公开(公告)号：US20150048862A1

公开(公告)日：2015-02-19

申请号：US14459152

申请日：2014-08-13

申请人： Applied Materials, Inc.

发明人： Shuo NA ,  Kelby YANCY ,  Chunsheng CHEN ,  Ilias ILIOPOULOS

IPC分类号： H01J37/32 ,  H01L21/66 ,  G01R31/24

CPC分类号： H01J37/32944 ,  G01R31/12 ,  G01R31/245 ,  H01J2237/0225 ,  H01J2237/24592

摘要： A method and apparatus for detecting substrate arcing and breakage within a processing chamber is provided. A controller monitors chamber data, e.g., parameters such as RF signals, voltages, and other electrical parameters, during operation of the processing chamber, and analyzes the chamber data for abnormal spikes and trends. Using such data mining and analysis, the controller can detect broken substrates without relying on glass presence sensors on robots, but rather based on the chamber data.

摘要翻译： 提供了一种用于检测处理室内的基板电弧和断裂的方法和装置。 在处理室的操作期间，控制器监视室数据，例如诸如RF信号，电压和其他电参数的参数，并且分析室数据以产生异常尖峰和趋势。 使用这种数据挖掘和分析，控制器可以检测破碎的基板，而不依赖于机器人上的玻璃存在传感器，而是基于腔室数据。

公开(公告)号：US20130305989A1

公开(公告)日：2013-11-21

申请号：US13948280

申请日：2013-07-23

申请人： Axcelis Technologies, Inc.

发明人： Aseem K. Srivastava ,  William F. DiVergilio ,  Glen R. Gilchrist

IPC分类号： C23C14/48

CPC分类号： C23C14/48 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/0225

摘要： Some techniques disclosed herein facilitate cleaning residue from a molecular beam component. For example, in an exemplary method, a molecular beam is provided along a beam path, causing residue build up on the molecular beam component. To reduce the residue, the molecular beam component is exposed to a hydro-fluorocarbon plasma. Exposure to the hydro-fluorocarbon plasma is ended based on whether a first predetermined condition is met, the first predetermined condition indicative of an extent of removal of the residue. Other methods and systems are also disclosed.

摘要翻译： 本文公开的一些技术有助于清除分子束成分的残留物。 例如，在示例性方法中，沿着光束路径提供分子束，导致分子束分量上的残留物积聚。 为了减少残留物，分子束组分暴露于氢氟碳等离子体。 基于是否满足第一预定条件，暴露于氢氟烃等离子体结束，第一预定条件指示残留物的去除程度。 还公开了其它方法和系统。

公开(公告)号：US07347006B2

公开(公告)日：2008-03-25

申请号：US11065359

申请日：2005-02-25

申请人： Tsuyoshi Moriya ,  Hiroshi Nagaike ,  Hiroyuki Nakayama ,  Kikuo Okuyama ,  Manabu Shimada

发明人： Tsuyoshi Moriya ,  Hiroshi Nagaike ,  Hiroyuki Nakayama ,  Kikuo Okuyama ,  Manabu Shimada

IPC分类号： F26B5/04

CPC分类号： H01L21/67248 ,  H01J37/32935 ,  H01J2237/0225

摘要： A processing apparatus includes a first detection unit for detecting a temperature of an inner wall of the vacuum vessel, a second detection unit for detecting a temperature of the processing unit, and a first control unit for controlling a temperature of the gas. The first control unit controls the temperature of the gas based on a temperature gradient between the temperatures of the inner wall and the gas or a temperature gradient between the temperatures of the processing unit and the gas. A method for removing particles from a processing apparatus includes a first detection step for detecting a temperature of an inner wall of the vacuum vessel, a second detection step for detecting a temperature of the processing unit, a first control step for controlling a temperature of the gas, and a gas introduction step for introducing the gas into the inner space of the vacuum vessel.

摘要翻译： 处理装置包括用于检测真空容器的内壁的温度的第一检测单元，用于检测处理单元的温度的第二检测单元和用于控制气体的温度的第一控制单元。 第一控制单元基于内壁和气体的温度之间的温度梯度或处理单元和气体的温度之间的温度梯度来控制气体的温度。 从处理装置中除去颗粒的方法包括：第一检测步骤，用于检测真空容器的内壁的温度;第二检测步骤，用于检测处理单元的温度;第一控制步骤， 气体和气体引入步骤，用于将气体引入真空容器的内部空间。

公开(公告)号：US07223976B2

公开(公告)日：2007-05-29

申请号：US11437638

申请日：2006-05-22

申请人： Takashi Onishi

发明人： Takashi Onishi

IPC分类号： G01N21/88

CPC分类号： H01J37/02 ,  B82Y10/00 ,  B82Y40/00 ,  G01N23/2252 ,  H01J37/16 ,  H01J37/24 ,  H01J37/28 ,  H01J37/304 ,  H01J37/3174 ,  H01J2237/0213 ,  H01J2237/0225 ,  H01J2237/045 ,  H01J2237/16 ,  H01J2237/24415 ,  H01J2237/2445 ,  H01J2237/3175

摘要： The charged particle beams is provided, which can analyze contamination of the inner wall of the system without being disassembled and supply information on appropriate maintenance timing. The contamination level of the inner wall of the system is identified by measuring the spectrum of the X-rays emitted from the inner wall due to irradiation of a charged particle beam or a recoil electron.

摘要翻译： 提供带电粒子束，其可以分解系统的内壁的污染而不被拆卸并在适当的维护时间上提供信息。 通过测量由于带电粒子束或反冲电子的照射而从内壁发射的X射线的光谱，来识别系统内壁的污染水平。

公开(公告)号：US07208731B2

公开(公告)日：2007-04-24

申请号：US11437717

申请日：2006-05-22

申请人： Takashi Onishi

发明人： Takashi Onishi

IPC分类号： G01N21/88

CPC分类号： H01J37/02 ,  B82Y10/00 ,  B82Y40/00 ,  G01N23/2252 ,  H01J37/16 ,  H01J37/24 ,  H01J37/28 ,  H01J37/304 ,  H01J37/3174 ,  H01J2237/0213 ,  H01J2237/0225 ,  H01J2237/045 ,  H01J2237/16 ,  H01J2237/24415 ,  H01J2237/2445 ,  H01J2237/3175

摘要： The charged particle beams is provided, which can analyze contamination of the inner wall of the system without being disassembled and supply information on appropriate maintenance timing. The contamination level of the inner wall of the system is identified by measuring the spectrum of the X-rays emitted from the inner wall due to irradiation of a charged particle beam or a recoil electron.

公开(公告)号：US07177020B2

公开(公告)日：2007-02-13

申请号：US11128352

申请日：2005-05-13

申请人： Hiroshi Morioka ,  Minori Noguchi ,  Yoshimasa Ohshima ,  Yukio Kembo ,  Hidetoshi Nishiyama ,  Kazuhiko Matsuoka ,  Yoshiharu Shigyo

发明人： Hiroshi Morioka ,  Minori Noguchi ,  Yoshimasa Ohshima ,  Yukio Kembo ,  Hidetoshi Nishiyama ,  Kazuhiko Matsuoka ,  Yoshiharu Shigyo

IPC分类号： G01J3/00

CPC分类号： H01L21/681 ,  B82Y15/00 ,  G01N21/94 ,  G01N21/9501 ,  G01N21/95623 ,  G01N2021/8822 ,  G01R31/308 ,  H01J37/00 ,  H01J2237/022 ,  H01J2237/0225 ,  H01L21/67253 ,  H01L21/67288 ,  H01L22/12

摘要： An apparatus and method for detecting defects on a specimen includes an illumination optical unit which obliquely projects a laser onto a region which is longer in one direction on a surface of a specimen than in a transverse direction, a table unit which mounts the specimen and which is movable, a detection optical unit which detects light from the specimen illuminated by the laser with an image sensor while the table is moving, and a signal processor. The signal processor processes a signal outputted from the image sensor of the detection optical unit and converted to a digital signal and extracts defects of the specimen by comparing the converted digital signal with a reference digital signal. A display unit displays information of defects extracted by the signal processor.

摘要翻译： 用于检测试样缺陷的装置和方法包括照射光学单元，其将激光倾斜地突出到在一个方向上在一个方向上比在横向方向上更长的区域，安装样本的台单元， 可移动的检测光学单元，检测光学单元，其在桌子移动时利用图像传感器检测由激光照射的样本的光，以及信号处理器。 信号处理器处理从检测光学单元的图像传感器输出的信号并转换为数字信号，并通过将转换的数字信号与参考数字信号进行比较来提取样本的缺陷。 显示单元显示由信号处理器提取的缺陷的信息。

公开(公告)号：US20060289754A1

公开(公告)日：2006-12-28

申请号：US11437717

申请日：2006-05-22

申请人： Takashi Onishi

发明人： Takashi Onishi

IPC分类号： G21K7/00

CPC分类号： H01J37/02 ,  B82Y10/00 ,  B82Y40/00 ,  G01N23/2252 ,  H01J37/16 ,  H01J37/24 ,  H01J37/28 ,  H01J37/304 ,  H01J37/3174 ,  H01J2237/0213 ,  H01J2237/0225 ,  H01J2237/045 ,  H01J2237/16 ,  H01J2237/24415 ,  H01J2237/2445 ,  H01J2237/3175

摘要： The charged particle beams is provided, which can analyze contamination of the inner wall of the system without being disassembled and supply information on appropriate maintenance timing. The contamination level of the inner wall of the system is identified by measuring the spectrum of the X-rays emitted from the inner wall due to irradiation of a charged particle beam or a recoil electron.

公开(公告)号：US07037735B2

公开(公告)日：2006-05-02

申请号：US10170378

申请日：2002-06-14

申请人： Minori Noguchi ,  Yoshimasa Ohshima ,  Hidetoshi Nishiyama ,  Shunichi Matsumoto ,  Yukio Kembo ,  Ryouji Matsunaga ,  Keiji Sakai ,  Takanori Ninomiya ,  Tetsuya Watanabe ,  Hisato Nakamura ,  Takahiro Jingu ,  Yoshio Morishige ,  Shuichi Chikamatsu

发明人： Minori Noguchi ,  Yoshimasa Ohshima ,  Hidetoshi Nishiyama ,  Shunichi Matsumoto ,  Yukio Kembo ,  Ryouji Matsunaga ,  Keiji Sakai ,  Takanori Ninomiya ,  Tetsuya Watanabe ,  Hisato Nakamura ,  Takahiro Jingu ,  Yoshio Morishige ,  Shuichi Chikamatsu

IPC分类号： H01L21/66 ,  G01R31/26

CPC分类号： B82Y15/00 ,  G01N21/94 ,  G01N21/95623 ,  G01N21/95684 ,  G01N2021/8822 ,  G01R31/308 ,  H01J37/00 ,  H01J2237/022 ,  H01J2237/0225 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/681 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： A defect inspection method includes radiating an illumination slit-shaped beam having lights substantially parallel to a longitudinal direction to a substrate having circuit patterns in a direction inclined at a predetermined gradient relative to the direction of a line normal to the substrate and inclined at a predetermined gradient on a surface with respect to a group of main straight lines of the circuit patterns with its longitudinal direction oriented almost perpendicularly to a direction of a movement of the substrate. Scattered light reflected by a defect such as a foreign particle existing on the illuminated substrate is received and converted into a detection signal by using an image sensor, and defect judging is effected of an extracted a signal indicating a defect such as a foreign particle on the basis of the detection signal output.

公开(公告)号：US20010021015A1

公开(公告)日：2001-09-13

申请号：US09805188

申请日：2001-03-14

发明人： Hiroshi Morioka ,  Minori Noguchi ,  Yoshimasa Ohshima ,  Yukio Kembo ,  Hidetoshi Nishiyama ,  Kazuhiko Matsuoka ,  Yoshiharu Shigyo

IPC分类号： G01N021/00

CPC分类号： H01L21/681 ,  B82Y15/00 ,  G01N21/94 ,  G01N21/9501 ,  G01N21/95623 ,  G01N2021/8822 ,  G01R31/308 ,  H01J37/00 ,  H01J2237/022 ,  H01J2237/0225 ,  H01L21/67253 ,  H01L21/67288 ,  H01L22/12

摘要： A processing method for semiconductor devices in a semiconductor fabrication line includes processing a substrate in a first processing apparatus, transferring the substrate processed in the first processing apparatus to a detecting apparatus without removal of the substrate from the semiconductor fabrication line while continuing fabrication of the semiconductor devices, detecting foreign particle defects on the substrate transferred to the detecting apparatus, and determining a foreign particle generation condition of the processing apparatus based on a data from the detecting.

摘要翻译： 半导体制造线中的半导体器件的处理方法包括在第一处理设备中处理衬底，将在第一处理设备中处理的衬底转移到检测设备，而不从半导体制造线移除衬底，同时继续制造半导体 检测转移到检测装置的基板上的异物缺陷，以及根据来自检测的数据确定处理装置的异物生成条件。

公开(公告)号：US5689112A

公开(公告)日：1997-11-18

申请号：US631059

申请日：1996-04-12

申请人： Harald A. Enge ,  William A. Lanford

发明人： Harald A. Enge ,  William A. Lanford

IPC分类号： G01Q90/00 ,  H01J37/252 ,  H01J49/44

CPC分类号： H01J49/463 ,  H01J37/252 ,  H01J2237/0225 ,  H01J2237/053 ,  H01J2237/1207

摘要： Surface contamination of silicon wafers is detected by a combined beam-deflecting magnet and magnetic spectrometer system. Heavy ions are directed onto the surface of a silicon wafer through the beam-deflecting magnet, and ions back-scattered from contaminants in the surface of the wafer pass through the magnetic spectrometer onto a focal-plane detector. One or more Einzel lenses prevent ions back-scattered from the silicon in the wafer from reaching the detector.

摘要翻译： 通过组合的光束偏转磁体和磁谱仪系统检测硅晶片的表面污染。 重离子通过光束偏转磁体被引导到硅晶片的表面上，并且从晶片表面的污染物反向散射的离子通过磁性光谱仪进入焦平面检测器。 一个或多个Einzel透镜防止从晶片中的硅反向散射的离子到达检测器。