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    Method of apparatus for detecting particles on a specimen
    4.
    发明授权
    Method of apparatus for detecting particles on a specimen 有权
    用于检测样品上的颗粒的装置的方法

    公开(公告)号：US07952700B2

    公开(公告)日：2011-05-31

    申请号：US12907895

    申请日：2010-10-19

    申请人： Akira Hamamatsu ,  Minori Noguchi ,  Yoshimasa Ohshima ,  Sachio Uto ,  Taketo Ueno ,  Hiroyuki Nakano ,  Takahiro Jingu ,  Hisashi Hatano ,  Yukihisa Mohara ,  Seiji Otani ,  Takahiro Togashi

    发明人： Akira Hamamatsu ,  Minori Noguchi ,  Yoshimasa Ohshima ,  Sachio Uto ,  Taketo Ueno ,  Hiroyuki Nakano ,  Takahiro Jingu ,  Hisashi Hatano ,  Yukihisa Mohara ,  Seiji Otani ,  Takahiro Togashi

    IPC分类号： G01N21/00

    CPC分类号： G01N21/956

    摘要： A method and apparatus of detecting a defect by inspecting a specimen in which a surface of a specimen on which plural patterns are formed is illuminated with an elongated shape light flux from one of plural directions which are different in elevation angle by switching an optical path of the light flux emitted from an illuminating light source in accordance with a kind of defect to be detected. Plural optical images of the specimen illuminated by the elongated shape light flux are captured with plural image sensors installed in different elevation angle directions by changing an enlarging magnification in accordance with a density of the pattern formed on the sample in an area irradiated with the illuminating elongated shape light flux. A defect on the specimen is detected by processing the images captured by the plural image sensors.

    摘要翻译： 通过检查其中形成有多个图案的样本的表面的样本来检测缺陷的方法和装置，通过从仰角不同的多个方向之一的细长形状的光束照射， 根据要检测的缺陷的种类从照明光源发射的光束。 通过用安装在不同仰角方向上的多个图像传感器捕获由细长形状光束照射的样本的多个光学图像，通过根据在照射细长的照射区域中在样品上形成的图案的密度来改变放大倍率 形状光通量。 通过处理由多个图像传感器捕获的图像来检测样本上的缺陷。

    Method of apparatus for detecting particles on a specimen
    5.
    发明授权
    Method of apparatus for detecting particles on a specimen 有权
    用于检测样品上的颗粒的装置的方法

    公开(公告)号：US07817261B2

    公开(公告)日：2010-10-19

    申请号：US12114139

    申请日：2008-05-02

    申请人： Akira Hamamatsu ,  Minori Noguchi ,  Yoshimasa Ohshima ,  Sachio Uto ,  Taketo Ueno ,  Hiroyuki Nakano ,  Takahiro Jingu ,  Hisashi Hatano ,  Yukihisa Mohara ,  Seiji Otani ,  Takahiro Togashi

    发明人： Akira Hamamatsu ,  Minori Noguchi ,  Yoshimasa Ohshima ,  Sachio Uto ,  Taketo Ueno ,  Hiroyuki Nakano ,  Takahiro Jingu ,  Hisashi Hatano ,  Yukihisa Mohara ,  Seiji Otani ,  Takahiro Togashi

    IPC分类号： G01N21/00

    CPC分类号： G01N21/956

    摘要： A method and apparatus of detecting a defect by inspecting a specimen in which a surface of a specimen on which plural patterns are formed is illuminated with an elongated shape light flux from one of plural directions which are different in elevation angle by switching an optical path of the light flux emitted from an illuminating light source in accordance with a kind of defect to be detected. Plural optical images of the specimen illuminated by the elongated shape light flux are captured with plural image sensors installed in different elevation angle directions by changing an enlarging magnification in accordance with a density of the pattern formed on the sample in an area irradiated with the illuminating elongated shape light flux. A defect on the specimen is detected by processing the images captured by the plural image sensors.

    摘要翻译： 通过检查其中形成有多个图案的样本的表面的样本来检测缺陷的方法和装置，通过从仰角不同的多个方向之一的细长形状的光束照射， 根据要检测的缺陷的种类从照明光源发射的光束。 通过用安装在不同仰角方向上的多个图像传感器捕获由细长形状光束照射的样本的多个光学图像，通过根据在照射细长的照射区域中在样品上形成的图案的密度来改变放大倍率 形状光通量。 通过处理由多个图像传感器捕获的图像来检测样本上的缺陷。

    METHOD AND APPARATUS FOR DETECTING DEFECTS
    6.
    发明申请
    METHOD AND APPARATUS FOR DETECTING DEFECTS 审中-公开
    检测缺陷的方法和装置

    公开(公告)号：US20100103409A1

    公开(公告)日：2010-04-29

    申请号：US12652452

    申请日：2010-01-05

    申请人： Yoshimasa OHSHIMA ,  Minori Noguchi ,  Hiroyuki Nakano

    发明人： Yoshimasa OHSHIMA ,  Minori Noguchi ,  Hiroyuki Nakano

    IPC分类号： G01N21/88

    CPC分类号： G01N21/9505 ,  G01N21/47 ,  G01N21/94 ,  G01N21/9501

    摘要： An inspection apparatus projects a laser beam on the surface of a SOI wafer and detects foreign matter on and defects in the surface of the SOI wafer by receiving scattered light reflected from the surface of the SOI wafer. The wavelength of the laser beam used by the inspection apparatus is determined so that a penetration depth of the laser beam in a Si thin film may be 10 nm or below to detect only foreign matter on and defects in the outermost surface and not to detect foreign matter and defects in a BOX layer. Only the foreign matter on and defects in the outermost surface layer can be detected without being influenced by thin-film interference by projecting the laser beam on the surface of the SOI wafer and receiving scattered light rays.

    摘要翻译： 检查装置将激光束投射在SOI晶片的表面上，通过接收从SOI晶片的表面反射的散射光来检测SOI晶片的异物和表面的缺陷。 确定检查装置使用的激光束的波长，使得Si薄膜中的激光束的穿透深度可以为10nm以下，仅检测异物和最外表面的缺陷，并且不检测外部 BOX层的物质和缺陷。 只有通过将激光束投射在SOI晶片的表面上并且接收散射光线，才能够检测出最外层的异物和缺陷，而不受薄膜干涉的影响。

    Method Of Apparatus For Detecting Particles On A Specimen
    8.
    发明申请
    Method Of Apparatus For Detecting Particles On A Specimen 有权
    检测样品中颗粒物的方法

    公开(公告)号：US20080204724A1

    公开(公告)日：2008-08-28

    申请号：US12114139

    申请日：2008-05-02

    申请人： Akira Hamamatsu ,  Minori Noguchi ,  Yoshimasa Ohshima ,  Sachio Uto ,  Taketo Ueno ,  Hiroyuki Nakano ,  Takahiro Jingu ,  Hisashi Hatano ,  Yukihisa Mohara ,  Seiji Otani ,  Takahiro Togashi

    发明人： Akira Hamamatsu ,  Minori Noguchi ,  Yoshimasa Ohshima ,  Sachio Uto ,  Taketo Ueno ,  Hiroyuki Nakano ,  Takahiro Jingu ,  Hisashi Hatano ,  Yukihisa Mohara ,  Seiji Otani ,  Takahiro Togashi

    IPC分类号： G01N21/00

    CPC分类号： G01N21/956

    摘要： A method and apparatus of detecting a defect by inspecting a specimen in which a surface of a specimen on which plural patterns are formed is illuminated with an elongated shape light flux from one of plural directions which are different in elevation angle by switching an optical path of the light flux emitted from an illuminating light source in accordance with a kind of defect to be detected. Plural optical images of the specimen illuminated by the elongated shape light flux are captured with plural image sensors installed in different elevation angle directions by changing an enlarging magnification in accordance with a density of the pattern formed on the sample in an area irradiated with the illuminating elongated shape light flux. A defect on the specimen is detected by processing the images captured by the plural image sensors.

    摘要翻译： 通过检查其中形成有多个图案的样本的表面的样本来检测缺陷的方法和装置，通过从仰角不同的多个方向之一的细长形状的光束照射， 根据要检测的缺陷的种类从照明光源发射的光束。 通过用安装在不同仰角方向上的多个图像传感器捕获由细长形状光束照射的样本的多个光学图像，通过根据在照射细长的照射区域中在样品上形成的图案的密度来改变放大倍率 形状光通量。 通过处理由多个图像传感器捕获的图像来检测样本上的缺陷。

    Semiconductor device inspection method
    10.
    发明授权
    Semiconductor device inspection method 有权
    半导体器件检查方法

    公开(公告)号：US07332359B2

    公开(公告)日：2008-02-19

    申请号：US10082593

    申请日：2002-02-22

    申请人： Akira Hamamatsu ,  Minori Noguchi ,  Yoshimasa Ohshima ,  Hidetoshi Nishiyama

    发明人： Akira Hamamatsu ,  Minori Noguchi ,  Yoshimasa Ohshima ,  Hidetoshi Nishiyama

    IPC分类号： H01L31/26

    CPC分类号： H01L21/67271 ,  G01N21/9501 ,  G01N21/95607 ,  G01N2021/95615

    摘要： Techniques for inspecting semiconductor devices. An inspection condition using chip matrix data and chip size data is set. The intricate circuit patterns of at least one semiconductor device is inspected with the inspection condition. In an embodiment of the present invention, inspection uses images formed by the irradiation of white light, a laser light, or an electron beam. Data obtained from the inspection is used to generate a revised inspection condition. Semiconductor devices are inspected using the revised inspection condition.

    摘要翻译： 检查半导体器件的技术。 设置使用芯片矩阵数据和芯片尺寸数据的检查条件。 在检查条件下检查至少一个半导体器件的复杂电路图案。 在本发明的实施例中，检查使用通过照射白光，激光或电子束形成的图像。 使用从检查获得的数据来生成修订的检查条件。 使用修订的检查条件检查半导体器件。