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    Ion beam device
    2.
    发明授权
    Ion beam device 有权
    离子束装置

    公开(公告)号：US08263943B2

    公开(公告)日：2012-09-11

    申请号：US13144620

    申请日：2010-01-08

    Applicant: Hiroyasu Shichi ,  Shinichi Matsubara ,  Norihide Saho ,  Noriaki Arai ,  Tohru Ishitani

    Inventor： Hiroyasu Shichi ,  Shinichi Matsubara ,  Norihide Saho ,  Noriaki Arai ,  Tohru Ishitani

    IPC: H01J49/10 ,  H01J37/28

    CPC classification number: H01J37/08 ,  H01J27/26 ,  H01J37/15 ,  H01J2237/0216 ,  H01J2237/0807 ,  H01J2237/28

    Abstract: Provided is an ion beam device provided with a gas electric field ionization ion source which can prevent an emitter tip from vibrating in a non-contact manner. The gas electric field ionization ion source is comprised of an emitter tip (21) for generating ions; an emitter base mount (64) for supporting the emitter tip; an ionizing chamber which has an extraction electrode (24) opposed to the emitter tip and which is configured so as to surround the emitter tip (21); and a gas supply tube (25) for supplying gas to the vicinity of the emitter tip. The emitter base mount and a vacuum container magnetically interact with each other.

    Abstract translation: 提供了一种具有气体电离电离离子源的离子束装置，其能够防止发射极尖端以非接触的方式振动。 气体电场离子源由用于产生离子的发射极尖端（21）组成; 发射极底座（64），用于支撑发射器尖端; 电离室具有与发射极尖端相对的引出电极（24），其构造为围绕发射极尖端（21）; 以及用于将气体供给到发射极尖端附近的气体供给管（25）。 发射极基座和真空容器彼此磁性相互作用。

    GAS FIELD ION SOURCE, CHARGED PARTICLE MICROSCOPE, AND APPARATUS
    4.
    发明申请
    GAS FIELD ION SOURCE, CHARGED PARTICLE MICROSCOPE, AND APPARATUS 有权
    气体离子源，充电颗粒显微镜和装置

    公开(公告)号：US20120119086A1

    公开(公告)日：2012-05-17

    申请号：US13355104

    申请日：2012-01-20

    Applicant: Hiroyasu Shichi ,  Shinichi Matsubara ,  Takashi Ohshima ,  Satoshi Tomimatsu ,  Tomihiro Hashizume ,  Tohru Ishitani

    Inventor： Hiroyasu Shichi ,  Shinichi Matsubara ,  Takashi Ohshima ,  Satoshi Tomimatsu ,  Tomihiro Hashizume ,  Tohru Ishitani

    IPC: H01J37/26

    CPC classification number: H01J27/26 ,  H01J37/08 ,  H01J2237/0805 ,  H01J2237/0807 ,  H01J2237/182

    Abstract: A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.

    Abstract translation: 一种气体离子源，其可以在粗吸真空中同时增加电导，并且从离子电流的增加的角度降低提取电极的孔直径。 气体离子源具有改变真空气体分子离子化室中的电导的机理。 也就是说，根据是否从气体分子离子化室抽出离子束，改变对气体分子离子化室进行抽真空的电导。 通过将盖子形成为构成用双金属合金改变电导的机构的部件的部分，可以根据气体分子离子化室的温度来改变电导率，例如，电导率变为相对较小的电导率 相对较低的温度和相对高的温度下的相对较大的电导率。

    ION BEAM DEVICE
    6.
    发明申请
    ION BEAM DEVICE 有权
    离子束装置

    公开(公告)号：US20110147609A1

    公开(公告)日：2011-06-23

    申请号：US12995700

    申请日：2009-03-30

    Applicant: Hiroyasu Shichi ,  Shinichi Matsubara ,  Norihide Saho ,  Masahiro Yamaoka ,  Noriaki Arai

    Inventor： Hiroyasu Shichi ,  Shinichi Matsubara ,  Norihide Saho ,  Masahiro Yamaoka ,  Noriaki Arai

    IPC: H01J3/04

    CPC classification number: H01J27/26 ,  H01J27/022 ,  H01J37/023 ,  H01J37/067 ,  H01J37/08 ,  H01J37/26 ,  H01J37/28 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/0807 ,  H01J2237/2803

    Abstract: An ion beam device according to the present invention includes a gas field ion source (1) including an emitter tip (21) supported by an emitter base mount (64), a ionization chamber (15) including an extraction electrode (24) and being configured to surround the emitter tip (21), and a gas supply tube (25). A center axis line of the extraction electrode (24) overlaps or is parallel to a center axis line (14A) of the ion irradiation light system, and a center axis line (66) passing the emitter tip (21) and the emitter base mount (64) is inclinable with respect to a center axis line of the ionization chamber (15). Accordingly, an ion beam device including a gas field ion source capable of adjusting the direction of the emitter tip is provided.

    Abstract translation: 根据本发明的离子束装置包括气体离子源（1），其包括由发射极基座（64）支撑的发射极尖端（21），包括引出电极（24）的电离室（15） 构造成围绕发射器尖端（21），以及气体供应管（25）。 引出电极（24）的中心轴线与离​​子照射光系统的中心轴线（14A）重叠或平行，通过发射极尖端（21）和发射极基座 （64）相对于所述电离室（15）的中心轴线是可倾斜的。 因此，提供了包括能够调节发射极尖端的方向的气体场离子源的离子束装置。

    ION BEAM PROCESSING APPARATUS
    7.
    发明申请
    ION BEAM PROCESSING APPARATUS 有权
    离子束加工装置

    公开(公告)号：US20100176297A1

    公开(公告)日：2010-07-15

    申请号：US12731910

    申请日：2010-03-25

    Applicant: Hiroyasu Shichi ,  Satoshi Tomimatsu ,  Noriyuki Kaneoka ,  Kaoru Umemura ,  Koji Ishiguro

    Inventor： Hiroyasu Shichi ,  Satoshi Tomimatsu ,  Noriyuki Kaneoka ,  Kaoru Umemura ,  Koji Ishiguro

    IPC: H01J37/26 ,  G01N23/22

    CPC classification number: H01J37/261 ,  H01J37/20 ,  H01J37/3045 ,  H01J2237/08 ,  H01J2237/20207 ,  H01J2237/24528 ,  H01J2237/28 ,  H01J2237/31713 ,  H01J2237/3174 ,  H01J2237/31749

    Abstract: An ion beam processing apparatus includes an ion beam irradiation optical system that irradiate a rectangular ion beam to a sample held on a first sample stage, an electron beam irradiation optical system that irradiates an electron beam to the sample, and a second sample stage on which a test piece, extracted from the sample by a probe, is mounted. An angle of irradiation of the ion beam can be tilted by rotating the second sample stage about a tilting axis. A controller controls the width of skew of an intensity profile representing an edge of the rectangular ion beam in a direction perpendicular to a first direction in which the tilting axis of the second sample stage is projected on the second sample stage surface so that the width will be smaller than the width of skew of an intensity profile representing another edge of the ion beam in a direction parallel to the first direction.

    Abstract translation: 一种离子束处理装置，包括：将矩形离子束照射到保持在第一样品台上的样品的离子束照射光学系统，向样品照射电子束的电子束照射光学系统;以及第二样品台， 通过探针从样品中提取的试片被安装。 离子束的照射角度可以通过使第二样品台围绕倾斜轴旋转来倾斜。 控制器控制表示矩形离子束在与第二样品台的倾斜轴投射到第二样品台表面上的第一方向垂直的方向上的强度分布的偏斜宽度，使得宽度将 小于在平行于第一方向的方向上表示离子束的另一边缘的强度分布的偏斜宽度。

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