公开(公告)号：US20180053620A1

公开(公告)日：2018-02-22

申请号：US15552480

申请日：2016-02-09

Applicant: SHARP KABUSHIKI KAISHA

Inventor： HIROMU NISHIDA ,  YOSHINORI SEKOGUCHI

IPC: H01J27/26 ,  H01J27/22 ,  H01T19/04 ,  A61L9/22 ,  B60H3/00

CPC classification number: H01J27/26 ,  A61L9/22 ,  B60H3/0071 ,  F24F2003/1682 ,  H01J27/22 ,  H01T19/02 ,  H01T19/04 ,  H01T23/00

Abstract: An ion generating device (1) includes: a discharge electrode (21,22), protruding from a surface of the ion generating device, for generating ions by electric discharge, the discharge electrode having (i) a tip part (31) including a brush-like electrically conductive member and (ii) a base end part (33) to which the brush-like electrically conductive member is attached, and the base end part protruding from the surface of the ion generating device for a length (L2) that is longer than a length (L1) of the tip part.

公开(公告)号：US09561294B2

公开(公告)日：2017-02-07

申请号：US14090624

申请日：2013-11-26

Applicant: ArgentumCidal Electrics, Inc.

Inventor： Thomas A. Fuller ,  Richard Wysk ,  Wayne J. Sebastianelli ,  Paul H. Cohen ,  Robert C. Voigt

IPC: A61L2/03 ,  A61L2/14 ,  A61L2/238 ,  E05B1/00

CPC classification number: A61L2/03 ,  A61L2/14 ,  A61L2/238 ,  E05B1/0069 ,  H01J27/022 ,  H01J27/22 ,  H01J27/26

Abstract: A method and device for destroying and inhibiting exposure to microbes and infection includes a first element and a second element, and a power source. At least one of the elements includes antimicrobial metal, which, when energized by the power source, produces ions that are lethal to microbes. The device can be incorporated into virtually any useful object. During normal use of the object, electrical communication is established between the two elements, causing current supplied from the power source to flow through the antimicrobial metal. The two elements are configured and arranged to ensure that ions flowing from the antimicrobial metal flow through the region in which it is desired to kill microbes. The antimicrobial metal can be on the surface of the element, incorporated into the material making up the element, or provided in any other way that allows the antimicrobial effect to be achieved.

公开(公告)号：US20160133427A1

公开(公告)日：2016-05-12

申请号：US14982544

申请日：2015-12-29

Applicant: ASHWINI K. SINHA ,  STANLEY M. SMITH ,  DOUGLAS C. HEIDERMAN ,  SERGE M. CAMPEAU

Inventor： ASHWINI K. SINHA ,  STANLEY M. SMITH ,  DOUGLAS C. HEIDERMAN ,  SERGE M. CAMPEAU

IPC: H01J27/22 ,  C01B3/00 ,  H01J37/317

CPC classification number: H01J37/3171 ,  C01B3/00 ,  H01J27/22 ,  H01J37/08 ,  H01J37/32458 ,  H01J37/32807 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/08 ,  H01J2237/0815 ,  H01J2237/31701 ,  H01J2237/3365 ,  Y02E60/324

Abstract: A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

Abstract translation: 提供了一种用于在硼离子注入期间改善束电流的新型组成，系统和方法。 在优选的方面，硼离子注入工艺涉及在特定浓度范围内使用B2H6，11BF3和H2。 在生成和注入活性氢离子物质期间使用的离子源的工作电弧电压下，选择B2H6具有高于BF 3的电离横截面。 氢气允许更高水平的B 2 H 6被引入BF 3中而不减少F离子清除。 当与常规硼前体材料产生的束电流相比时，活性硼离子产生改进的束电流，其特征在于保持或增加束电流水平而不引起离子源的劣化。

公开(公告)号：US08609036B2

公开(公告)日：2013-12-17

申请号：US12005649

申请日：2007-12-27

Applicant: Thomas A. Fuller ,  Richard A. Wysk ,  Wayne J. Sebastianelli ,  Paul H. Cohen ,  Robert C. Voigt

Inventor： Thomas A. Fuller ,  Richard A. Wysk ,  Wayne J. Sebastianelli ,  Paul H. Cohen ,  Robert C. Voigt

IPC: A61L2/00

CPC classification number: A61L2/03 ,  A61L2/14 ,  A61L2/238 ,  E05B1/0069 ,  H01J27/022 ,  H01J27/22 ,  H01J27/26

Abstract: A method and device for destroying and inhibiting exposure to microbes and infection includes a first element and a second element, and a power source. At least one of the elements includes antimicrobial metal, which, when energized by the power source, produces ions that are lethal to microbes. The device can be incorporated into virtually any useful object. During normal use of the object, electrical communication is established between the two elements, causing current supplied from the power source to flow through the antimicrobial metal. The two elements are configured and arranged to ensure that ions flowing from the antimicrobial metal flow through the region in which it is desired to kill microbes. The antimicrobial metal can be on the surface of the element, incorporated into the material making up the element, or provided in any other way that allows the antimicrobial effect to be achieved.

Abstract translation: 用于破坏和抑制暴露于微生物和感染的方法和装置包括第一元件和第二元件以及电源。 至少一个元件包括抗微生物金属，当被电源激励时，其产生对微生物致死的离子。 该装置可以并入实际上任何有用的对象。 在物体的正常使用期间，在两个元件之间建立电连通，导致从电源供应的电流流过抗微生物金属。 两个元件被配置和布置成确保从抗微生物金属流出的离子流过希望杀死微生物的区域。 抗微生物金属可以在元件的表面上，并入构成元件的材料中，或以允许实现抗微生物效果的任何其它方式提供。

公开(公告)号：US07804073B2

公开(公告)日：2010-09-28

申请号：US12076481

申请日：2008-03-19

Applicant: Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

Inventor： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

IPC: H01J49/10 ,  H01J27/02

CPC classification number: H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J2237/0805

Abstract: An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

Abstract translation: Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。 通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。 使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。 在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。 当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

公开(公告)号：US07420181B2

公开(公告)日：2008-09-02

申请号：US11730803

申请日：2007-04-04

Applicant: Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

Inventor： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

IPC: H01J37/317 ,  G21K5/00 ,  G01N23/00

CPC classification number: H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J2237/0805

Abstract: An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

公开(公告)号：US20050127304A1

公开(公告)日：2005-06-16

申请号：US11004903

申请日：2004-12-07

Applicant: Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

Inventor： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

IPC: H01J27/26 ,  G21G5/00 ,  H01J27/00 ,  H01J27/02 ,  H01J37/08

CPC classification number: H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J2237/0805

Abstract: An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

Abstract translation: Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。 通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。 使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。 在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。 当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

公开(公告)号：US5194739A

公开(公告)日：1993-03-16

申请号：US854710

申请日：1992-03-20

Applicant: Keiji Sato ,  Yoshie Kitamura ,  Hiroyuki Suzuki

Inventor： Keiji Sato ,  Yoshie Kitamura ,  Hiroyuki Suzuki

IPC: H01J27/22

CPC classification number: H01J27/22

Abstract: A liquid metal ion source which can produce cesium ions stably for a long time in the form of a beam focussed to a micro-spot. The liquid metal ion source is composed of a reservoir containing a liquid metal, and a needle type emitter passing through the reservoir and having a sharp tip end which protrudes from the reservoir, the liquid metal being composed primarily of a cesium compound containing 0.3-20 atom % of oxygen.

Abstract translation: 能够长时间稳定地产生铯离子的液态金属离子源，其形式为聚焦于微点的光束。 液体金属离子源由包含液态金属的储存器和通过储存器的针型发射体构成，并且具有从储存器突出的尖端，液体金属主要由含有0.3-20重量％的铯化合物组成 原子％的氧气。

公开(公告)号：US5144143A

公开(公告)日：1992-09-01

申请号：US641692

申请日：1991-01-16

Applicant: Mario Raspagliesi ,  Candido Medulla

Inventor： Mario Raspagliesi ,  Candido Medulla

IPC: C23C14/48 ,  H01J27/08 ,  H01J27/22 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J27/22 ,  H01J27/08 ,  H01J37/08 ,  H01J2237/081 ,  H01J2237/082 ,  H01J2237/31701

Abstract: The device comprises a cylindrical casing provided with an internal cavity and with a flange and an arc chamber superimposed over the cylindrical casing and including a filament electrically supplied through supply conductors external to said casing and supported by said flange, a repeller plate held at a negative voltage through supply conductors external to said casing and supported by said flange and an inlet for a gas which may be ionized, Inside the arc chamber there is also a support for the metal to be ionized supported and connected electrically to an electrode at a negative voltage by means of a rod passing through the internal cavity of said cylindrical casing.

公开(公告)号：US5013578A

公开(公告)日：1991-05-07

申请号：US448379

申请日：1989-12-11

Applicant: Ian G. Brown ,  Robert A. MacGill ,  James E. Galvin

Inventor： Ian G. Brown ,  Robert A. MacGill ,  James E. Galvin

IPC: C23C14/32 ,  H01J27/22 ,  H05H1/48

CPC classification number: H01J27/22 ,  C23C14/325 ,  H05H1/48

Abstract: An apparatus and method for coating or layering a surface with a metal utilizing a metal vapor vacuum arc plasma source. The apparatus includes a trigger mechanism for actuating the metal vacuum vapor arc plasma source in a pulsed mode at a predetermined rate. The surface or substrate to be coated or layered is supported in position with the plasma source in a vacuum chamber. The surface is electrically biased for a selected period of time during the pulsed mode of operation of the plasma source. Both the pulsing of the metal vapor vacuum arc plasma source and the electrical biasing of the surface are synchronized for selected periods of time.

Abstract translation: 一种利用金属蒸汽真空电弧等离子体源用金属涂覆或分层表面的装置和方法。 该装置包括用于以脉冲模式以预定速率致动金属真空蒸汽电弧等离子体源的触发机构。 要被涂覆或分层的表面或基底被支撑在真空室中的等离子体源的适当位置。 在等离子体源的脉冲操作模式期间，表面被电偏置选定的时间段。 金属蒸汽真空电弧等离子体源的脉冲和表面的电偏置都同步选定的时间段。