储存在用于微量样品储存的装置中。 对晶片进行后处理，并且响应于故障分析要求确定观察期望位置。 之后，通过用于微量样品的附加处理的装置从微量样品储存器中卸载微量样品，并将其放置在观察样品架上。 通过在观察所需位置执行附加处理，准备故障分析样本，并输出通过故障分析装置得到的分析信息。

公开(公告)号：US07592606B2

公开(公告)日：2009-09-22

申请号：US11779686

申请日：2007-07-18

申请人： Koji Ishiguro ,  Kaoru Umemura ,  Noriyuki Kaneoka

发明人： Koji Ishiguro ,  Kaoru Umemura ,  Noriyuki Kaneoka

IPC分类号： G08B21/00

CPC分类号： H01J37/3056 ,  H01J37/3005 ,  H01J37/304 ,  H01J2237/0225 ,  H01J2237/05 ,  H01J2237/24514 ,  H01J2237/248 ,  H01J2237/30455 ,  H01J2237/31744 ,  H01J2237/31745

摘要： Provided is a charged particle beam processing apparatus capable of improving yields by suppressing the spread of metal pollution to a semiconductor manufacturing process to a minimum. The charged particle beam processing apparatus includes an ion beam column 1 that is connected to a vacuum vessel 10 and irradiates a sample 35 with an ion beam 11 of nonmetal ion species, a microsampling unit 3 having a probe 16 that extracts a microsample 43 cut out from a sample 35 by the ion beam 11, a gas gun 2 that discharges a gas for bonding the microsample 43 and the probe 16, a pollution measuring beam column 6A that is connected to the same vacuum vessel 10 to which the ion beam column 1 is connected and irradiates an ion beam irradiation traces by the ion beam column 1 with a pollution measuring beam 13, and a detector 7 that detects characteristic X-rays emitted from the ion beam irradiation traces by the ion beam column 1 upon irradiation with the pollution measuring beam 13.

摘要翻译： 提供一种能够通过将半导体制造工序的金属污染的扩散抑制到最小来提高产率的带电粒子束处理装置。 带电粒子束处理装置包括离子束柱1，其连接到真空容器10并用非金属离子种类的离子束11照射样品35，微量取样单元3具有探针16，其提取切出的微量样品43 从样品35通过离子束11，放出用于接合微量样品43和探针16的气体的气枪2，污染测量束柱6A，连接到相同的真空容器10，离子束柱1 用离子束柱1连接并用污染测量光束13照射离子束照射迹线;以及检测器7，其在照射污染物时检测由离子束柱1从离子束照射迹线发射的特征X射线 测量光束13。

公开(公告)号：US20080210883A1

公开(公告)日：2008-09-04

申请号：US12076481

申请日：2008-03-19

申请人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

发明人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

IPC分类号： G21G5/00

CPC分类号： H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J2237/0805

摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

摘要翻译： Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。 通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。 使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。 在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。 当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

公开(公告)号：US07368729B2

公开(公告)日：2008-05-06

申请号：US11480975

申请日：2006-07-06

申请人： Hiroyasu Shichi ,  Kaoru Umemura ,  Muneyuki Fukuda

发明人： Hiroyasu Shichi ,  Kaoru Umemura ,  Muneyuki Fukuda

IPC分类号： H01J37/20 ,  G01N23/225

CPC分类号： H01J37/3056 ,  H01J2237/0815 ,  H01J2237/28 ,  H01J2237/31749

摘要： A method and system for separating and preparing a sample for analysis from a wafer without contaminating the wafer with an element such as Ga. A first ion beam is irradiated on a sample and scanned to fabricate a micro sample from a part of the sample. A probe for separating the micro sample from the sample and a micro-sample stage on which the micro sample is to be placed and held are provided. The first ion beam contains at least one of an inert gas, oxygen and nitrogen as an element. A second ion beam contains an element different from the element of the first ion beam. The separated micro sample is fed to the second ion beam from the apparatus of the first ion beam while being held on the micro-sample stage, and is processed by using the second ion beam.

摘要翻译： 用于从晶片分离和制备用于分析的样品的方法和系统，而不用诸如Ga的元素污染晶片。将第一离子束照射在样品上并扫描以从样品的一部分制造微量样品。 提供了用于从样品中分离微量样品的探针和其上放置和保持微量样品的微量样品台。 第一离子束包含惰性气体，氧气和氮气中的至少一种作为元素。 第二离子束包含与第一离子束的元素不同的元素。 将分离的微量样品从第一离子束的装置送入第二离子束，同时保持在微量样品台上，并通过使用第二离子束进行处理。

公开(公告)号：US20070145299A1

公开(公告)日：2007-06-28

申请号：US11701410

申请日：2007-02-02

申请人： Satoshi Tomimatsu ,  Kaoru Umemura ,  Yuichi Madokoro ,  Yoshimi Kawanami ,  Yasunori Doi

发明人： Satoshi Tomimatsu ,  Kaoru Umemura ,  Yuichi Madokoro ,  Yoshimi Kawanami ,  Yasunori Doi

IPC分类号： H01J37/08

CPC分类号： G01N1/32 ,  G01N1/28 ,  G01N2001/028 ,  G01N2001/045 ,  G01N2001/282 ,  H01J37/20 ,  H01J37/302 ,  H01J37/3056 ,  H01J2237/2007 ,  H01J2237/201 ,  H01J2237/202 ,  H01J2237/31732 ,  H01J2237/31745 ,  H01J2237/31749

摘要： A specimen fabrication apparatus including: a sample stage to mount or hold a sample substrate, an ion beam irradiating optical system to irradiate the sample substrate with an ion beam, a specimen holder to mount a specimen obtained from the sample substrate, a transferring means including a probe, and a deposition-gas supplying source to supply a deposition-gas for forming a deposition-film between the specimen and the probe.

摘要翻译： 一种试样制造装置，其特征在于，具备：载置试样基板的样品台，离子束照射所述试样基板的离子束照射光学系统，将从所述试样基板得到的试样安装的试样保持体， 探针和沉积气体供给源，以在样品和探针之间提供用于形成沉积膜的沉积气体。

公开(公告)号：US20070112533A1

公开(公告)日：2007-05-17

申请号：US11648615

申请日：2007-01-03

申请人： Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Muneyuki Fukuda ,  Kaoru Umemura

发明人： Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Muneyuki Fukuda ,  Kaoru Umemura

IPC分类号： G06F19/00

CPC分类号： G05B23/0264 ,  H01J2237/208

摘要： After completion of an arbitrary device process, an apparatus for micro-sample extraction extracts a part of a wafer as a micro-sample of a size equal to or larger than a repetition pattern with a probe and places the extracted micro-sample to a micro-sample storage, and the micro-sample storage is stored into an apparatus for micro-sample storage. The wafer is subjected to a post process and an observation desired position is determined in response to a failure analysis requirement. After that, the micro-sample is unloaded from the micro-sample storage by an apparatus for additional processing of the micro-sample and is placed onto an observation sample holder. By performing an additional process in the observation desired position, a failure analysis sample is prepared, and analysis information obtained by an apparatus for failure analysis is output.

摘要翻译： 在完成任意装置处理之后，用于微量样品提取的装置用探针提取一部分晶片作为等于或大于重复图案的尺寸的微量样品，并将提取的微量样品放置在微型 样品存储，并且微量样品储存储存在用于微量样品储存的装置中。 对晶片进行后处理，并且响应于故障分析要求确定观察期望位置。 之后，通过用于微量样品的附加处理的装置从微量样品储存器中卸载微量样品，并将其放置在观察样品架上。 通过在观察所需位置执行附加处理，准备故障分析样本，并输出通过故障分析装置得到的分析信息。

公开(公告)号：US07211805B2

公开(公告)日：2007-05-01

申请号：US11312367

申请日：2005-12-21

申请人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

发明人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

IPC分类号： H01J27/00 ,  G21G5/00 ,  G21K7/00

CPC分类号： H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J2237/0805

摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

摘要翻译： Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。 通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。 使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。 在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。 当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。