Invention Application
- Patent Title: ION BEAM DEVICE
- Patent Title (中): 离子束装置
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Application No.: US12995700Application Date: 2009-03-30
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Publication No.: US20110147609A1Publication Date: 2011-06-23
- Inventor: Hiroyasu Shichi , Shinichi Matsubara , Norihide Saho , Masahiro Yamaoka , Noriaki Arai
- Applicant: Hiroyasu Shichi , Shinichi Matsubara , Norihide Saho , Masahiro Yamaoka , Noriaki Arai
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2008-148392 20080605
- International Application: PCT/JP2009/056485 WO 20090330
- Main IPC: H01J3/04
- IPC: H01J3/04
Abstract:
An ion beam device according to the present invention includes a gas field ion source (1) including an emitter tip (21) supported by an emitter base mount (64), a ionization chamber (15) including an extraction electrode (24) and being configured to surround the emitter tip (21), and a gas supply tube (25). A center axis line of the extraction electrode (24) overlaps or is parallel to a center axis line (14A) of the ion irradiation light system, and a center axis line (66) passing the emitter tip (21) and the emitter base mount (64) is inclinable with respect to a center axis line of the ionization chamber (15). Accordingly, an ion beam device including a gas field ion source capable of adjusting the direction of the emitter tip is provided.
Public/Granted literature
- US08779380B2 Ion beam device Public/Granted day:2014-07-15
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