Charged particle beam apparatus
    2.
    发明授权

    公开(公告)号:US11791124B2

    公开(公告)日:2023-10-17

    申请号:US17230650

    申请日:2021-04-14

    摘要: An object of the present disclosure is to provide a charged particle beam apparatus that can quickly find a correction condition for a new aberration that is generated in association with beam adjustment. In order to achieve the above object, the present disclosure proposes a charged particle beam apparatus configured to include an objective lens (7) configured to focus a beam emitted from a charged particle source and irradiate a specimen, a visual field movement deflector (5 and 6) configured to deflect an arrival position of the beam with respect to the specimen, and an aberration correction unit (3 and 4) disposed between the visual field movement deflector and the charged particle source, in which the aberration correction unit is configured to suppress a change in the arrival position of the beam irradiated under different beam irradiation conditions.

    Automated Analysis Device
    3.
    发明公开

    公开(公告)号:US20230258672A1

    公开(公告)日:2023-08-17

    申请号:US18136406

    申请日:2023-04-19

    IPC分类号: G01N35/02 G01N35/00

    摘要: This automated analysis device is provided with a plurality of analysis units for analyzing a specimen, a buffer portion which holds a plurality of specimen racks on which are placed specimen containers holding the specimen, a sampler portion which conveys the specimen racks held in the buffer portion to the analysis units, and a control portion which, when performing a process to deliver the specimen racks to the plurality of analysis units, outputs synchronization signals to all the plurality of analysis units, wherein the analysis unit performs a delivery process starting from the synchronization signal, and the analysis unit performs a delivery process starting from the synchronization signal.

    Plasma processing apparatus and data analysis apparatus

    公开(公告)号:US11538671B2

    公开(公告)日:2022-12-27

    申请号:US16666842

    申请日:2019-10-29

    IPC分类号: H01J37/32

    摘要: In time-series data indicating light emission of plasma when plasma processing is carried out on a sample by generating the plasma, an analysis apparatus creates combinations of a plurality of light emission wavelengths of elements and a plurality of time intervals within a plasma processing interval and calculates, for each of the combinations of the wavelengths and the time intervals, a correlation between an average value of light emission intensity and the number of times the plasma processing is carried out on the samples for each of the combinations of the wavelengths and the time intervals that have been created. Thereafter, the data analysis apparatus selects, as a combination of the wavelength and the time interval used to observe or control the plasma processing, a combination of a wavelength of light emitting from a specific element and a specific time interval having a maximum correlation.

    Automated analysis device
    6.
    发明授权

    公开(公告)号:US11506534B2

    公开(公告)日:2022-11-22

    申请号:US16472129

    申请日:2017-10-24

    摘要: An automatic analysis apparatus comprises: a light source generating light having a center wavelength equal to or shorter than 340 nm; a fluorescent substance excited by the light source light, and generates light together with transmitted light from the light source, having a wavelength of 340 nm to 800 nm; a condenser lens; at least one slit; a reaction cell holding a reaction solution where a specimen and reagent are mixed, and that the light source light and the light from the fluorescent substance enter; and a detector that detects light transmitted through the reaction cell. The light source, fluorescent substance, condenser lens, and slit are provided along a straight light corresponding to the optical axis. The width of the slit's opening is equal to or narrower than the width of a ray forming an image of the light source at the position of the slit.

    Defect classification device, inspection device, and inspection system

    公开(公告)号:US11442024B2

    公开(公告)日:2022-09-13

    申请号:US16642948

    申请日:2017-09-11

    IPC分类号: G01N21/95 G01N21/956

    摘要: In order to prevent an erroneous determination of an on-film defect, the sensitivity of the post-inspection is reduced so that a film swelling due to a minute defect would not be detected. Classification is performed to determine whether a defect is at least one of an on-film defect and a film swelling, by performing a coordinate correction on the result of a post-inspection by an actual-defect fine alignment using the result of a pre-inspection performed with two-stage thresholds, and by checking defects against each other. In addition, classification is performed to determine whether a defect is at least one of an on-film defect and a film swelling by, during the post-inspection, preparing instruction data from information of the refractive index and thickness of a film formed on a wafer and comparing the instruction data with a signal intensity ratio of a detection system.

    Linear motor for vacuum and vacuum processing apparatus

    公开(公告)号:US11418101B2

    公开(公告)日:2022-08-16

    申请号:US16600010

    申请日:2019-10-11

    摘要: Since wires connected to a linear motor are routed in a vacuum sample chamber, outgassing is generated from wire coating and efficiency of assembly operations is reduced. Further, there is a problem that thrust generation efficiency of the linear motor is reduced when a gap between a coil and a permanent magnet of the linear motor cannot be small. In order to solve the above problems, a linear motor for vacuum is provided, the linear motor for vacuum including: a mover having a permanent magnet; and a stator having a support member to which a coil is fixed, in which the support member includes a vacuum sealing portion that vacuum seals with a wall surface of a vacuum sample chamber, and a feed-through for supplying a current to the coil provided in the vacuum sample chamber.

    Analysis method and semiconductor etching apparatus

    公开(公告)号:US11410836B2

    公开(公告)日:2022-08-09

    申请号:US16281652

    申请日:2019-02-21

    摘要: There is provided a method of analyzing data obtained from an etching apparatus for micromachining a wafer using plasma. This method includes the following steps: acquiring the plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, the plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of the etching processing, evaluating the relationship between changes in the etching processing conditions and changes in the light-emission intensities at the plurality of different wavelengths and times with respect to the wavelengths and times of the plasma light-emission data, and identifying the wavelength and the time of the plasma light-emission data based on the evaluation result, the wavelength and the time being to be used for the adjustment of the etching processing condition.