公开(公告)号：US20170076901A1

公开(公告)日：2017-03-16

申请号：US15361911

申请日：2016-11-28

Applicant: Gregory Hirsch

Inventor： Gregory Hirsch

IPC: H01J9/02 ,  C23C14/24 ,  C23C14/16 ,  C25D3/50 ,  B21C1/16 ,  C25D17/00 ,  H01J37/073 ,  H01J37/08 ,  H05G2/00 ,  C23C14/58 ,  C25D5/50

CPC classification number: H01J9/025 ,  B21C1/16 ,  C23C14/16 ,  C23C14/24 ,  C23C14/5806 ,  C25D3/50 ,  C25D5/50 ,  C25D17/00 ,  H01J1/3044 ,  H01J37/073 ,  H01J37/08 ,  H01J37/3178 ,  H01J2201/30411 ,  H01J2209/0226 ,  H01J2237/0802 ,  H01J2237/0805 ,  H05G2/005

Abstract: Optimization techniques are disclosed for producing sharp and stable tips/nanotips relying on liquid Taylor cones created from electrically conductive materials with high melting points. A wire substrate of such a material with a preform end in the shape of a regular or concave cone, is first melted with a focused laser beam. Under the influence of a high positive potential, a Taylor cone in a liquid/molten state is formed at that end. The cone is then quenched upon cessation of the laser power, thus freezing the Taylor cone. The tip of the frozen Taylor cone is reheated by the laser to allow its precise localized melting and shaping. Tips thus obtained yield desirable end-forms suitable as electron field emission sources for a variety of applications. In-situ regeneration of the tip is readily accomplished. These tips can also be employed as regenerable bright ion sources using field ionization/desorption of introduced chemical species.

Abstract translation: 公开了优化技术，用于产生依赖于由具有高熔点的导电材料产生的液体泰勒锥的尖锐和稳定的尖端/纳米片。 首先用聚焦激光束熔化这种具有预制件端部为规则的或凹形的形状的材料的线基材。 在高正电位的影响下，在此端形成液态/熔融状态的泰勒锥。 然后在停止激光功率时，锥体被淬火，从而冻结泰勒锥。 冷冻泰勒锥的尖端被激光器重新加热，以允许其精确的局部熔化和成型。 如此获得的提示产生适合作为各种应用的电子场发射源的期望的终端形式。 尖端的原位再生容易实现。 这些尖端也可以用作引入化学物质的场电离/解吸的可再生的明亮离子源。

公开(公告)号：US20170069456A1

公开(公告)日：2017-03-09

申请号：US15256967

申请日：2016-09-06

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Yasuhiko SUGIYAMA ,  Hiroshi OBA

IPC: H01J37/08 ,  H01J37/10

CPC classification number: H01J37/08 ,  H01J37/10 ,  H01J37/12 ,  H01J37/18 ,  H01J2237/0805 ,  H01J2237/083 ,  H01J2237/103

Abstract: A focused ion beam apparatus includes an ion source that emits an ion beam, an extraction electrode that extracts ions from a tip end of an emitter of the ion source, and a first lens electrode that configures a condenser lens by a potential difference with the extraction electrode, the condenser lens focusing the ions extracted by the extraction electrode, in which a strong lens action is generated between the extraction electrode and the first lens electrode so as to focus all ions extracted from the ion source to pass through a hole of the condenser lens including the first lens electrode.

Abstract translation: 聚焦离子束装置包括发射离子束的离子源，从离子源的发射极的前端提取离子的提取电极和通过提取电位差构成聚光透镜的第一透镜电极 电极，所述聚光透镜聚焦由所述提取电极提取的离子，其中在所述提取电极和所述第一透镜电极之间产生强透镜作用，以便将从所述离子源提取的所有离子聚焦通过所述冷凝器的孔 透镜包括第一透镜电极。

公开(公告)号：US08269194B2

公开(公告)日：2012-09-18

申请号：US12733089

申请日：2008-08-06

Applicant: Takashi Kaito ,  Junichi Tashiro ,  Yasuhiko Sugiyama ,  Kouji Iwasaki ,  Toshiaki Fujii ,  Kazuo Aita ,  Takashi Ogawa

Inventor： Takashi Kaito ,  Junichi Tashiro ,  Yasuhiko Sugiyama ,  Kouji Iwasaki ,  Toshiaki Fujii ,  Kazuo Aita ,  Takashi Ogawa

IPC: H01J49/00

CPC classification number: H01J37/3056 ,  G01N1/286 ,  G01N1/32 ,  G03F1/74 ,  G03F1/84 ,  H01J37/08 ,  H01J37/3005 ,  H01J2237/0805 ,  H01J2237/0807 ,  H01J2237/31745

Abstract: A composite focused ion beam device has a sample stage for supporting a sample, a first ion beam irradiation system that irradiates a first ion beam for processing the sample, and a second ion beam irradiation system that irradiates a second ion beam for processing or observing the sample. The first ion beam irradiation system has a liquid metal ion source that generates first ions for forming the first ion beam. The second ion beam irradiation system has a gas field ion source that generates second ions for forming the second ion beam. The first ion beam irradiated by the first ion beam irradiation system has a first beam diameter and the second ion beam irradiated by the second ion beam irradiation system has a second beam diameter smaller than the first beam diameter. The first and second ion beam irradiation systems are disposed relative to the sample stage so that axes of the first and second ion beams are orthogonal to a tilt axis of the sample stage.

Abstract translation: 复合聚焦离子束装置具有用于支撑样品的样品台，照射用于处理样品的第一离子束的第一离子束照射系统和照射第二离子束以用于处理或观察样品的第二离子束照射系统 样品。 第一离子束照射系统具有产生用于形成第一离子束的第一离子的液态金属离子源。 第二离子束照射系统具有产生用于形成第二离子束的第二离子的气体场离子源。 由第一离子束照射系统照射的第一离子束具有第一光束直径，并且由第二离子束照射系统照射的第二离子束具有小于第一光束直径的第二光束直径。 第一和第二离子束照射系统相对于样品台设置，使得第一和第二离子束的轴线垂直于样品台的倾斜轴。

公开(公告)号：US08133760B2

公开(公告)日：2012-03-13

申请号：US12470680

申请日：2009-05-22

Applicant: David Winslow Niles ,  Ronald William Kee

Inventor： David Winslow Niles ,  Ronald William Kee

IPC: H01L21/00

CPC classification number: H01J37/3056 ,  H01J2237/0805 ,  H01J2237/3174 ,  H01J2237/31749

Abstract: A system for accessing circuitry on a flip chip circuit device with active circuitry and full-thickness bulk silicon includes a moveable surface for supporting and locating the circuit device in a plane, an infrared (IR) imaging device located at a defined perpendicular distance from a surface of the bulk silicon, the surface of the bulk silicon parallel to the plane and a milling chamber configured to direct an etchant and a focused ion beam to the surface of the bulk silicon, resulting in a gas-enhanced milling process that creates a milled cavity in the bulk silicon. The system produces an IR reflective material located at a base of the cavity, wherein the circuit device is located within a field of view of the IR imaging device such that the IR reflective material is brought into focus by moving the IR imaging device an adjustable distance perpendicular to the surface of the bulk silicon, and where the adjustable perpendicular distance is indicative of a depth of the cavity.

Abstract translation: 用于访问具有有源电路和全厚体硅的倒装芯片电路器件上的电路的系统包括用于将电路器件支撑并定位在平面内的可移动表面，位于距离 体硅的表面，体硅平行于该平面的表面以及被配置为将蚀刻剂和聚焦离子束引导到体硅表面的研磨室，从而产生气体增强的铣削工艺，其产生铣削 散装硅中的空腔。 该系统产生位于空腔底部的IR反射材料，其中电路装置位于IR成像装置的视场内，使得IR反射材料通过将IR成像装置移动可调距离而被聚焦 垂直于体硅的表面，并且其中可调节的垂直距离表示空腔的深度。

公开(公告)号：US20100297787A1

公开(公告)日：2010-11-25

申请号：US12470680

申请日：2009-05-22

Applicant: David Winslow Niles ,  Ronald William Kee

Inventor： David Winslow Niles ,  Ronald William Kee

IPC: H01L21/66 ,  C23F1/08

CPC classification number: H01J37/3056 ,  H01J2237/0805 ,  H01J2237/3174 ,  H01J2237/31749

Abstract: A system for accessing circuitry on a flip chip circuit device with active circuitry and full-thickness bulk silicon includes a moveable surface for supporting and locating the circuit device in a plane, an infrared (IR) imaging device located at a defined perpendicular distance from a surface of the bulk silicon, the surface of the bulk silicon parallel to the plane and a milling chamber configured to direct an etchant and a focused ion beam to the surface of the bulk silicon, resulting in a gas-enhanced milling process that creates a milled cavity in the bulk silicon. The system produces an IR reflective material located at a base of the cavity, wherein the circuit device is located within a field of view of the IR imaging device such that the IR reflective material is brought into focus by moving the IR imaging device an adjustable distance perpendicular to the surface of the bulk silicon, and where the adjustable perpendicular distance is indicative of a depth of the cavity.

Abstract translation: 用于访问具有有源电路和全厚度体硅的倒装芯片电路器件上的电路的系统包括用于将电路器件支撑并定位在平面中的可移动表面，位于距离 体硅的表面，体硅平行于该平面的表面以及被配置为将蚀刻剂和聚焦离子束引导到体硅表面的研磨室，从而产生气体增强的铣削工艺，其产生铣削 散装硅中的空腔。 该系统产生位于空腔底部的IR反射材料，其中电路装置位于IR成像装置的视场内，使得IR反射材料通过将IR成像装置移动可调距离而被聚焦 垂直于体硅的表面，并且其中可调节的垂直距离表示空腔的深度。

公开(公告)号：US20090121160A1

公开(公告)日：2009-05-14

申请号：US12253042

申请日：2008-10-16

Applicant: Dieter Winkler ,  Udo Weigel ,  Stefan Grimm

Inventor： Dieter Winkler ,  Udo Weigel ,  Stefan Grimm

IPC: G01J1/00

CPC classification number: H01J37/073 ,  H01J27/26 ,  H01J37/08 ,  H01J37/265 ,  H01J37/304 ,  H01J2237/06341 ,  H01J2237/0805 ,  H01J2237/0807 ,  H01J2237/30466 ,  H01J2237/30477 ,  H01J2237/31749

Abstract: A charged particle beam device is described. The device includes an emitter unit including an emitter tip; a voltage supply unit adapted for providing a stable voltage to generate a stable extraction field at the emitter tip; a pulsed voltage supply member adapted for providing a pulsed voltage to generate a pulsed extraction field on top of the stable extraction field; a measuring unit for measuring an emitter characteristic; and a control unit adapted for receiving a signal from the measuring unit and for control of the pulsed voltage supply member.

Abstract translation: 描述带电粒子束装置。 该装置包括发射器单元，其包括发射极尖端; 电压供应单元，适于提供稳定的电压以在发射极尖端处产生稳定的提取场; 脉冲电压供应构件，其适于提供脉冲电压以在所述稳定提取场的顶部产生脉冲提取场; 用于测量发射极特性的测量单元; 以及控制单元，适于接收来自测量单元的信号并用于控制脉冲电压供应构件。

公开(公告)号：US07435972B2

公开(公告)日：2008-10-14

申请号：US11714235

申请日：2007-03-06

Applicant: Yuichi Madokoro ,  Shigeru Izawa ,  Kaoru Umemura ,  Hiroyasu Kaga

Inventor： Yuichi Madokoro ,  Shigeru Izawa ,  Kaoru Umemura ,  Hiroyasu Kaga

IPC: H01J49/00 ,  H01J27/00 ,  G21K5/10

CPC classification number: H01J37/09 ,  H01J2237/022 ,  H01J2237/0805 ,  H01J2237/3109

Abstract: In an aperture for use in an ion beam optical system having its surface coated with a liquid metal, instability of an ion source attributable to sputtering and re-deposition of an aperture base material is prevented. A focused ion beam apparatus using a liquid metal ion source has an aperture for limiting an ion beam diameter. The aperture has a vessel formed with a recess having, at its surface lowermost point, an aperture hole through which the ion beam passes and a liquid metal mounted on the recess, the liquid metal being used for the liquid metal ion source. Preferably, the aperture may be minimized in area of aperture entrance hole inner surface which exposes the base material by tapering an aperture hole portion, by which the ion beam passes, on the downstream side.

Abstract translation: 在用于其表面涂覆有液态金属的离子束光学系统的孔中，防止归因于溅射的离子源的不稳定性和孔基材的再沉积。 使用液体金属离子源的聚焦离子束装置具有用于限制离子束直径的孔。 孔具有形成有凹槽的容器，凹槽在其表面的最低点处具有离子束通过的孔眼和安装在凹部上的液态金属，液态金属用于液体金属离子源。 优选地，孔径可以在孔径入口孔内表面的面积中最小化，孔面内表面通过使下游侧的离子束通过的孔眼部分变细而露出基底材料。

公开(公告)号：US07189982B2

公开(公告)日：2007-03-13

申请号：US11205086

申请日：2005-08-17

Applicant: Yuichi Madokoro ,  Shigeru Izawa ,  Kaoru Umemura ,  Hiroyasu Kaga

Inventor： Yuichi Madokoro ,  Shigeru Izawa ,  Kaoru Umemura ,  Hiroyasu Kaga

IPC: H01J37/08

CPC classification number: H01J37/09 ,  H01J2237/022 ,  H01J2237/0805 ,  H01J2237/3109

Abstract: In an aperture for use in an ion beam optical system having its surface coated with a liquid metal, instability of an ion source attributable to sputtering and re-deposition of an aperture base material is prevented. A focused ion beam apparatus using a liquid metal ion source has an aperture for limiting an ion beam diameter. The aperture has a vessel formed with a recess having, at its surface lowermost point, an aperture hole through which the ion beam passes and a liquid metal mounted on the recess, the liquid metal being used for the liquid metal ion source. Preferably, the aperture may be minimized in area of aperture entrance hole inner surface which exposes the base material by tapering an aperture hole portion, by which the ion beam passes, on the downstream side.

Abstract translation: 在用于其表面涂覆有液态金属的离子束光学系统的孔中，防止归因于溅射的离子源的不稳定性和孔基材的再沉积。 使用液体金属离子源的聚焦离子束装置具有用于限制离子束直径的孔。 孔具有形成有凹槽的容器，凹槽在其表面的最低点处具有离子束通过的孔眼和安装在凹部上的液态金属，液态金属用于液体金属离子源。 优选地，孔径可以在孔径入口孔内表面的面积中最小化，孔面内表面通过使下游侧的离子束通过的孔眼部分变细而露出基底材料。

公开(公告)号：US20060097186A1

公开(公告)日：2006-05-11

申请号：US11312367

申请日：2005-12-21

Applicant: Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

Inventor： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

IPC: H01J27/00

CPC classification number: H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J2237/0805

Abstract: An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

Abstract translation: Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。 通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。 使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。 在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。 当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

公开(公告)号：US07005651B2

公开(公告)日：2006-02-28

申请号：US11004903

申请日：2004-12-07

Applicant: Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

Inventor： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

IPC: G21G5/00 ,  H01J27/00

CPC classification number: H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J2237/0805

Abstract: An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

Abstract translation: Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。 通过使反溅射的粒子成为Ga液态金属离子源的元素（W和Ga），如果反溅射的粒子附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染。 使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。 在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。 当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。